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A belt clearance width modulating gallium indium oxide film and its making method

A technology of oxide thin film and gallium indium, which is applied in the field of gallium indium oxide thin film materials and its preparation, can solve the problems of inability to modulate, excessive bandgap width, difficulties, etc., achieve good uniformity and repeatability, and facilitate the industry Chemical, good adhesion performance

Inactive Publication Date: 2008-09-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Benefits of technology

This patented technology describes an improved way to make thin layers made from materials called alpha -aluminum nitride (α-A1ON). These techniques allow for better precision control over processes, resulting in more consistently high quality products. Additionally, these methods are easier to implement due to their ability to produce highly crystalline or even single phase ceramics at room temperature without relying heavily upon expensive equipment such as vacuum systems. Overall, this new technique allows for efficient production of advanced electronic components like transistor circuits.

Problems solved by technology

This patents discuss various technical problem addressed during this patented process called lithography technology that uses specific types of metal compounds like tin dioxide and zinc oxide to create opaque layers made from these metals. Current solutions involve either reducing the size of crystal structures needed or modifying existing processes. However, there still exist challenges related to achieving optimal control over both bandwidth sizes and dopant energism profiles due to factors including impurities and defect states associated with the use of certain alloys.

Method used

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  • A belt clearance width modulating gallium indium oxide film and its making method
  • A belt clearance width modulating gallium indium oxide film and its making method
  • A belt clearance width modulating gallium indium oxide film and its making method

Examples

Experimental program
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Embodiment 1

[0049] Embodiment 1: MOCVD technology prepares Ga 0.2 In 1.8 o 3 Gallium Indium Oxide Thin Film Material

[0050] (1) First pump the reaction chamber of the MOCVD equipment to a high vacuum state of 5×10 -4 Pa, heat the substrate to 550°C;

[0051] (2) Open the valve of the nitrogen cylinder and feed nitrogen into the reaction chamber (background N 2 )300sccm, 30 minutes, make reaction chamber pressure be 50Torr;

[0052] (3) Open the valve of the oxygen cylinder, adjust the flow rate of oxygen to 50 sccm, and keep it for 10 minutes;

[0053] (4) Open the valve of the indium source bottle, adjust the flow rate of the carrier gas (nitrogen) to 20 sccm, and keep it for 10 minutes;

[0054] (5) Open the valve of the gallium source bottle, adjust the flow of carrier gas (nitrogen) to 1 sccm, and keep it for 10 minutes;

[0055] (6) Pass oxygen and organometallic sources (gallium source and indium source) into the reaction chamber at the same time, and keep the film growth t...

Embodiment 2

[0059] Embodiment 2: MOCVD technology prepares Ga 0.4 In 1.6 o 3 Gallium Indium Oxide Thin Film Material

[0060] The gallium indium oxide thin film material was prepared by MOCVD technology. The preparation method and process conditions were the same as in Example 1, except that the organometallic gallium source temperature was -14°C, the organometallic indium source was 28°C, the growth temperature (substrate temperature) was 550°C, and the organometallic gallium source temperature was -14°C. The gallium source carrier gas flow rate is 2.6 sccm, the organic metal indium source carrier gas flow rate is 25 sccm, the growth time is 300 minutes, and the film thickness is 502 nm. The film is cubic In 2 o 3 Single crystal structure, the bandgap width of the film is 3.83eV, and the average relative transmittance in the visible light range exceeds 85%.

Embodiment 3

[0061] Embodiment 3: MOCVD technology prepares Ga 0.4 In 1.6 o 3 Gallium Indium Oxide Thin Film Material

[0062] The preparation method and process conditions are the same as those in Example 2, except that the growth temperature is 700° C., the growth time is 300 minutes, and the film thickness is 410 nm. The prepared film is cubic In 2 o 3 Single crystal structure, the bandgap width of the film is 3.78eV, and the average relative transmittance in the visible light range exceeds 83%.

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Abstract

The invention relates to a Ga-In oxide film that can modulate the width of a band gap and a preparation method thereof. The Ga-In oxide film has a general formula of Ga2 (1-X) In2XO3 and x is equal to 0.1-0.9 in the general formula; as the content of In x is reduced from 0.9 to 0.1, the width of the band gap of film material is increased from 3.72 to 4.58eV. Organic metal chemical vapor deposition technique is adopted and trimethyl gallium (Ga (CH3)3) and trimethyl indium (In (CH3)3) are taken as the source of organic metals; nitrogen is taken as carrier gas; oxygen is taken as oxidizing gas; equipment for organic metal chemical vapor deposition is used and the Ga-In oxide film is produced on a substrate under vacuum condition at 500-800 DEG C. The Ga-In oxide film material of the invention is suitable for manufacturing ultra violet and transparent semiconductor devices due to the band gap with width larger than GaN, In2O3 and ZnO.

Description

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Claims

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Application Information

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Owner SHANDONG UNIV
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