Method for manufacturing gallium nitride compound semiconductor, and semiconductor light emitting element

Abstract

The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700 DEG C. to 775 DEG C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4. 5 nm / min to 10 nm / min.

Description

technical field [0001] The present invention relates to a method for producing a gallium nitride-based compound semiconductor, and a semiconductor light-emitting device produced by the method. Background technique [0002] Nitride semiconductors containing nitrogen (N), which is a Group V element, are promising as materials for short-wavelength light-emitting devices due to the size of their band gaps. Among them, research on gallium nitride-based compound semiconductors (GaN-based semiconductors) is flourishing, and semiconductor lasers made of blue light-emitting diodes (LEDs), green LEDs, and GaN-based semiconductors have also been put into practical use. [0003] Gallium nitride-based semiconductors have a wurtzite crystal structure. figure 1 A unit cell of GaN is schematically represented. in Al a Ga b In C In N (0≤a, b, c≤1, a+b+c=1) semiconductor crystals, figure 1 A part of Ga shown can be replaced with Al and / or In. [0004] figure 2 Indicates the four basi...

AI Technical Summary

Problems solved by technology

In this way, if the growth temperature is lowered to a temperature close to 700°C, the obtained m-plane InGaN layer will have more crystal defects and holes, and the crystallinity of the m-plane InGaN layer will be significantly reduced.

In addition, the reduction of the growth temperature also becomes the NH in the reaction chamber 3 The reason for the reduction of the decomposition efficiency

Therefore, m-plane growth at an extremely low temperature of less than 700°C is also unrealistic in terms of the characteristics of light-emitting devices.

Images