80 results about "Indium(III) oxide" patented technology

A method for forming a high-K material layer in a semiconductor device fabrication process including providing a silicon semiconductor substrate or thermally growing interfacial oxide layer comprising silicon dioxide over the silicon substrate; treating with an aqueous base solution or nitridation and depositing a high-K material layer.

The invention provides a porous indium oxide nanometer material and a preparation method thereof. The preparation method for the porous indium oxide nanometer material, provided by the invention, comprises the following steps: mixing indium salt, organic ligand, water and organic solvent, thereby acquiring a reaction solution; performing hydrothermal reaction, thereby acquiring a porous indium oxide nanometer material precursor; lastly, burning, thereby acquiring the porous indium oxide nanometer material. According to the invention, indium salt, organic ligand, water and organic solvent are taken as raw materials, the precursor with an organic skeleton structure is acquired through hydrothermal reaction, and then the precursor is burned so as to acquire the porous indium oxide nanometer material; the preparation method is simple, no template agent is required and the yield is high; an experimental result proves that the yield of the porous indium oxide nanometer material prepared according to the preparation method provided by the invention is 30.2-35.8%.

A method for producing composite powders based on silver-tin oxide, by chemically reductive precipitation of silver onto particulate tin oxide. A solution of a silver compound and a solution of a reducing agent are simultaneously added in stoichiometrically equivalent amounts, separately and continuously with intensive mixing, to an aqueous suspension of tin oxide. The resulting composite powders have very high homogeneity, and can be processed to make electrical contact materials. The method is particularly suitable for producing composite powders based on silver-tin oxide doped with indium oxide, to be used in the manufacture of electrical contact materials.

A resin composition includes a binder component having at least one of a monomer and an oligomer of one or more of a fluorine system and a silicone system having a polymerizable functional group in a molecule. The resin composition also includes fine metal oxide particles, and a polymerization initiator. The fine metal oxide particles include particles selected from the group of zinc oxide, indium oxide, tin oxide, antimony oxide, tin-doped indium oxide (ITO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), and fluorine-doped tin oxide (FTO).

Disclosed is a vanadium / titania-based catalyst for removing nitrogen oxides, and a process for removing nitrogen oxides in a flue gas using the same. The vanadium / titania-based catalyst containing a vanadium trioxide and / or vanadium tetraoxide has excellent activity to remove nitrogen oxides in a wide temperature range, particularly, at the low temperature window.

The invention belongs to the technical field of manufacturing of semiconductor thin film transistors and relates to a method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors. The method includes the steps that zirconium acetylacetonate is dissolved in dimethylformamide, and ethanol amine of the same molar weight as the zirconium acetylacetonate is added as a stabilizer, so that a precursor solution is formed; a sample is obtained by coating a cleaned low-resistance silicon substrate with the precursor solution in a spinning mode, and a sample obtained after light annealing is obtained by placing the sample below a high-pressure mercury lamp for ultraviolet light treatment; a thin film sample is obtained through annealing of the sample obtained after light annealing; an In2O3 channel layer is obtained by coating the surface of the obtained thin film sample with an In2O3 aqueous solution; finally, a source electrode and a drain electrode are manufactured on the In2O3 channel layer, and then the thin film transistors can be obtained. According to the overall implementation scheme, cost is low, processes are simple, the principle is reliable, product performance is good, the manufacturing process is environmentally friendly, application prospects are wide, and a feasible plan is provided for manufacturing the high-performance thin film transistors on a large scale.

The invention provides a preparation method of indium oxide with new appearance, belonging to the technical field of synthesis and nano material of the indium oxide. The preparation method comprises the following steps: taking inorganic salt solution of the indium as an indium source, adopting N, N-dimethyl formamide (DMF) as an alkali source and anion active agents such as sodium dodecyl sulfate(SDS) and the like as an additive, using hydrothermal synthesis to prepare the novel hollow-microspherical and flower-shaped indium oxide with the secondary structure under the condition without adding any hard template, and controlling the appearance of the secondary structure by chemical means. In the preparation method provided by the invention, the technical process is simple, the promotion is easy, the selected reagent is low in price and environment-friendly, and the need on low-cost, large-scale and green production is met.

The invention relates to an indium-doped zinc oxide target material and a preparation method of a transparent conducting film. Indium-doped zinc oxide powder is prepared by the liquid phase method or the solid phase method; the high-purity indium-doped zinc oxide ceramic target material is obtained by performing isostatic pressing, vacuum sintering and atmosphere annealing on the indium-doped zinc oxide powder; and the transparent conducting film is prepared from the target material through the sputtering method. The mass content of indium oxide is 0.5 to 10 percent; the purity of the target material is not less than 99.9 percent; and the relative density of the target material is not less than 95 percent and can be up to 99.5 percent. The transparent conducting film prepared from the target material through the sputtering method has high photoelectric property; the resistivity can be 7*10<-4> Omega cm at most; and in a visible light range (400 to 800nm), the highest transmissivity can be up to 92 percent and the average transmissivity is not less than 84 percent. Therefore, the transparent conducting film can be applied to fields of solar cells, light-emitting diodes, panels, liquid crystal displays and the like.

The invention provides a zinc oxide / indium oxide nanometer hetero junction photocatalysis material and a method for preparing the same. The chemical formula of the photocatalysis material is ZnO / In2O3, and the mol ratio of the zinc oxide to the indium oxide is 1:5-5:1. The preparation method comprises that: (1) according to the mol ratio of 1:5-5:1, the zinc oxide and the indium oxide are mixed and completely dissolved in deinoized water to form a clear solution, ammonia water is added in the clear solution to adjust the pH value of the solution to 9, the solution is aged for 24 hours, and the zinc oxide and the indium oxide are completely deposited; and (2) the zinc oxide and the indium oxide are washed and filtered by deionized water and deposited for three times, and the deposition is dried out at a temperature of 95 DEG C and annealed at a temperature of between 600 and 1,000 DEG C. Because a coprecipitation method is utilized to combine the zinc oxide and the indium oxide to form the nanometer hetero junction material, the method has the advantages of simple process, low cost and easy mass production; the zinc oxide / indium oxide nanometer hetero junction photocatalysis material prepared by the method has larger specific surface areas and can obviously improve the separation of photogenerated carriers and enhance the photocatalysis performance of the material.

The invention provides a method for preparing an rGO-In2O3 nanoparticle composite. The method particularly comprises the following steps: performing a hydrothermal reaction on indium(III) chloride tetrahydrate and lauryl amine which are taken as raw materials and performing calcination treatment to obtain indium oxide nanoparticles; then processing the surface of indium oxide by use of aminopropyl triethoxysilane (APTES) to ensure that the surface of indium oxide carries positive charges; and dispersing indium oxide carrying the positive charges and graphene oxide in deionized water to ensure mutual combination, and finally, performing reduction on graphene oxide by a hydrothermal method to obtain the rGO-In2O3 nanoparticle composite at last. The method is simple in production process, and the obtained rGO-In2O3 nanoparticle composite adopts a p-n heterogeneous structure and combines the advantages of large specific area of rGO and an In2O3 semi-conductor material. The method is suitable for an rGO and metal semi-conductor oxide combining process, so that the material with favorable performance is obtained.

The invention relates to a preparing method of a nano-rod-shaped indium oxide (In2O3) gas-sensitive material, and belongs to the technical field of preparation of inorganic nanometer functional materials. The preparing method comprises the steps of with indium(III) chloride tetrahydrate being an indium source, by adopting hexadecyl trimethyl ammonium bromide as surface active agent, conducting a hydrothermal reaction under the alkaline condition of sodium hydroxide to prepare indium hydroxide and finally, conducting thermal roasting to obtain the indium oxide gas-sensitive material of a nano-rod-shaped structure. Finally prepared indium oxide is In2O3 with the cubic phase and of the nano-rod-shaped structure, has very good performance of sensing and detecting both nitrogen dioxide gas andhydrogen sulfide gas and is insensitive to other gases (carbon monoxide, ethyl alcohol, ammonia, hydrogen, formaldehyde and the like); the indium oxide also has low working temperature, a quick response and restoration, very high sensitivity, a low detection limit, high selectivity and high stability. Besides, the indium oxide gas-sensitive material can also be used in the fields of catalyst, battery materials, photoelectric materials and the like.

To provide a method for producing a method for producing a low-resistance and high-transmittance indium-oxide-based transparent conductive film readily obtained through crystallization, the method employing an amorphous film which can easily be patterned through etching with a weak acid.The method of the invention includes a step of confirming that a sputtering target which is provided and which contains indium oxide and an additive element can deposit an amorphous film at a predetermined film deposition temperature, and that the deposited amorphous film can be crystallized through annealing at a predetermined annealing temperature; a step of determining, as a film deposition oxygen partial pressure, an oxygen partial pressure at which a crystallized film obtained through annealing at the predetermined annealing temperature has the lowest resistivity, which oxygen partial pressure differs from an optimum oxygen partial pressure at which the amorphous film deposited at the predetermined film deposition temperature has the lowest resistivity; a step of depositing an amorphous film through sputtering the sputtering target at the film deposition oxygen partial pressure; and a step of crystallizing the amorphous film through annealing at the predetermined annealing temperature, to thereby form an indium-oxide-based transparent conductive film.

An etchant for selective etching is used to simplify the production process of a semi-transparent semi-reflective electrode substrate, and temporal loss is not produced by avoiding troublesome repeated works, thereby efficiently providing a semi-transparent semi-reflective electrode substrate. A method for manufacturing a semi-transparent semi-reflective electrode substrate where a metal oxide layer (12) made of at least indium oxide and an inorganic compound layer (14) at least made of Al or Ag are formed in order of mention. The method comprises a step of etching the inorganic compound layer (14) with an etchant lambda composed of phosphoric acid, nitric acid, and acetic acid and a step of etching the metal oxide layer (12) with an etchant sigma containing oxalic acid.

The invention discloses an indium oxide-coated secondary aqueous neutral zinc ion battery positive electrode material and preparation method and application thereof. The indium oxide-coated secondaryaqueous neutral zinc ion battery positive electrode material comprises a zinc ion battery positive electrode material and an indium oxide-coated material, wherein the indium oxide-coated material is coated on a surface of the zinc ion battery positive electrode material and comprises an indium salt and polyvinylpyrrolidone. The indium oxide is coated on the surface of the zinc ion battery positiveelectrode material, a compact and uniform coating layer is formed on a surface of an active material, the contact between the positive electrode and an electrolyte is reduced, the reaction of the electrolyte and the electrode active material is suppressed, and the interface resistance of the electrolyte and the electrode material is reduced; the indium oxide-coated secondary aqueous neutral zincion battery positive electrode material has favorable electronic conductivity and is good in cycle stability and high in rate performance; and the preparation method is simple and is applicable to a zinc ion battery positive electrode and a zinc ion battery.

The invention discloses an In2O3@ZnIn2S4 nanosheet material and a preparation method and application thereof. The method comprises the following steps: dissolving indium oxide in acidic water to obtain an indium oxide solution; and then adding zinc chloride, indium trichloride and thioacetamide into the indium oxide solution for a reaction; and carrying out washing and drying to obtain the In2O3@ZnIn2S4 nanosheet material, wherein a molar mass ratio of indium oxide to zinc chloride to indium trichloride to thioacetamide is 1: 2: 2: 5. The preparation method for the In2O3@ZnIn2S4 nanosheet material in the invention is simple and convenient in operation and low in cost; the prepared photocatalyst material, i.e., the In2O3@ZnIn2S4 nanosheet material, has extremely high targeting properties and degradation efficiency, and the degradation rate of 2,4-dichlorophenol in surface water can reach 93.2%; and the photocatalyst material can be recycled and still has high degradation rate after being used multiple times, so the treatment cost of 2,4-dichlorophenol is greatly reduced. Treatment with the photocatalyst material is efficient and energy-saving, and can meet national detection requirements on 2,4-dichlorophenol in surface water in China.

The invention relates to an appearance-controllable indium oxide powder and a low-temperature hydrothermal synthesis method thereof and belongs to the technical field of inorganic chemical synthesis. The low-temperature hydrothermal synthesis method comprises the following steps: taking indium nitrate or indium chloride as an indium source, urea as an alkaline source, nitric acid or hydrochloric acid as a hydrolysis inhibitor and polyacrylic acid (PAA) and sodium dodecyl sulfonate (SDS) as a double template agent, and reacting for 8-12 hours under a hydrothermal condition at 80-95 DEG C; performing suction filtration and washing a product, and roasting to obtain In2O3 power. Cubic, flower-shaped, spherical and hollow spherical products formed by primary particles as In2O3 single crystals can be obtained by regulation and control of PAA and SDS consumption; the obtained In2O3 power belongs to a cubic crystal system. The obtained products are made into a side heat type gas sensor element for gas sensitive performance detection; when the working temperature of a device made of the cubic In2O3 power is 100 DEG C, the gas-sensitive property of 100-ppm nitromethane is good, a sensitivity value is higher than 500, the response time is about 1-2 s, and the quick detection on flammable and explosive nitromethane gas at a relatively low temperature can be realized.

The invention discloses a preparation method of an alkynol selective hydrogenation catalyst. The preparation method comprises the following steps: (1), agitating and mixing a nitrogen-containing biomass with a surfactant, next adding an indium-containing metallic salt and acid liquor, mixing uniformly, and then performing drying and high-temperature calcination to obtain an indium oxide compoundednitrogen-doped porous carbon material; and (2), impregnating the indium oxide compounded nitrogen-doped porous carbon material in a Pd precursor solution, and then performing agitation, oven-drying,calcination and hydrogen reduction treatment in sequence to obtain the alkynol selective hydrogenation catalyst. The invention also discloses the alkynol selective hydrogenation catalyst prepared by the preparation method and application of the alkynol selective hydrogenation catalyst to an alkynol selective hydrogenation reaction in a vitamin industrial chain. The preparation method is simple; the prepared alkynol selective hydrogenation catalyst is compact in structure; nano particles of a Pd-In alloy are highly dispersed; and the alkynol selective hydrogenation catalyst has excellent catalytic performance.

The invention provides a nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and a preparation method thereof and belongs to the technical field of semiconductor oxide gas sensors. The nitrogen dioxide sensor is composed of a Al2O3 insulating ceramic tube 2, a Ni-Cr alloy heating coil 1 and sensitive material films 4, wherein the outer surface of the Al2O3 insulating ceramic tube 2 is provided with two discrete annular gold electrodes 3, the Ni-Cr alloy heating coil 1 penetrates through the Al2O3 insulating ceramic tube 2, and the outer surface of the Al2O3 insulating ceramic tube 2 and the annular gold electrodes 3 are coated with the sensitive material films 4. Each annular gold electrode 3 is connected with a pair of platinum wires 5. The sensitive material films 4 are obtained by being coated by orderly-channel Ni-doped mesoporous indium oxide. An orderly-channel Ni-doped mesoporous indium oxide material can provide a large specific surface area, and more active sites are provided easily. More oxygen vacancy defects are introduced to Ni-doped indium oxide, sensitivity is improved easily, and the nitrogen dioxide sensor has wide application prospects in the aspect of detection of the nitrogen dioxide content in the microenvironment.

The invention discloses a preparation method for an ITO (indium tin oxide) evaporation target. The method comprises the following steps: (1) performing heat treatment on raw materials micrometer indium oxide powder and nanometer tin oxide powder; (2) uniformly mixing the heat-treated raw materials micrometer indium oxide powder and nanometer tin oxide powder, and then adding an additive for wet ball milling; (3) performing constant temperature and constant humidity drying on grease-doped ITO powder treated in step (2); (4) placing dried granulated ITO powder in a metal die for prepressing forming, and performing cold isostatic pressing to obtain a green body; (5) greasing the green body to obtain a preform; (6) sintering the preform to obtain an ITO target material. According to the method, a preparation process is improved to realize structure strengthening of an ITO evaporation material and solve the problem of cracking in case of electron beam bombardment.

The invention discloses a silver ion doped zinc thioindate heterojunction photocatalyst preparation method, and relates to a catalyst preparation method, which comprises: carrying out a reaction on silver nitrate, zinc acetate, indium acetate, thioacetamide and indium oxide according to a certain ratio under an oil bath heating condition to obtain a target photocatalyst. According to the invention, the novel visible light photocatalyst is clear in structure and definite in composition; by doping with Ag<+>, the photon utilization rate of ZnIn2S4 can be remarkably increased; by compounding withIn2O3, the diffusion range of photon-generated carriers can be enlarged, the electron-hole pair is effectively separated, the recombination of photo-induced electron-hole pairs is inhibited, and theutilization rate of photo-induced electrons is greatly increased, so that the catalytic activity of visible light is enhanced; and the Ag:ZnIn2S4 / In2O3 composite material has high visible light activity, good hydrogen production capacity and good photocatalytic stability, so that the Ag:ZnIn2S4 / In2O3 composite material has wide prospect in the field of clean energy production and energy conversion, and is a catalyst with good development prospect.

The invention discloses a preparation method of indium oxide nano-powder. The preparation method comprises the following steps: (1) mixing metal indium with organic acid, and performing heating and dissolution in a protective gas to obtain an organic indium compound: (2) adding hydrogen peroxide and water in the organic indium compound, performing mixing, then placing the mixture into a supercritical hydrothermal reactor for reaction, and filtering after finish of reaction to obtain a reaction product; and (3) placing the reaction product obtained in the step (2) to be calclined in air to obtain the indium oxide nano-powder. The supercritical mode is adopted, so that the organic indium compound is finally converted into an In2O3 precipitate, CO2 and H2O; as a precipitator does not need to be additionally added, discharge of pollutants is avoided; and the preparation method is an environment-friendly preparation method, is simple in process, does not need complicated preparation processes, and can realize large-scale controllable production.

The invention provides a preparation method of porous indium oxide / indium sulfide heterogeneous junction material, belonging to the field of porous inorganic materials. The preparation method includesthe following steps: mixing polyvinylpyrrolidone, indium nitrate and water to form a precursor solution; freezing and deicing the precursor solution successively to obtain porous polyvinylpyrrolidone / indium nitrate hybrid material; calcining the porous polyvinylpyrrolidone / indium nitrate hybrid material to obtain porous indium oxide; and mixing porous indium oxide with L-cysteine and water and carrying out hydrothermal reaction, thereby obtaining the porous indium oxide / indium sulfide heterogeneous junction material. The preparation method provided by the invention is simple and easy to operate, and the product prepared by the method has better photocatalytic activity.