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Zinc oxide/indium oxide nano heterojunction photocatalysis material and preparation method thereof

A photocatalytic material, indium oxide technology, applied in metal/metal oxide/metal hydroxide catalysts, catalyst activation/preparation, chemical instruments and methods, etc., can solve the preparation method with small specific surface area and difficulty in carrier separation , low photocatalytic efficiency and other problems, to achieve the effect of improving photocatalytic performance, simple method and large specific surface area

Inactive Publication Date: 2009-07-22
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the complex preparation method of zinc oxide / indium oxide heterojunction materials and the small specific surface area of ​​the prepared zinc oxide and indium oxide heterojunction materials, which is not suitable for photocatalysis and the carrier separation of photocatalysis materials is relatively difficult. , lower overall photocatalytic efficiency, etc., provide a zinc oxide / indium oxide nano-heterojunction photocatalytic material suitable for photocatalysis with a large specific surface area, and provide a preparation method of the material at the same time, the method is simple and low cost Low cost, easy for large-scale production, can significantly improve the separation of photogenerated carriers, and improve the photocatalytic performance of materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Mix the two raw materials of zinc nitrate and indium nitrate with a molar ratio of 1:5, and fully dissolve them in deionized water to form a transparent solution. Add ammonia water dropwise to the transparent solution, adjust the pH value to 9, and age for 24 hours to fully precipitate the raw materials.

[0015] (2) Filter and wash with deionized water, and after precipitation three times, evaporate the precipitate to dryness at 95°C. Anneal at 800°C for 2 hours. The zinc oxide / indium oxide nanometer heterojunction photocatalytic material is obtained.

Embodiment 2

[0017] (1) Mix the two raw materials of zinc nitrate and indium nitrate with a molar ratio of 1:2, and fully dissolve them in deionized water to form a transparent solution. Add ammonia water dropwise to the transparent solution, adjust the pH value to 9, and age for 24 hours to fully precipitate the raw materials.

[0018] (2) Filter and wash with deionized water, and after precipitation three times, evaporate the precipitate to dryness at 95°C. Anneal at 800°C for 2 hours. The zinc oxide / indium oxide nanometer heterojunction photocatalytic material is obtained.

Embodiment 3

[0020] (1) Mix the two raw materials of zinc nitrate and indium nitrate with a molar ratio of 1:1, and fully dissolve them in deionized water to form a transparent solution. Add ammonia water dropwise to the transparent solution, adjust the pH value to 9, and age for 24 hours to fully precipitate the raw materials.

[0021] (2) Filter and wash with deionized water, and after precipitation three times, evaporate the precipitate to dryness at 95°C. Anneal at 800°C for 2 hours. The zinc oxide / indium oxide nanometer heterojunction photocatalytic material is obtained.

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Abstract

The invention provides a zinc oxide / indium oxide nanometer hetero junction photocatalysis material and a method for preparing the same. The chemical formula of the photocatalysis material is ZnO / In2O3, and the mol ratio of the zinc oxide to the indium oxide is 1:5-5:1. The preparation method comprises that: (1) according to the mol ratio of 1:5-5:1, the zinc oxide and the indium oxide are mixed and completely dissolved in deinoized water to form a clear solution, ammonia water is added in the clear solution to adjust the pH value of the solution to 9, the solution is aged for 24 hours, and the zinc oxide and the indium oxide are completely deposited; and (2) the zinc oxide and the indium oxide are washed and filtered by deionized water and deposited for three times, and the deposition is dried out at a temperature of 95 DEG C and annealed at a temperature of between 600 and 1,000 DEG C. Because a coprecipitation method is utilized to combine the zinc oxide and the indium oxide to form the nanometer hetero junction material, the method has the advantages of simple process, low cost and easy mass production; the zinc oxide / indium oxide nanometer hetero junction photocatalysis material prepared by the method has larger specific surface areas and can obviously improve the separation of photogenerated carriers and enhance the photocatalysis performance of the material.

Description

technical field [0001] The invention relates to a zinc oxide / indium oxide heterojunction photocatalytic material and a preparation method of the material, belonging to the technical field of photocatalytic material preparation. Background technique [0002] With the development of human society, environmental pollution and energy problems are becoming more and more serious. Since Fujishima and Honda discovered TiO in 1972 2 Since the (titanium dioxide) electrode produces hydrogen and oxygen under light, the research on photocatalytic materials has attracted more and more attention, and it is considered to be the most ideal solution to solve the current environmental and energy problems. In the past ten years, scientists all over the world have made great progress in the research of photocatalytic materials, but the current research on photocatalytic materials still has the problems of low overall photocatalytic efficiency and difficult separation of carriers. The heterojun...

Claims

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Application Information

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IPC IPC(8): B01J23/08B01J37/03
Inventor 张晓阳王泽岩黄柏标秦晓燕
Owner SHANDONG UNIV
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