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Indium-doped zinc oxide target material and preparation method of transparent conducting film

A transparent conductive film, zinc oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effect of low cost, cost reduction, good radio and television performance

Inactive Publication Date: 2011-09-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Judging from the currently published patents, there is no ZnO-based transparent conductive film target prepared by vacuum sintering.

Method used

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  • Indium-doped zinc oxide target material and preparation method of transparent conducting film
  • Indium-doped zinc oxide target material and preparation method of transparent conducting film
  • Indium-doped zinc oxide target material and preparation method of transparent conducting film

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Example 1: Preparation of indium-doped zinc oxide target

[0023] Firstly, zinc and indium oxide powders were prepared by solid state ball milling method. Follow In 2 o 3 / (ZnO+In 2 o 3 ) mass ratio is 5% and takes by weighing zinc oxide (purity is 99.99%) powder and indium oxide (purity is 99.99%) powder, takes by weighing the polyethylene glycol that accounts for powder gross mass 1%, takes by weighing three times Grinding balls with powder quality; put the weighed powder, polyethylene glycol and grinding balls into the ball milling jar, then add a certain amount of absolute ethanol, seal and fix the ball milling jar on the ball mill, and then rotate the milling jar at 200 rpm / min speed ball milling for 20 hours. After ball milling, pour out the slurry, dry at 80°C for 5 hours, then pre-sinter the powder at 700°C and high-purity oxygen for 5 hours, and then sieve and granulate the powder to obtain Zinc and indium oxide powders that can be used for target sinte...

Embodiment 2

[0025] Example 2: Preparation of indium-doped zinc oxide transparent conductive film

[0026] The indium-doped zinc oxide target prepared in Example 1 was used to prepare a transparent conductive film by magnetron sputtering. Install the target on the corresponding position of the magnetron target gun, and evacuate until the background vacuum degree of the vacuum chamber is higher than 2.0×10 -4 Pa, with quartz glass as the substrate, the substrate temperature is kept at 400°C, 100sccm argon gas (sccm means standard milliliter per minute) is introduced into the vacuum chamber, the pressure of the vacuum chamber is adjusted to 0.15Pa, and the power of the radio frequency power supply is adjusted to 100W. The target was pre-sputtered for 10 min before the formal deposition of the film. An indium-doped zinc oxide transparent conductive film with a thickness of about 300 nm was prepared according to the above process conditions. The test shows that the crystal structure of the t...

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Abstract

The invention relates to an indium-doped zinc oxide target material and a preparation method of a transparent conducting film. Indium-doped zinc oxide powder is prepared by the liquid phase method or the solid phase method; the high-purity indium-doped zinc oxide ceramic target material is obtained by performing isostatic pressing, vacuum sintering and atmosphere annealing on the indium-doped zinc oxide powder; and the transparent conducting film is prepared from the target material through the sputtering method. The mass content of indium oxide is 0.5 to 10 percent; the purity of the target material is not less than 99.9 percent; and the relative density of the target material is not less than 95 percent and can be up to 99.5 percent. The transparent conducting film prepared from the target material through the sputtering method has high photoelectric property; the resistivity can be 7*10<-4> Omega cm at most; and in a visible light range (400 to 800nm), the highest transmissivity can be up to 92 percent and the average transmissivity is not less than 84 percent. Therefore, the transparent conducting film can be applied to fields of solar cells, light-emitting diodes, panels, liquid crystal displays and the like.

Description

technical field [0001] The invention relates to an indium-doped zinc oxide sputtering target material and a method for preparing a transparent conductive film thereof, belonging to the technical field of optoelectronic functional materials. Background technique [0002] Transparent conductive oxide (TCO) is an important optoelectronic functional material, which has high transmittance to visible light, high reflectivity to infrared light, and excellent electrical conductivity. Therefore, TCO is widely used in solar cells, flat panel and liquid crystal displays, light-emitting diodes, and thermal radiation mirrors. Tin-doped indium oxide (Indium Tin Oxide, ITO for short) is currently the most widely used transparent conductive film, and the mass content of indium oxide in the film reaches 90%. As we all know, metal indium is scarce in the earth's crust, which is a scarce resource and expensive; and ITO is unstable in hydrogen plasma. Therefore, it is necessary to develop a n...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08
Inventor 曹永革黄常刚邓种华王美丽
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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