179 results about "Double reflection" patented technology

The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED.

A reflector antenna arrangement can transmit and receive both infrared (IR) and millimeter wave (RF) radiation. The arrangement includes a main reflector (1), a subreflector (2), an IR feed system (4), an RF feed system (3), a radome (5), and a bispectral window (6) arranged in an opening provided in a central area of the main reflector (1). The RF feed system is oriented so that the RF radiation path includes a double reflection from the subreflector and from the main reflector, while the IR feed system is arranged directly behind the bispectral window so that the IR beam path extends directly through the bispectral window without reflecting from the main reflector or the subreflector. The bispectral window has a high reflectance for the RF radiation and a high transmittance of the IR radiation. The bispectral window is made of a dielectric material and has rotationally symmetrical front and back surfaces, whereby the front surface contour is optimally matched to the front surface of the main reflector and the back surface contour achieves an optimal reflectivity of the RF radiation and an optimal transmissivity of the IR radiation. Undesired influences between the IR radiation and the RF radiation are avoided by the separation of the signal beam paths.

A surface light source device and liquid crystal display are capable of direction-conversion effectively through a double reflections. A back face of a light guide plate 10 is provided with micro-reflectors projecting from a general plane of the back face. A main input light H1 to a micro-reflector 20 is incident to an incidence end face 12 (at point a) and inputted in a somewhat downward inclined direction. An inner input light is inner-reflected mainly by a gently inclined slope 21 (point b) and then impinges on a slope 22 to be reflected again (point c), becoming an inner output light IO. The inner output light IO is emitted from an emission face 13 (point d), being supplied to an LCD panel or the like after transmitting through a light diffusion sheet DF (points e and f). A reflection member RF having an irregular reflectivity, if disposed, recovers light leaking through the slope 22 to use the light efficiently again, thereby providing a reduced fine-unevenness in brightness.square

A quadric reflector can have an approximately conical shape. The shape can tapers from a wide base to an apex. The apex can include an aperture, a mirror, and a set of one or more optical elements. A mirror can be positioned within an overhang enclosure of the device in a plane approximately parallel to a circular cross section of the conical shape. The mirror can reflect environmental light that is reflected by the quadric reflector into the aperture or reflect light emitting from the aperture onto the quadric reflector. The overhang enclosure can have a substantially conical shape which eliminates secondary reflection resulting from the environmental light reaching the aperture twice. Using the overhang enclosure to absorb the secondary reflection eliminates or minimizes banding.

The invention relates to a novel double-reflection type flight time mass spectrum photoelectron velocity imager used for detecting an atom cluster or a molecule cluster. According to the system structure, the imager comprises a laser sputtering ion source, a flight time mass spectrum and a negative ion photoelectron imaging system. The laser sputtering ion source can be used for generating a cluster with a wide mass range. The flight time mass spectrum is used for rapidly detecting cluster ions in real time in an in-situ mode and can effectively observe and study formation and distribution rules of the cluster ions. The negative ion photoelectron velocity imaging system can be used for obtaining information such as vertical desorption energy of negative ions and an electron affinity of a neutral species. Compared with the prior art, the novel double-reflection type flight time mass spectrum photoelectron velocity imager has the advantages that the mass spectrum resolution and the energy spectrum resolution of a desorption area of the negative ion photoelectron velocity imaging system are high, and the imager can be used for detecting kinds of atom clusters or molecule clusters.

A light guide plate, surface light source device and liquid crystal display of a double-reflection-direction-conversion type have a heightened applicability to an front-lighting arrangement. A back face 14 of a light guide plate 10 is provided with micro-reflectors shaped like trapezoids each of which has a bottom face extending generally in parallel with a general plane of the back face 14. A main input light H10 to a micro-reflector 20 is incident to an incidence end face 12 (at point a) and inputted thereto in a somewhat downward inclined direction. An inner input light is inner-reflected mainly by slopes 21 and 22 successively (at points b and c), becoming an inner output light IO directed to an emission face 13. The inner output light IO is emitted from the emission face 13 (at point d), being supplied to an LCD panel or the like after transmitting through a light diffusion sheet DF (points e and f). An application to a front-lighting arrangement prevents the displayed image from being blurred since a returning light coming from an LCD panel is hardly bent by the micro-reflectors.

The invention discloses an electromechanical coupling-based direction adjustment method of a large-scale forming double-reflection surface antenna. The method includes the following steps that: (1) the finite element model of an antenna structure is established; (2) the piecewise fitting surface of the forming main reflection surface of the antenna is determined; (3) finite element node coordinates after the thermal deformation of the main reflection surface, as well as the rotation angle and vertex displacement quantity of an auxiliary reflection surface are calculated; (4) the optimal matching surface of the forming main reflection surface of the antenna after deformation is determined; (5) antenna direction deviation caused by temperature distribution of the main reflection surface of the antenna is calculated; (6) direction deviation of the auxiliary reflection surface caused by the thermal deformation of the antenna is calculated; (7) total direction deviation caused by the structural thermal deformation of the antenna is calculated; (8) the total direction deviation of the antenna under a local coordinate system is converted into direction adjustment quantity of the antenna under a geodetic coordinate system; and (9) the direction of the antenna and the direction of beams after adjustment are calculated. According to the method of the invention, the electric performance of the antenna is improved through adjusting the azimuth pitch angle of an antenna servo system. The analysis and calculation processes of the method are more concise and efficient.

The invention discloses a device and a method for measuring the liquid level height of molten silicon in a single crystal furnace, belonging to the technical field of semiconductor material detection. The device is characterized in that a crucible is arranged in a single crystal pulling furnace body; a conical heat insulation screen is arranged on the crucible in the single crystal pulling furnace body; an observation hole is formed in the top surface of the single crystal pulling furnace body, and through the observation hole, laser can enter the single crystal pulling furnace body and a photoelectric sensor can acquire an image; the optical axis of a lens is set to be perpendicular to the projection of a laser stripe on silicon liquid, the sum d' of the distance between one reference point and the laser stripe and the distance between the other reference point and the laser stripe is calculated, and the distance d between the lower edge of the heat insulation screen and the silicon liquid is calculated according to a geometric relation. According to the device and the method, laser is adopted as reference of measurement, and the laser stripe can be processed to be narrower, so that the measurement precision can be improved; the measurement precision is higher due to adoption of double reflection laser measurement; the laser incidence and the CCD (charge coupled device) imaging are carried out in a same incident hole, the laser is fixed together with a CCD, and the device disclosed by the invention lowers complexity in comparison with a method in which laser enters the single crystal pulling furnace body from a window and is received by the CCD from another window.

The invention relates to a device, a method and a system for detecting energy source gas. The device comprises a main cavity, a gas inlet valve and a gas outlet valve, wherein the inside of the main cavity has a cylindrical shape and is used for storing gas to be detected; the gas inlet valve is positioned on the main cavity and used for filling the gas to be detected into the main cavity; the gas outlet valve is positioned on the main cavity and used for discharging the gas to be detected; the two ends of the main cavity have sealing structures; a double-reflection concave mirror is arranged inside the sealing structure at one end; a quartz window is arranged in the middle of the sealing structure at the other end; and terahertz (Thz) wave which is emerged through the quartz window is received by the double-reflection concave mirror, subjected to double reflection and output through the quartz window. By using the device, the method and the system for detecting the energy source gas in the embodiment of the invention, under the condition of not changing the fixed light path of equipment, the problems of narrow detecting space, short light path, low gas cavity pressure resistance and the like in the mainstream Thz experimental equipment at present are solved, and technical support is provided for the Thz measurement of nonpolar molecular gas in the energy source gas.

The invention discloses an auxiliary face compensation method for a large beam-forming double-reflection-face antenna based on electromechanical coupling. The method includes the steps that firstly, an antenna finite element model is established; secondly, a piecewise fitting face of an antenna beam-forming main reflection face is acquired; thirdly, according to loaded temperature loads, node coordinates of the deformed antenna main reflection face are calculated; fourthly, the electrical property of the deformed antenna is calculated; fifthly, the optical matching face of the deformed antenna main reflection face is acquired; sixthly, a focal point is taken from a focal axis corresponding to the optimal matching face, and the position of the focal point corresponding to the optical matching face serves as an optimal feed source position by calculating the electrical property of the antenna; seventhly, the auxiliary reflection face position adjusting amount for compensating for the electrical property of the antenna is calculated, and the electrical property of the antenna after compensation is calculated; eighthly, whether the increase amount before and after the auxiliary face position is adjusted meets requirements or not is judged, and the auxiliary face position is adjusted till the requirements are met. The reflection face antenna quantitative analysis and modeling processes are simplified, the calculation process is improved, and the weight and the manufacturing cost of the antenna are reduced.

Provided are Circular Polarized Helical Radiation element and its Array Antenna operable in TX band and RX band. The circular polarized helical radiation element and its array antenna and the antenna with double reflection boards using that array can operate at TX / RX dual band which is high frequency such as Ka band by operating the helical antenna in axial mode and implementing dual feeding structure. The array antenna having a number of radiation elements operable in the both of TX band and RX band, wherein the radiation elements are arrayed on predetermined column lines, each radiation element comprising: a helix for radiating orthogonal circular polarized waves in the different frequency bands wherein the helix is fed at its beginning point and its terminating point; and a wave guide for accommodating the helix.

The invention relates to a device and method for measuring flank wear of a ball end milling cutter. With the progress of the machine manufacturing technology, in the milling process, the requirementsfor the machining precision of workpieces are higher increasingly. At the same time, due to the special double helix structure of the ball end milling cutter, it is necessary to study flank wear of the milling cutter so as to improve the surface machining quality. The device for measuring flank wear of the ball end milling cutter comprises two parts of hardware and software, wherein the hardware comprises a machining device (1), a double-reflection device (2) and a tablet computer (3), wherein the machining device comprises a machine frame (4). The machine frame is connected with a main shaft(5), and the main shaft is connected with a milling cutter (6), and the double-reflection device comprises a three-coordinate measuring instrument (7) and a double-reflection plate (8). The three-coordinate measuring instrument is connected with the tablet computer, and three-coordinate measuring software, tool wear measurement software and a windows system are installed on the tablet computer. The device and method are used for accurate measurement of flank wear when the milling cutter conducts milling.

The invention discloses an optical imaging system which comprises a secondary lens, a main lens, a correction lens group and an image field correction lens which are sequentially arranged. Four items of spherical aberration, coma aberration, astigmatism and image field curvature in monochromatic aberration are considered to be eliminated according to a third-order aberration theory. The main lens is a paraboloid; the secondary lens is a hyperboloid, and the conical coefficient of the hyperboloid of the secondary lens is determined according to the refractive index of the material of the secondary lens. Optimized by a computer, the image quality and the view field of the double reflection optical imaging system are obviously improved, and in the sights of a geometric spot diagram (SPOT), a modulation transfer function (MTF) and encircled energy (EE), the image quality of the optical imaging system basically reaches a diffraction limit.

The invention discloses a coaxial S / X dual-frequency sharing feed source network. The coaxial S / X dual-frequency sharing feed source network comprises a coaxial horn feed source, wherein the coaxial horn feed source is composed of an S-frequency-band horn and an X-frequency-band horn, the S-frequency-band horn is externally connected with an S-frequency-band feed network, and the X-frequency-band horn is externally connected with an X-frequency-band feed network, arranged in the S-frequency-band horn in a sleeved mode and coaxial with the S-frequency-band horn. Four transmission arms distributed in the form of a cross and used for achieving S-frequency-band signal wave separating are arranged at the bottom of the S-frequency-band horn, and inner cavities of the four transmission arms are communicated with the inner cavity of the S-frequency-band horn. The coaxial S / X dual-frequency sharing feed source network achieves S-frequency-band single-pulse tracking and circular polarization signal receiving and sending and X-frequency-band single-pulse tracking and circular polarization signal receiving, has the advantages of being wide in working band, small in standing wave, large in power capacity, small in consumption, low in sidelobe, good in directional diagram equalization, small in axial ratio and the like and is suitable for a double-reflection-face multi-frequency multi-tracking-satellite communication and control antenna with the length larger than 7.3 m.

A method for structuring depolarization filter with 45degree incoming wide spectrum includes applying two double-reflection films with different central wavelength to form basic module system by stacking three matching layers then optimizing film layer thickness of basic module system by operating size variation program in module design and analysis software of Tfcalc3.5 in order to obtain final film layer thickness of module system on coated film.

The invention discloses an optical absorption device with adjustable double absorption optical paths. The optical absorption device comprises an absorption cell formed by an adjustable left reflector and an adjustable right reflector, arranged according to a Herriott absorption cell, wherein a light passing hole is formed in the left reflector, and a small semi-penetration semi-reflection coated frustum is arranged in a through hole in the right reflector. A light beam enters the absorption cell, is reflected between the double reflectors for many times, and then is transmitted and reflected by the small semi-penetration semi-reflection frustum after reflected for certain times, transmitted light generates a short absorption light path, reflected light is further reflected back and forth in the absorption cell and goes out of the light passing hole of the left reflector so as to generate a long absorption light path, and the ratio of the double absorption light paths can be conveniently changed by rotating the reflector with the small semi-penetration semi-reflection coated frustum. The absorption cell is compact in structure and convenient to adjust, two different absorption light paths can be obtained by the single optical absorption cell, and thus the optical absorption device has important application value in the fields of multicomponent gas measurement, isotope detection and the like.

This invention provides one light source system, which comprises one light source and one module light improve deice, wherein, the improve device comprises one light bias vibration parts and one bias resonance part; the bias vibration part comprises first and second double reflection surfaces vertical to each other as reflection surfaces; through the first and second reflection surfaces and bias resonance modulation part set converts the random bias lights into light with single bias element to improve light source whole brightness.

The invention relates to optical waveguide switches wherein input light propagating in an input waveguide may be switched between two output waveguides by means of a carrier-induced total internal reflection. The switches utilizes a double-reflection, or, generally, a multiple-reflection electrode to reduce the light deflection angle at each reflection interface, thereby enabling to increase the light switching angle and / or decrease the power consumption of the switch.

The invention discloses a single picosecond pulse signal-to-noise ratio measuring instrument. Based on the correlative measuring scheme of an optical imaging system, the measuring instrument comprises a frequency doubling crystal, a harmonic separation reflection mirror, a fundamental frequency reflection mirror, a frequency doubling reflection mirror, a sum frequency crystal, an optical imaging system, a detector with high dynamic range and a data acquisition processing system. The invention can realize the high dynamic range signal-to-noise ratio measurement of single picosecond pulse, wherein the time measuring range is 150ps, the time resolution is 3ps and the dynamic range is 108. The invention can realize the signal-to-noise ratio measurement in the high dynamic range of -150ps.

The invention provides a double-reflection type flight time mass spectrometric photoelectron velocity imaging instrument. The double-reflection type flight time mass spectrometric photoelectron velocity imaging instrument is provided with a laser sputtering ion source, a cooling ion trap, a flight time mass spectrum and a negative ion photoelectron velocity imaging system; the laser sputtering ionsource is used for generating cluster ions, after entering the cooling ion trap for imprisonment and cooling, and the generated cluster ions are accelerated vertically by an accelerating field and then enter the flight time mass spectrum. The negative ion photoelectron velocity imaging system is used for detecting emitted photoelectrons, and a photoelectron spectroscopy with a neutral cluster electronic structure is obtained. The laser sputtering ion source is used for generating cluster ions, after entering the linear ion trap for imprisonment and cooling, the generated cluster ions are accelerated vertically by an accelerating field and then enter the flight time mass spectrum, and the intensity distribution of the generated cluster ions is obtained through mass spectrometric detection.After the mass spectrum is analyzed, specific cluster negative ions are selected, and through the interaction with desorption laser, neutral molecules and the photoelectrons are generated. The negative ion photoelectron velocity imaging system is used for detecting the emitted photoelectrons, and the photoelectron spectroscopy with the neutral cluster electronic structure is obtained.

The invention relates to the technical field of imaging lenses, and particularly relates to a double-concave double-reflection type omnidirectional imaging lens which can be used for realizing the collection and transformation of imaging light rays inside an omnidirectional annular view filed by adopting a concave reflecting mirror surface and a concave reflecting mirror surface. According to the invention, the materials of a reflecting mirror body have wide select range; high optical efficiency is ensured through a reflecting mirror plated with a reflecting film which has high optical efficiency; the concave reflecting mirror surfaces do not generate chromatic aberration in a vacuum or air medium, so that the difficulty of chromatic aberration correction of a relay lens group is reduced; the double concave reflecting mirror surfaces can be respectively selected in the shape of a spherical surface or a non-spherical surface, so that the difficulty of correction of the optical aberrations, namely spherical aberration, comatic aberration, astigmatism, and the like, of the relay lens group is reduced, and good optical image quality is ensured.

The invention relates to the photovoltaic power generation technology, and aims at providing a compact double reflection-type photovoltaic condenser based on compound eyes. The compact double reflection-type photovoltaic condenser based on the compound eyes comprises a photovoltaic cell and an optical collector, wherein the upper surface of the optical collector comprises a free curved surface and a refraction curved surface, the lower surface of the optical collector comprises a transmission plane and a reflection plane, the center of the refraction curved surface and the center of the reflection plane are positioned at the same vertical position, the center of the free curved surface and the center of the transmission plane are positioned at the same vertical position, and the free curved surface is arranged at a focal position of the refraction curved surface; and the photovoltaic cell is arranged outside the optical collector and adjoins to the transmission plane, the photovoltaic cell is positioned at a focal position of the free curved surface, and the aperture of the transmission plane is larger than that of the photovoltaic cell. The compact double reflection-type photovoltaic condenser has the advantages that the photovoltaic conversion efficiency of the photovoltaic cell is improved, the service life of the photovoltaic cell is prolonged, an optical plastic PMMA (polymethyl methacrylate) is adopted and is prone to injection molding and processing, light in weight and applicable to large-scale processing, and the processing cost is reduced.

The invention discloses a double-reflection panel laser positioning and navigation method based on filtering and is different from geometric triangular positioning of the traditional technology. The reflection light complex number domain information is deeply mined and fully utilized, a technical problem of three reflection panels in traditional meaning is broken through, the operation condition is that data of two reflection panels is simultaneously detected, and application of the laser navigation technology is substantially improved; a calculation error caused by a measurement error is filtered through a filtering algorithm, and positioning and navigation precision is substantially improved; lastly, the lowest requirement is that the two reflection panels are detected, but during actual application, multiple reflection panels can be possibly detected simultaneously, the reflection panel information is utilized to a maximum degree through designing data fusion processing, and precision is improved.

The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips. The AlGaInP-based LED with both the distributed Bragg reflector and the reflective metal layer according to the invention can fully utilize good reflectivity of the reflective layers to the extreme, and improve the light-emission efficiency of the AlGaInP-based LED effectively.

The invention relates to an atom gas cavity device with double reflectors and a groove-shaped structure and a manufacturing method of the atom gas cavity device. The atom gas cavity device is composed of a cavity body structure defined by a silicon wafer and a glass sheet in a bonding mode, wherein the bottom of the silicon wafer is provided with one reflector, the silicon wafer is provided with a groove, and the other reflector is arranged inside the glass sheet. The cross section of the groove is of an inversed trapezoidal shape structure, and is formed by a 100-type monocrystalline silicon wafer in a silicon anisotropic wet etching mode. The side walls of the groove are 111-type crystal faces of the silicon wafer. The interior of the glass sheet and the bottom of the groove of the silicon wafer are respectively provided with one reflector, and the reflectors are used for reflecting laser many times. The atom gas cavity device can be used for atomic clocks, magnetometers and other systems, laser is reflected many times between the double reflectors, the space length of interaction between laser and atom gas is increased, the signal-to-noise ratio of coherent population trapping signals is increased, and system stability can be improved.

The invention relates to a GaN-based LED with dual reflecting layers. The GaN-based LED comprises a substrate, an epitaxial layer, a current extension layer and a P electrode, wherein the epitaxial layer is formed on the substrate and comprises a P-type layer, a light-emitting region and an N-type layer; the current extension layer is formed on the P-type layer; and the P electrode is formed on the current extension layer. The GaN-based LED is characterized in that a reflecting structure is formed between the P electrode and the epitaxial layer and is composed of an annular reflecting layer and a metal reflecting layer, wherein the geometric center of the reflecting structure corresponds to the P electrode in the vertical direction, and the annular reflecting layer is formed between the current extension layer and the P-type layer; the metal reflecting layer is formed between the current extension layer and the P electrode; and a preset distance is reserved between the annular reflecting layer and the metal reflecting layer. According to the invention, the annular reflecting layer and the metal reflecting layer are additionally arranged between the epitaxial layer and the P electrode of the LED, so that light emitted from the light-emitting layer can be effectively taken out, the light absorption phenomenon of the P electrode is reduced, and therefore the light-emitting efficiency is increased.

An imaging spectrometer based on concentric off-axis double reflection systems comprises an entrance slit, a collimation optical system, a plane grating, a focusing optical system and an array detector. The collimation optical system and the focusing optical system of the imaging spectrometer are respectively a concentric off-axis double reflection system and share the same optical parameters. Emergent light passing through the entrance slit is projected into the collimation optical system and is projected to the plane grating after light beam collimation is carried out through the collimation optical system, light beams diffracted from the plane grating are projected into the focusing optical system again, and the light beams are focused through the focusing optical system to form an image on the array detector. The imaging spectrometer resolves the problem that coma and astigmatism of a traditional plane grating imaging spectrometer are difficult to correct at the same time, and can achieve higher spectrum resolution and imaging resolution. Optical surfaces of all reflecting mirrors of the imaging spectrometer are spherical surfaces and have a common sphere center, so not only can optical machining difficulty and machining cost be reduced, but also adjustment and testing of engineering optics are facilitated.

The present invention relates to an equipment for measuring thickness of polishing liquid film. Its technical problem required to solve lies in that the change of liquid film thickness can be converted into the change of turning angle of lower reflector relative to upper reflector. The technical scheme of solving said problem lies in that in angle-changeable double-reflector it adopts a structure in which a light sldie carriage is used to upwards support the lower reflector whose top rod support is equipped with smooth rotating shaft and make the lower reflector turn round rotating shaft, and utilizes the angle-changeable double-reflector mounted opposite to reflecting surface to make multiple reflection and emit laser beam, and said laser beam can be received by frosted glass. Said invention contains polishing system and measuring system, and implement reel-time dynamic measurement of liquid film thickness, can promptly regulate liquid film thickness, improve polishing conditon, raise working efficiency and ensure polishing quality.