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34results about How to "Withstand voltage" patented technology

Silicon carbide semiconductor device and method for manufacturing the same

A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
Owner:DENSO CORP +1

Electrostatic discharge protection device in integrated circuit

An electrostatic discharge protection device of a semiconductor integrated circuit, comprising a first diffusion layer that is a diffusion layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type and serves as a collector, a second diffusion layer that is a diffusion layer of the first conductivity type provided in the first diffusion layer and serves as a base, a third diffusion layer that is a diffusion layer of the second conductivity type provided in the second diffusion layer and serves as an emitter, a collector contact region provided in the first diffusion layer, a fourth diffusion layer that is a diffusion layer of the second conductivity type provided in the first diffusion layer in a downward region of the collector contact region in a substrate-thickness direction, wherein the fourth diffusion layer is formed shallower in a depth than that of the first diffusion layer in the substrate-thickness direction, deeper in a depth than that of the second diffusion layer in the substrate-thickness direction and with a high density than that of the first diffusion layer, and an insulation film formed on a surface of the first diffusion layer between the second diffusion layer and the collector contact region and serving as a field, wherein the fourth diffusion layer is extended up until a region below the insulation film.
Owner:PANASONIC CORP

Coil device

ActiveUS20170154720A1Excellent initial magnetic permeabilityExcellent core lossTransformers/inductances casingsTransformers/inductances coils/windings/connectionsMetal powderFerric
A coil device comprising a coil, and a magnetic metal powder containing resin covering said coil. Said magnetic metal powder comprises at least two types of magnetic metal powders with different D50. The magnetic metal powder having larger D50 is defined as a large diameter powder, and the magnetic metal powder having smaller D50 is defined as a small diameter powder among the two types of said magnetic metal powder. Said large diameter powder is made of iron or iron based alloy. Said small diameter powder is made of Ni—Fe alloy. Said small diameter powder has D50 of 0.5 to 1.5 μm. Said large diameter powder and said small diameter powder respectively comprises an insulation coating layer.
Owner:TDK CORPARATION

Multilayer printed board, electronic apparatus, and packaging method

A multilayer printed board comprising a plurality of capacitive coupling layers (6) each consisting of a dielectric layer (4) and a power supply layer (3) and a ground layer (5) facing each other while sandwiching the dielectric layer (4), first vias (7) connecting between the power supply layers (3) included in the plurality of capacitive coupling layers (6), and second vias (8) connecting between the ground layers (5) included in the plurality of capacitive coupling layers (6).
Owner:FUJITSU LTD

Semiconductor device and semiconductor package

A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.
Owner:ROHM CO LTD

Aluminum alloy plate and producing method thereof

The invention provides a an aluminum alloy plate which has good insulating properties, good voltage resistance and good high temperature resistance and a producing method of the aluminum alloy plate. The aluminum alloy plate of a substrate with insulating properties comprises 0.6-3.0 mass% of copper and other elements which contains less than 0.1 mass% of unavoidable impurities except aluminum and copper.
Owner:FUJIFILM CORP +1

Silicon carbide semiconductor device and method for manufacturing the same

A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
Owner:DENSO CORP +1

In situ overvoltage protection for active bridge applications

An overvoltage protection device protects a half bridge circuit that receives a supply voltage. The overvoltage protection device includes a high speed overvoltage detector that receives the supply voltage, detects whether an overvoltage situation is present, and outputs an overvoltage signal that disables the switches of the half bridge circuit before the switches can be damaged by the overvoltage situation. With both the switches of the half-bridge disabled, the entire supply voltage appears across the two switches in series, by which each switch only receives half the entire voltage. Thus, by quickly disabling both switches of the half-bridge each switch only needs a maximum voltage rating equal to half the maximum voltage rating of the half bridge circuit as a whole. This leads to reduced size and cost for the switches of the half-bridge circuit.
Owner:STMICROELECTRONICS INT NV

Heat insulation-type cable

The invention discloses a heat insulation-type cable, which comprises a cable core. An inner sheath and an outer sheath are extruded outside the cable core; the cable core is composed of a triangular support, three insulated wire cores mutually extruded inside the triangular support and ground wires located at three vertex angles of the triangular support; a ceramic fiber is arranged between the triangular support and the inner sheath; and an elastic buffer layer with a thickness of 2 to 5 mm, a metal armored layer with a thickness of 2 to 4 mm and a rock wool heat insulation layer with a thickness of 3 to 6 mm are sequentially arranged between the inner sheath and the outer sheath. Through arranging multiple heat insulation structures, the cable of the invention has the advantages of good heat insulation performance, high temperature resistance, good heat stability, low heat conductivity and the like.
Owner:WUXI NEW SUNSHINE CABLE

Cell library database and timing verification and withstand voltage verification systems for integrated circuit using the same

In a cell library database, timing verification is conducted on an LSI which exists in a variable power supply system capable of changing the source voltage arbitrarily and which includes logic delay information associated with a plurality of source voltages. The database is configured, for example, so that the voltage information V of the source is represented in multiple bits V [1:0] and delay times Alh (Vlh) to Bhl (Vhh) between the time input signals A and B are each changed and the time the output signal Y changes are described for respective pieces of source voltage information LH (1.2 V), HL (1.5 V) and HH (1.8 V). This allows timing verification in the variable source system which operates with the source voltage changed dynamically.
Owner:SOCIONEXT INC

Manufacturing method of graphene oxide super-thermal conductive aluminum-based copper clad laminate

The invention discloses a manufacturing method of a graphene oxide super-thermal conductive aluminum-based copper clad laminate, and belongs to the field of metal substrates. The method comprises thefollowing steps: performing ultrasonic vibration stirring on 100 parts of graphite powder, 10-50 parts of concentrated sulfuric acid and 10-50 parts of potassium permanganate, separating graphene oxide by a high-speed shearing machine, uniformly mixing 50-150 parts of graphene oxide, 100 parts of epoxy resin, 10 parts of polyethylene butyral, 2 parts of dicyandiamide, 100 parts of acetone and 10-50 parts of alumina to obtain a super-thermal conductive medium glue, coating the super-thermal conductive medium glue on the upper surface of an aluminum substrate and the lower surface of a copper foil layer, adhering the upper surface of the aluminum substrate coated with the super-thermal conductive medium glue to the lower surface of the copper foil layer coated with the super-thermal conductive medium glue and performing drying for 5-15 min at 160-170 DEG C to obtain a semi-finished product of the graphene oxide super-thermal conductive aluminum-based copper clad laminate, and performinghot pressing on the semi-finished product for two hours at 170-180 DEG C and 2-4 MPa to obtain the finished product of the graphene oxide super-thermal conductive aluminum-based copper clad laminate.The copper clad laminate can be used as a load bearing substrate for lamps and lanterns. The structure is simple, the effect is good, and the cost is low.
Owner:郭凯华 +1

Semiconductor device and semiconductor package

A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.
Owner:ROHM CO LTD

Crosslinked polyethylene insulated multi-core flame retardant cable

The invention discloses a crosslinked polyethylene insulated multi-core flame retardant cable, which comprises a cable core. The gap of the cable core is provided with an inorganic mineral oxygen barrier layer; the cable core is wrapped with a first polyester tape; a semi-conductive shielding layer is extruded outside the polyester tape; a steel strip armored layer is arranged outside the inner semi-conductive shielding layer; a rock wool heat insulation layer is extruded outside the steel strip armored layer; and the outermost layer of the cable is provided with a silica fireproof sleeve; the cable core is formed by stranding a ground wire and two insulated wire cores arranged symmetrically with the ground wire as an axial center in a horizontal mode; and the cable core is internally provided with a group of through holes symmetrically with the ground wire as the axial center. The crosslinked polyethylene insulated multi-core flame retardant cable has the advantages of good flame retardancy, high temperature resistance, good cooling performance, fire resistance, good insulated performance and the like.
Owner:WUXI NEW SUNSHINE CABLE

Coil device

A coil device comprising a coil, and a magnetic metal powder containing resin covering said coil. Said magnetic metal powder comprises at least two types of magnetic metal powders with different D50. The magnetic metal powder having larger D50 is defined as a large diameter powder, and the magnetic metal powder having smaller D50 is defined as a small diameter powder among the two types of said magnetic metal powder. Said large diameter powder is made of iron or iron based alloy. Said small diameter powder is made of Ni—Fe alloy. Said small diameter powder has D50 of 0.5 to 1.5 μm. Said large diameter powder and said small diameter powder respectively comprises an insulation coating layer.
Owner:TDK CORPARATION

Separator for nonaqueous electrolyte secondary battery

A separator for a nonaqueous secondary battery includes a plurality of cellulose nanofibers and a hydroxyl group-masking component for masking hydroxyl groups on a surface of the cellulose nanofibers, wherein the cellulose nanofibers are cross-linked by the hydroxyl group-masking component to form a nonwoven fabric; as well as a nonaqueous electrolyte secondary battery including the separator, and a method of preparing the separator.
Owner:SAMSUNG ELECTRONICS CO LTD

Non-halgen flame retardant wire

The invention provides a halogen free flame retardant electronic wire that has excellent characteristics of flexibility and voltage resistance by optimizing resin match in an electrical insulator formed by an inner and an outer layer. The halogen free flame retardant electronic wire insulates in periphery of a conductor (2) by an electrical insulator (5) formed by an inner and an outer layer (3, 4). The inner layer (3) is formed by adding improved ethylene / ethyl acrylate polymer by maleic anhydride of 5 weight parts to 40 weight parts and metal hydroxids (improving rate of the maleic anhydride is 1% to 40%) in 100 weight parts of ethylene / ethyl acrylate polymer with content of vinyl acetate is more than or equal to 60% but less than or equal to 80%. The outer layer (4) is formed by adding metal hydroxids in the ethylene / ethyl acrylate polymer with content of vinyl acetate is more than or equal to 30% but less than or equal to 60%. In addition, thickness of the formed outer layer (4) is greater than that of the inner layer (3).
Owner:SUMITOMO ELECTRIC IND LTD

Capacitor and method for manufacturing the same

A capacitor that includes a substrate, a dielectric portion, and a conductor layer. The dielectric portion includes a thick film portion and a thin film portion. The thick film portion has a thickness larger than the average thickness of the dielectric portion in a direction perpendicular to the first main surface. The thin film portion has a thickness smaller than the average thickness of the dielectric portion in the direction perpendicular to the first main surface. The thick film portion has a larger relative permittivity than the thin film portion.
Owner:MURATA MFG CO LTD

On-line toning electrophoresis paint and preparation method thereof

The invention relates to on-line color-mixing electrophoresis paint, which is characterized in that the paint comprises following components with parts by weight of 50-70 parts of water-base resin, 1-3 anti-rot pigment, 6-9 titanium dioxide, 1-3 yellow pigment, 2-4 red pigment, 3-6 filling, 0.5-1 anti-immersion pigment, 0.2-0.6 dispersing agent, 1-3 neutralizing agent, 8-15 deionized water and 6-10 auxiliary solvent. The beneficial effect of the invention is that on-line color-mixing electrophoresis has the characteristics of voltage resistance, salt fog resistance and easy dispersion, can beprepared into complex pigment, and has excellent paint film property and favorable stability. The paint has excellent of pigment wetting dispersing function, can be used to research on-line color-mixing color master-batch paint through optimizing pigment, anti-immersion agent and auxiliary agent and the like, achieves the technical requirements of on-line color-mixing paint, monitors the generation of tank liquor of electrophoresis paint production flow in different time through utilizing the beam splitting and color measurement technology and gas chromatography technology, the change of paint film and color difference delta E, and realizes the on-line color-mixing.
Owner:天津灯塔涂料工业发展有限公司

Network strong-interference resistance armored signal transmission cable for mine safety detection

The invention relates to a network strong-interference resistance armored signal transmission cable for mine safety detection, and belongs to the technical field of electric wires and cables. The network strong-interference resistance armored signal transmission cable for the mine safety detection comprises insulating wire cores, wherein conductors of the insulating wire cores are provided with insulating layers in an extruded mode, separated shields are weaved after pair twist is carried out on the insulating wire cores, a cable core is formed by the separated shields in a cabling mode, and a shielding layer, an inner protective layer, a corrosion preventing armor layer and a sheath are arranged on the cable core. The network strong-interference resistance armored signal transmission cable for the mine safety detection is reasonable and simple in structure, easy to produce and manufacture, low in cost and good in using performance, saves laying space, and is convenient to install. The network strong-interference resistance armored signal transmission cable for the mine safety detection has multiple functions, such as the function of voltage resistance, the function of strong interference resistance, the function of flame retardance and fire protection, the function of corrosion resistance, the waterproof function and the function of external-force impact resistance. The network strong-interference resistance armored signal transmission cable for the mine safety detection is an ideal cable for places of tunnels and pits.
Owner:JIANGSU SAIDE ELECTRIC

A heat-conducting gasket containing a hot-melt heat-conducting film and its preparation device

The invention relates to the technical field of heat conducting and heat dissipating devices and preparation methods and preparation devices thereof, and in particular relates to a holt-melting heat-conducting film, a heat-conducting liner including the hot-melting heat-conducting film and a preparation method and a preparation device thereof. The hot-melting heat-conducting film includes a heat conducting layer, wherein an adhesive layer is arranged on one surface of the heat conducting layer while a hot melt adhesive layer is arranged on the other surface of the heat conducting layer, a thin film layer is arranged on the adhesive layer, thus being simple in structure and good in heat conducting and heat dissipating effect; the heat conducting liner includes a hot-melting heat-conducting film and a support substrate, and contact point heat sources with a heat dissipating surface, thus improving heat dissipation efficiency; the preparation method comprises primarily forming, thermoforming, cooling for shaping and pulling and cutting to obtain finished products, so that the method is simple, production efficiency is improved, and production cost is reduced; the preparation device includes a control box, and a material rack, a primary forming mold, a thermoforming mold, a cooling shaping mold, an automatic puller, a counter and a cutting device sequentially arranged on an assembly line, one people can operated the whole assembly line, thus being saving in human and material resources.
Owner:东莞市黄江金杰工程技术工作室

In situ overvoltage protection for active bridge applications

An overvoltage protection device protects a half bridge circuit that receives a supply voltage. The overvoltage protection device includes a high speed overvoltage detector that receives the supply voltage, detects whether an overvoltage situation is present, and outputs an overvoltage signal that disables the switches of the half bridge circuit before the switches can be damaged by the overvoltage situation. With both the switches of the half-bridge disabled, the entire supply voltage appears across the two switches in series, by which each switch only receives half the entire voltage. Thus, by quickly disabling both switches of the half-bridge each switch only needs a maximum voltage rating equal to half the maximum voltage rating of the half bridge circuit as a whole. This leads to reduced size and cost for the switches of the half-bridge circuit.
Owner:STMICROELECTRONICS INT NV

Low-frequency transformer with built-in shielding layer

The invention discloses a low-frequency transformer with a built-in shielding layer. The low-frequency transformer comprises a shell with a bottom opening structure, a framework, a coil, pins and an iron core, the inner side of the shell is fixedly connected with a shielding layer, the inner side of the shielding layer is fixedly connected with a framework, the inner side of the framework is fixedly connected with the iron core, the outer surface of the iron core is provided with the coil, the bottom of the framework is fixedly connected with two groups of mounting plates of which the tops areof concave structures, and the inner sides of the tops of the mounting plates are fixedly connected with conducting strips. In the present invention, firstly, the shielding layer is arranged on the inner side of a shell, the shell is made of an aluminum nitride ceramic material, by means of the good insulating property and heat conductivity of the aluminum nitride ceramic material, the insulatingproperty of the low-frequency transformer is improved while the low-frequency transformer is subjected to good electromagnetic shielding, then, the pins are inlaid into the limiting grooves to be fixed under the extrusion effect of extrusion springs, installation of the pins is completed, and therefore, convenient disassembly and assembly of the pins are achieved.
Owner:怀化市中三源电子有限公司

Semiconductor device and manufacturing method thereof

Terminal assembly portions, lying on a front surface side of a case, are aligned in a left-right direction in a portion raised from a bottom of the case so that opening faces of the terminal assembly portions are positioned above circuit formation regions. Wiring terminal plates are led out into the terminal assembly portions, and disposed adjacent to each other. After each wiring terminal plate is connected by a laser welding to one end of one external connection terminal plate formed integrally with a cover, these welded portions are sealed with a second mold resin portion made of gel or an insulating resin such as epoxy. By so doing, even when the terminal junction area and distance between terminal junctions in the terminal assembly portions are small, it is possible to increase the joint strength of the terminals, and also secure withstand voltage.
Owner:FUJI ELECTRIC CO LTD

Semiconductor device

The external surface of a wide energy-gap semiconductor component is coated with a macromolecular compound synthesized from one or more siliceous polymers in cross-linked structure formed by Si-O-Si bonding. For example, the synthesized macromolecular compound is a siliceous polymer with one, two or more types of reaction base groups (A') selected from Si-R1, Si-O-R2, and Si-R3-OCOC(R4)=CH2, one or more parts in cross-linked structure formed by Si-O-Si bonding, and ingredients in average molecular weight <1000 less than 20 wt.%.
Owner:THE KANSAI ELECTRIC POWER CO +1
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