186results about How to "High withstand voltage" patented technology

A solid-state imaging device includes a first chip including a plurality of pixels, each pixel including a light sensing unit generating a signal charge responsive to an amount of received light, and a plurality of MOS transistors reading the signal charge generated by the light sensing unit and outputting the read signal charge as a pixel signal, a second chip including a plurality of pixel drive circuits supplying desired drive pulses to pixels, the second chip being laminated beneath the first chip in a manner such that the pixel drive circuits are arranged beneath the pixels formed in the first chip to drive the pixels, and a connection unit for electrically connecting the pixels to the pixel drive circuits arranged beneath the pixels.

The invention provides an electrolyte for driving an ultrahigh voltage large-sized aluminium electrolytic capacitor and a solute thereof. The solute of the electrolyte for driving the ultrahigh voltage large-sized aluminium electrolytic capacitor is a high-molecular solute, and the preparation process comprises the following steps of: uniformly mixing a polyalcohol polymer with hydroxyl at a tail end and a saturated or unsaturated binary or polybasic acid according to a certain proportion; adding a certain amount of catalyst; carrying out condensation and esterification reaction at certain temperature under the condition of decompression, cooling, and separating an ester, wherein the total number of carbon atoms positioned on a main chain of the ester is 15 or more than 15; and dissolving the ester into a solvent to prepare a solution with certain concentration, then introducing ammonia so that the pH of the solution reaches a certain range, and stopping introducing the ammonia so that the ester reacts with the ammonia to form ester ammonium salt, wherein the ester ammonium salt is the high-molecular solute used for the electrolyte. The aluminium electrolytic capacitor has very high voltage resistance, larger ripple current bearing and high reliability and finished product ratio when using the electrolyte prepared by the solute.

The invention provides a dielectric medium of a ceramic capacitor, which is prepared from the following raw materials in percentage by weight: 54 to 91 percent of BaTiO3, 2 to 13 percent of SrTiO3, 2 to 15 percent of BaZrO3, 0.05 to 1 percent of Nb2O5, 0.03 to 1.0 percent of CeO2, 0.1 to 1.0 percent of ZnO, 0.03 to 1.0 percent of Co2O3, and 2 to 15 percent of BaSiO3. The invention also provides apreparation method of the dielectric medium of the ceramic capacitor. The dielectric medium of the ceramic capacitor has high dielectric constant and high withstand voltage, generates no pollution tothe environment in the process of preparation and use, and can reduce the cost of the ceramic capacitor, so the dielectric medium is suitable for preparing monolithic ceramic capacitors and multilayer chip ceramic capacitors.

The invention relates to the technical field of inorganic nonmetallic materials, in particular to low-temperature-sintered giant-dielectric ceramic capacitor dielectric with the low capacitor temperature change rate.The low-temperature-sintered giant-dielectric ceramic capacitor dielectric is prepared from 88 wt%-96 wt% of CaCu3Ti4O12, 0.01 wt%-7.0 wt% of (Ba0.65Sr0.35)TiO3, 0.01 wt%-6 wt% of Bi2WO6, 0.01 wt%-0.6 wt% of Nd2O3, 0.1 wt%-4 wt% of SiO2-Li2O-B2O3 glass powder (ZLB), 0.01 wt%-0.5 wt% of BiMnO3 and 0.5 wt%-4 wt% of (Li(1 / 2)Bi(1 / 2))TiO3.The lead-free cadmium-free giant-dielectric ceramic capacitor dielectric with the low capacitor temperature change rate is prepared by adopting the ordinary chemical raw materials of capacitor ceramic, and the sintering temperature of the capacitor ceramic can be greatly lowered.

The present invention relates to technical field of inorganic non-metal materials, particularly to a low temperature sintering high voltage ceramic capacitor dielectric, wherein the formula of the dielectric comprises, by weight, 60-91% of BaTiO3, 1-13% of SrTiO3, 2-15% of BaZrO3, 0.05-2% of Nb2O5, 0.1-1.5% of ZnO, 0.03-2.0% of Co2O3, 0.5-6% of ZnB2O4 glass powder, and 0.5-4% of BaCu(B2O5). According to the present invention, the conventional ceramic capacitor dielectric preparation method is adopted, and ordinary capacitor ceramic chemical raw materials are utilized to prepare the lead-free and cadmium-free high dielectric high voltage ceramic capacitor dielectric so as to substantially reduce a sintering temperature of the ceramic capacitor; and the dielectric is suitable for preparation of monolithic ceramic capacitors and multi-layer ceramic capacitors, wherein a ceramic capacitor cost can be substantially reduced, a withstand voltage can be increased, an application range of the ceramic capacitor can be broadened, and no environment pollution is generated during preparation and use processes.

To prevent the adhesion of the foreign matters to the contacts and also to prevent damage to the electronic circuit of the connected equipment by the electrostatic discharge, in the electric connector with a shutter equipped with a housing having an engagement part arranged with a plurality of contacts and a pair of shutter members covering the engagement part of the housing in free opening and shutting. The pair of shutter members are made of metal and are energized in the direction of the edges approaching each other, and in the state of the edges approached together, cover the engaging part, and release the engagement part when the edges are separated. The housing is equipped with a shield member 13 that surrounds the surroundings of the housing and has a protrusion 133 that is clipped by the pair of shutter members when the edges come close.

The invention relates to the technical field of inorganic nonmetallic materials, in particular to a low-loss high-voltage ceramic capacitor dielectric. By adopting a conventional ceramic capacitor dielectric preparation method and using common chemical raw materials for capacitor ceramic, a lead-free and cadmium-free low-loss high-voltage ceramic capacitor dielectric is prepared and the sintering temperature of the capacitor ceramic can be reduced. The dielectric is suitable for preparing monolithic ceramic capacitors or chip multi-layer ceramic capacitors, the cost of the ceramic capacitors can be greatly reduced, the withstand voltage can be improved and the losses can be reduced to expand the application scope of the ceramic capacitors, the safety of the ceramic capacitors can be greatly improved and the environment is not polluted during preparation and use at the same time.

The invention relates to the technical field of inorganic non-metal materials, and particularly discloses a low temperature coefficient crystal boundary layer ceramic capacitor medium and a preparation method thereof. The medium formula comprises the following components in percentage by weight: 88 to 96 percent of SrTiO3, 0.1 to 4 percent of LiNbO3, 0.05 to 4 percent of Dy2O3, 0.03 to 3.0 percent of SiO2-B2O3-Li2O glass powder, 0.1 to 4 percent of CuO, 0.01 to 1 percent of SiO2, and 0.03 to 2.0 percent of MnO, wherein SrTiO3, LiNbO3 and SiO2-B2O3-Li2O glass powder are respectively compounded by conventional chemical raw materials through a solid phase method. According to the invention, a conventional ceramic capacitor medium preparation method and a one-time sintering technological method are adopted, the common capacitor ceramic chemical raw material is adopted to prepare the lead-free and cadmium-free low temperature coefficient crystal boundary layer ceramic capacitor medium, the sintering temperature of capacitor ceramic can be also lowered, and the medium is applicable to the preparation of monolithic ceramic capacitors and monolayer chip ceramic capacitors.

The invention relates to the technical field of capacitors, and discloses a trapezoidal evaporation metalizing polypropylene film capacitor, which comprises a casing, capacitor cores, a leading-out terminal and a leading-out electrode, wherein the capacitor core comprises a high temperature-resistant polypropylene film, the polypropylene film is evaporated with a metal aluminum layer as an electronic moving area under the high-vacuum environment, the moving area is of a trapezoidal structure, the edge of the moving area is thickened and evaporated with a pure zinc layer as a thickening area, the evaporation trapezoidal square resistance in the moving area is controlled to 30-50 ohms, the square resistance in the thickening area is controlled to 2-4 ohms, and two to three capacitor cores are parallelly connected in the capacitor. The capacitor has the advantages that the voltage resistant property is high, the loss is little, the effective current can be withstood, the impact capacity is high, the temperature rise is low, the self equivalent serial resistance of the capacitor is little, the anti-oxidizing capacity is high, the safety and reliability are high, the service life is long, the storage is easy, the heat radiating property is good, and the cost is low.

The present invention relates to a terminal device for an electronic apparatus, which includes an external lead out rod having a convex side part on the center; an insulation terminal seat consists of an outer insulation terminal seat and an inner insulation terminal seat, wherein one has a concave part and the other has a convex part and the two parts forms a concavo-convex part, and a counter boring for preventing the external lead out rod from rotating is formed on the outer insulation terminal seat; a casing of a through hole that the convex part of the insulation terminal seat goes into the outer terminal seat to prevent rotating; a fixing mechanism for fixing the external lead out rod on the casing through said insulation terminal seat; a concavo-convex part sets an inner terminal seat and an outer terminal seat in and out of the through hole of the casing. The terminal device is satisfactory in rotation preventing function to the rotational torque at a terminal part and is satisfactory in setup work by preventing deterioration of the functions of the terminal part, caused by human error and by making it into a structurally simple constitution, and is high in operability, and is capable of price reduction, too.