30results about How to "Reduce the impact of subsequent processes" patented technology

The present invention is production process of high grade piperyene petroleum resin. The piperyene petroleum resin is produced with separated and purified C5 cracking fraction rich in diolefin and coarse pentene to form the copolymerization material liquid in C5 olefin content of 80-92 wt%, AlCl3, main solvent and cosolvent mixed to react to produce cationic complex polymerization catalyst, and recovered C5 fraction as polymerization solvent, and through polymerization at 10-80 deg.c and 0.03-0.40 MPa for 2-5 hr, and neutralization and water washing after polymerization. The piperyene petroleum resin has high softening point, low color hue, high transparency, low melt viscosity, high heat resistance and high weather resistance. The production process has reaction yield up to 92-96 % and low production cost.

The invention relates to a method for selectively leaching vanadium from vanadium-contained stone coals. The method comprises the following steps: firstly, a crude ore of the vanadium-contained stone coals is crushed, and is ground to obtain vanadium-contained stone coal mineral powder with particle sizes lower than 0.074 mm of 65-80 wt%; the vanadium-contained stone coal mineral powder is added in water; 0.5-1.25 kg vanadium-contained stone coal mineral powder is added in each liter of water; then, a leaching agent is added; 0.3-1 kg leaching agent is added in each liter of water; the stirring is performed by 3-7 h under the condition of 80-100 DEG C; and the solid-liquid separation is performed to obtain vanadium-contained leaching liquid and leaching slag. The leaching agent is a mixture consisting of fluorides and oxalic acid; the mass ratio of the fluorides to the oxalic acid in the leaching agent is 1: (8-15); and the fluorides are more than one of calcium fluoride, sodium fluoride, potassium fluoride, ammonia fluoride and ammonium bifluoride. The method can selectively leach vanadium from the vanadium-contained stone coals, realizes effective separation of vanadium and impurity iron, obtains the vanadium-contained leaching liquid with low iron content, and reduces the influence of iron on subsequent process.

The invention discloses a preparation method of an ertapenem single sodium salt. The method comprises the following steps: dissolving a 1-beta-methyl carbapenem bicyclic parent nucleus and an ertapenem side chain in acetonitrile or DMF (N,N-dimethylformamide), and carrying out condensation in the existence of organic alkali until the reaction finishes; adding tetrahydrofuran or ethyl acetate or a tetrahydrofuran-ethyl acetate mixed solvent into the reaction solution, adding a sodium bicarbonate solution and palladium-carbon, and introducing hydrogen for hydrogenation; and after the reaction finishes, filtering, washing the filtrate, regulating different pH values of the water phase, washing, crystallizing by using a mixed solvent of two or three of alcohols, esters and ethers, filtering, and eluting the filter cake with acetone to obtain the ertapenem single sodium salt. The compounds disclosed as Formula 4 can be directly used for the next reaction step without separation, thereby avoiding the quality reduction of the compounds disclosed as Formula 4, and lowering the influence of the intermediate impurities on the subsequent technique. The solution can be directly crystallized, filtered, and dried to obtain the ertapenem sodium. The end product has the advantages of simpler purification, higher product quality and higher yield.

The embodiments of the present invention provide a flexible touch control mother board, a manufacturing method thereof, a flexible touch control board and a touch control panel, relating to the technical field of display, able to reduce the square resistance and improve the stress of a film layer at the same time, to prevent the poor bubbling and to improve the product quality rate. The preparation method includes: patterning a first transparent conductive layer formed on a flexible film to form first and second electrodes; and forming a first transparent conductive layer by a plurality of deposited first transparent conductive films, wherein the deposited first transparent conductive film of the first layer has a thickness of 15-45 nm, and the total thickness of the plurality of the first transparent conductive films is 120-200 nm.

The invention relates to a method for recycling and removing aluminum from waste lithium iron phosphate batteries. The method comprises the following steps: sequentially carrying out aluminum removal reaction, solid-liquid separation, i-time washing and leaching treatment on positive electrode material powder of the waste lithium iron phosphate batteries, wherein j + 1th washing liquid obtained after j + 1th washing in the previous batch is adopted for j-th washing, and pure water is adopted for i-th washing; wherein 2 < = i < = 6, 1 < = jlt; i, and i and j are integers. According to the method, aluminum removal through dilute acid replaces aluminum removal through an alkaline method in the prior art, and the method is simple, efficient, safe, environmentally friendly and convenient for industrial application; meanwhile, the aluminum removal effect is good, and lithium loss and iron loss are small; aluminum removal is completed before leaching, so that the influence of aluminum on the subsequent process can be greatly reduced, and the recovery efficiency of the waste lithium iron phosphate battery is improved; and circulating countercurrent washing is adopted, so that the use efficiency of water is increased to the greatest extent, the use amount of water is reduced, and the production cost is reduced.

The invention discloses a method for removing a layer from a III-V material chip. The method comprises the following steps of: MXS1, preparing a target chip to be subjected to layer removal; S2, grinding the target chip, grinding off the packaging material of the target chip until the substrate layer is completely exposed, and taking the surface as an upper surface; S3, placing the target chip on a glass base with the target chip facing upwards, covering the outer surface of the chip with the prepared epoxy resin, and waiting until the epoxy resin is completely cured; S4, after the epoxy resin is completely cured, thinning the chip embedded with the epoxy resin on a polishing machine; S5, grinding the substrate layer of the target chip, and then sequentially removing M1 layers of the chip till the (MX)th layer, X being larger than 1 and less than 3. The beneficial effects of the method are that the embedding method with packaging reduces the damage to the target chip in a de-encapsulation process, and protects the target chip better; and a reverse delaminating mode is adopted, so that the influence of the substrate layer on a subsequent process is reduced, and the risk of damage and cracking of the target chip is further reduced.

The invention discloses a sewage treatment plant pretreatment intelligent comprehensive pool. The intelligent comprehensive pool comprises an accident emergency pool, a homogenizing regulation pool and a sedimentation pool, and the accident emergency pool and the sedimentation pool are located on the two sides of the homogenizing regulation pool respectively. When the intelligent comprehensive pretreatment pool for the sewage treatment plant is used, according to the online detection result of the inflow water quality, reagents of different types and concentrations are added into different functional areas in an auxiliary manner, and the emergency and pretreatment effects of the sewage treatment plant are achieved; the whole pretreatment intelligent comprehensive pool is reasonable in structural design and high in adaptability to inflow water quality and quantity fluctuation, the influence of the water quality and quantity fluctuation on subsequent processes is reduced, the occupied area is reduced, the investment and operation cost is reduced, meanwhile, different process effects can be achieved by adaptively adjusting all valves according to requirements, and the emergency guarantee capacity is high.

The invention discloses petrochemical oil refining and coking equipment. The equipment structurally comprises a slag removal pipe machine body, a bottom cover machine, a connecting groove frame, a coking furnace, a top cover machine, a connecting pipe and a tail gas absorption tower, and the connecting groove frame is installed below the bottom cover machine and connected with the bottom cover machine in a locked mode. When the equipment is used, by arranging the slag removal pipe machine body, the situation that gas which is subjected to coking treatment of the coke tower and is directly transferred upwards contains a part of coke slag, the coke slag is continuously attached to the inner wall of the transfer pipe in the transfer process, and due to the particularity of the position, the coke slag is inconvenient to clean, finally an internal pipeline of the tail gas absorption tower is easily blocked, operating burden is brought to subsequent exhaust gas treatment facilities or damage is caused to the facilitiescan be avoided. I the coking process of an equipment coke tower, gas generated by the equipment coke tower passes through the pretreatment pipe along the connecting pipe, then coke is attached to the inner wall of the pretreatment pipe firstly, slag scraping piece devices are matched with one another, and coke residue components in the inner pipeline can be effectively scraped off and are uniformly collected under the mutual cooperation of the residue collecting cylinders, so that the influence of the coke residue components on subsequent procedures is reduced.

A method for forming a semiconductor structure, an LDMOS transistor, and a method for forming the LDMOS transistor are provided. The method for forming the semiconductor structure includes providing abase including a substrate and a fin on the substrate; performing an isolation injection process to form an isolation region in the fin portion. The isolation region is formed by an isolation injection process, so that the process of forming the isolation region does not require etching of the fins, the surface topography of the substrate is not changed, the influence of the formation process ofthe isolation zone on the follow-up process can be reduced, the process difficulty of the follow-up step can be reduced, and the process quality of the following step can be improved; As the semiconductor structure is used for forming the LDMOS transistor, the technical proposal of the invention is favorable for improve the process quality and improving the electrical performance of the formed LDMOS transistor.