Method for removing layer of III-V group material chip

Abstract

The invention discloses a method for removing a layer from a III-V material chip. The method comprises the following steps of: MXS1, preparing a target chip to be subjected to layer removal; S2, grinding the target chip, grinding off the packaging material of the target chip until the substrate layer is completely exposed, and taking the surface as an upper surface; S3, placing the target chip on a glass base with the target chip facing upwards, covering the outer surface of the chip with the prepared epoxy resin, and waiting until the epoxy resin is completely cured; S4, after the epoxy resin is completely cured, thinning the chip embedded with the epoxy resin on a polishing machine; S5, grinding the substrate layer of the target chip, and then sequentially removing M1 layers of the chip till the (MX)th layer, X being larger than 1 and less than 3. The beneficial effects of the method are that the embedding method with packaging reduces the damage to the target chip in a de-encapsulation process, and protects the target chip better; and a reverse delaminating mode is adopted, so that the influence of the substrate layer on a subsequent process is reduced, and the risk of damage and cracking of the target chip is further reduced.

Description

technical field [0001] The invention relates to the technical field of material chip processing, in particular to a delayering method for III-V group material chips. Background technique [0002] III-V group semiconductor materials are compounds composed of IIIA elements and VA group elements in the periodic table of elements, with a chemical composition ratio of 1:1, mainly including the following compounds: GaAs, GaP, InP, etc.; III-V group semiconductor materials With a wider band gap, it is widely used in high-speed, high-frequency, high-power chips and light-emitting devices, especially in the rapid development of semiconductor lighting and communication technology, and the demand for process analysis of related chips is also increasing day by day; [0003] The existing chip delayering process is to completely remove the chip package, and then remove it layer by layer from the top layer of the chip; but for the III-V semiconductor material chip, due to its soft material...

AI Technical Summary

Problems solved by technology

[0003] The existing chip delayering process is to completely remove the chip package, and then remove it layer by layer from the top layer of the chip; but for the III-V semiconductor material chip, due to its soft material, in the process of grinding and etching Metal is easily damaged, and its dif layer is also prone to breakage under the action of external force