Method for forming semiconductor structure, ldmos transistor and method for forming same

Abstract

A method for forming a semiconductor structure, an LDMOS transistor, and a method for forming the same. The method for forming the semiconductor structure includes: providing a base, the base including: a substrate and a fin located on the substrate; performing isolation implantation treatment, in the An isolation region is formed within the fin. The isolation region is formed by isolation implantation, so the process of forming the isolation region does not need to etch the fin, which can effectively reduce the difficulty of the formation process and will not change the surface morphology of the substrate, It can reduce the impact of the formation process of the isolation region on the subsequent process, thereby helping to reduce the process difficulty of the subsequent steps and improve the process quality of the subsequent steps; when the semiconductor structure is used to form LDMOS transistors, the technical solution of the present invention has It is beneficial to improve the process quality and to improve the electrical performance of the formed LDMOS transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure, an LDMOS transistor and a method for forming the same. Background technique [0002] A lateral diffusion field effect (Lateral Diffusion MOS, LDMOS) transistor is a semiconductor structure that forms a lateral current path on the surface of a semiconductor substrate through planar diffusion. Compared with traditional MOS transistors, LDMOS transistors have a lightly doped region between the source region and the drain region, which is called a drift region. Therefore, when the LDMOS transistor is connected to a high voltage between the source region and the drain region, the drift region can withstand a higher voltage drop, so the LDMOS transistor can have a higher breakdown voltage. [0003] The LDMOS transistor includes a source region within a semiconductor substrate, a drain region, and a channel region between the so...

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Problems solved by technology

[0005] However, after the introduction of the fin field effect transistor structure, the electrical performance of the LDMOS transistor formed by the prior art still needs to be improved.

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