Method for forming semiconductor structure, LDMOS transistor and method for forming same

A technology for semiconductors and transistors, applied in the field of semiconductor manufacturing, can solve the problem that the electrical properties of LDMOS transistors need to be improved, and achieve the effects of weakening the surface electric field and increasing the breakdown voltage.

Active Publication Date: 2018-12-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, after the introduction of the fin field effect transistor structure, the electrical performance of the LDMOS transistor formed by the prior art still needs to be improved.

Method used

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  • Method for forming semiconductor structure, LDMOS transistor and method for forming same
  • Method for forming semiconductor structure, LDMOS transistor and method for forming same
  • Method for forming semiconductor structure, LDMOS transistor and method for forming same

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Embodiment Construction

[0021] It can be seen from the background art that after the fin field effect transistor structure is introduced, the electrical performance of the LDMOS transistor formed in the prior art still needs to be improved. Combining with the formation process of an LDMOS transistor, the reason why its electrical performance still needs to be improved is analyzed:

[0022] In the LDMOS transistor, there is a drift region with a lower doping concentration between the source region and the drain region, and the drift region has a higher resistance value and can withstand a higher voltage. In addition, the isolation structure is introduced into the drift region, and the gate structure covers part of the isolation structure, so as to weaken the surface electric field of the drift region, so as to improve the withstand voltage performance of the LDMOS transistor.

[0023] refer to Figure 1 to Figure 4 , shows a schematic cross-sectional structure corresponding to each step in the formati...

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Abstract

A method for forming a semiconductor structure, an LDMOS transistor, and a method for forming the LDMOS transistor are provided. The method for forming the semiconductor structure includes providing abase including a substrate and a fin on the substrate; performing an isolation injection process to form an isolation region in the fin portion. The isolation region is formed by an isolation injection process, so that the process of forming the isolation region does not require etching of the fins, the surface topography of the substrate is not changed, the influence of the formation process ofthe isolation zone on the follow-up process can be reduced, the process difficulty of the follow-up step can be reduced, and the process quality of the following step can be improved; As the semiconductor structure is used for forming the LDMOS transistor, the technical proposal of the invention is favorable for improve the process quality and improving the electrical performance of the formed LDMOS transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure, an LDMOS transistor and a method for forming the same. Background technique [0002] A lateral diffusion field effect (Lateral Diffusion MOS, LDMOS) transistor is a semiconductor structure that forms a lateral current path on the surface of a semiconductor substrate through planar diffusion. Compared with traditional MOS transistors, LDMOS transistors have a lightly doped region between the source region and the drain region, which is called a drift region. Therefore, when the LDMOS transistor is connected to a high voltage between the source region and the drain region, the drift region can withstand a higher voltage drop, so the LDMOS transistor can have a higher breakdown voltage. [0003] The LDMOS transistor includes a source region within a semiconductor substrate, a drain region, and a channel region between the so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/78H01L21/336
CPCH01L29/063H01L29/0649H01L29/1033H01L29/66681H01L29/7816
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP
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