The invention relates to a
silicon oxide single-coated cesium-
copper-
chlorine quantum dot, and a preparation method and application thereof, and belongs to the technical field of
quantum dots. A low-temperature
coating technology is utilized, a precursor is utilized to capture water in air at a relatively low temperature, rapid
hydrolysis is carried out,
silicon oxide successfully coats the surface of the cesium-
copper-
chlorine quantum dot, surface defects of the cesium-
copper-
chlorine quantum dot can be effectively passivated through
silicon oxide coating, the light-emitting
quantum yield of the cesium-copper-chlorine
quantum dot can be increased, and the stability of the
quantum dot can also be improved. The luminous
quantum yield of the
silicon oxide single-coated cesium-copper-
chloride quantum dot film is as high as 76%, and a
white light emitting
diode prepared from the
silicon oxide single-coated cesium-copper-
chloride quantum dot has the advantages of high luminous
color rendering index, proper
color temperature and the like, and is good in stability. The
silicon oxide single-coated cesium-copper-chlorine quantum dot serves as a
light source in
visible light communication, the -3dB bandwidth of the
optical fiber is 420 KHz, and bit loading in an OFDM mode reaches 4 bit / s / Hz. The method has the characteristics of good
repeatability, no requirement for high-temperature and high-pressure conditions, low cost and the like, and is suitable for expanded production.