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Silicon oxide single-coated cesium-copper-chlorine quantum dot, and preparation method and application thereof

A single cesium copper chloride, quantum dot technology, applied in the field of quantum dots, can solve the problems of quantum dot performance impact and other issues

Inactive Publication Date: 2021-07-06
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of precursor hydrolysis, additional water needs to be added to promote the progress of hydrolysis. Therefore, for materials that are very sensitive to water, such as perovskite and perovskite, this method will also be coated at the same time. have a large impact on the performance of quantum dots

Method used

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  • Silicon oxide single-coated cesium-copper-chlorine quantum dot, and preparation method and application thereof
  • Silicon oxide single-coated cesium-copper-chlorine quantum dot, and preparation method and application thereof
  • Silicon oxide single-coated cesium-copper-chlorine quantum dot, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040]Preparation of SiO single-coated cesium copper chloride quantum dots (Cs 3 Cu 2 Cl 5 @SiO X )

[0041] (1) Preparation of cesium oleate precursor solution: 204mg Cs 2 CO 3 and 0.67mL of oleic acid were dissolved in 10mL of octadecene, and after nitrogen degassing for 20min, the temperature was raised to 120°C and kept for 30min to make Cs 2 CO 3 Complete reaction with oleic acid to obtain cesium oleate precursor;

[0042] (2) Preparation of cesium copper chloride quantum dots: add 39.6mg CuCl to 10mL octadecane, degas nitrogen for 20min, then raise the temperature to 120°C, then add 0.5mL oleylamine and 0.5mL oleic acid, and keep at 120°C for 5min Dissolve CuCl completely, then inject 3 mL of the cesium oleate precursor solution prepared in step (1), stir and react for 30 s and immediately put it into an ice bath for rapid cooling to obtain cesium copper chloride quantum dots;

[0043] (3) disperse the cesium copper chloride quantum dot prepared in step (2) in to...

Embodiment 2

[0045] Preparation of SiO single-coated cesium copper chloride quantum dots (Cs 3 Cu 2 Cl 5 @SiO X )

[0046] The difference from Example 1 is that in step (3), 80 μL of tetraethylsilane was added to obtain a reaction solution, and the molar ratio of cesium copper chloride quantum dots to tetraethylsilane in the reaction solution was 1:6.4.

Embodiment 3

[0057] Preparation of white light-emitting diodes (WLEDs) with silicon oxide single-clad cesium copper chloride quantum dots prepared in Example 2

[0058] 1) According to the mass ratio of 1:50, the commercial CaAlSiN 3 :Eu 2+ Mix the red phosphor with A / B glue (the mixing ratio of A / B glue is 1:4), stir for 15 minutes to get a dispersion, drop the dispersion onto a commercial UV chip, and dry it in vacuum at 90°C Cured in the box for 1 hour to obtain a cured chip;

[0059] 2) Dissolve polymethyl methacrylate in toluene at a mass volume ratio of 10:1, stir at 50°C for 2 hours to obtain a polymethyl methacrylate toluene solution, and wrap the silicon oxide prepared in Example 2 in a single Cesium-copper-chloride quantum dots are dispersed in polymethyl methacrylate toluene solution, then drop-coated on the cured chip described in step (1), and dried at 50°C for 15 minutes.

[0060] Figure 7 The electroluminescence and CIE results graphs of WLEDs at different voltages and ...

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Abstract

The invention relates to a silicon oxide single-coated cesium-copper-chlorine quantum dot, and a preparation method and application thereof, and belongs to the technical field of quantum dots. A low-temperature coating technology is utilized, a precursor is utilized to capture water in air at a relatively low temperature, rapid hydrolysis is carried out, silicon oxide successfully coats the surface of the cesium-copper-chlorine quantum dot, surface defects of the cesium-copper-chlorine quantum dot can be effectively passivated through silicon oxide coating, the light-emitting quantum yield of the cesium-copper-chlorine quantum dot can be increased, and the stability of the quantum dot can also be improved. The luminous quantum yield of the silicon oxide single-coated cesium-copper-chloride quantum dot film is as high as 76%, and a white light emitting diode prepared from the silicon oxide single-coated cesium-copper-chloride quantum dot has the advantages of high luminous color rendering index, proper color temperature and the like, and is good in stability. The silicon oxide single-coated cesium-copper-chlorine quantum dot serves as a light source in visible light communication, the -3dB bandwidth of the optical fiber is 420 KHz, and bit loading in an OFDM mode reaches 4 bit / s / Hz. The method has the characteristics of good repeatability, no requirement for high-temperature and high-pressure conditions, low cost and the like, and is suitable for expanded production.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a silicon oxide single-coated cesium-copper-chloride quantum dot and a preparation method and application thereof. Background technique [0002] Non-toxic Cs 3 Cu 2 Cl 5 Due to the easy oxidation of quantum dots, its application in light-emitting devices is seriously restricted. Inorganic oxide coating on the surface of quantum dots is an effective method to improve their stability. Researchers have proposed methods such as physical deposition and precursor hydrolysis to coat quantum dots. Among them, the method of precursor hydrolysis has become one of the main methods of coating due to its advantages of fast coating speed, compact coating layer and no need for vacuum. However, in the method of precursor hydrolysis, additional water needs to be added to promote the progress of hydrolysis. Therefore, for materials that are very sensitive to water, such as pe...

Claims

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Application Information

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IPC IPC(8): C09K11/61C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L33/50
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/025C09K11/616H01L33/504H01L2933/0041Y02B20/00
Inventor 赵双易臧志刚蒋思奇
Owner CHONGQING UNIV
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