40results about How to "Increase the chance of occurrence" patented technology

The invention relates to a molecular detection method for rapidly distinguishing MAT1-1 and MAT1-2 mating types of Chinese caterpillar fungus, comprising two pairs of specific primers (Cm1-F / Cm1-R andCm2-F / Cm2-R) for detecting mating types and two sets of corresponding PCR amplification systems and PCR amplification programs. The primer pair Cm1-F / Cm1-R is used for detecting the MAT1-1 mating type of Chinese caterpillar fungus, and the other primer pair Cm2-F / Cm2-R is used for detecting the MAT1-2 mating type of Chinese caterpillar fungus; and using both pairs of the specific primers and thecorresponding PCR amplification systems and the PCR amplification programs can realize the rapid detection of the mating types of Chinese caterpillar fungus. The detection results of the molecular detection method have high specificity, and the molecular detection method is stable, reliable and rapid and can greatly shorten the time of biological detection. The molecular detection method is suitable for the detection of the mating types of Chinese caterpillar fungus in the relevant professional fields such as production of edible fungi and medicinal fungi, strain breeding, plant protection andthe like as well as the research in the aspects of mating type gene, phylogenetic development and the like, and has significance in researching sexual reproduction of other fungi of cordyceps and directing the production practice.

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.

A non-polarized discharge liquid treating device and treatment are disclosed. Plated electrode (7) and plated electrode (8) are discharging in liquid-phase, gas-liquid phase or gas-liquid mixed phase to realize high-voltage discharging plasma by high-voltage pulse or DC, heat-resistant insulating board (14) with hole (13) focuses electric field to locality, which makes local electric filed a certain height. It can realize plasma discharge, produce shock wave, ultraviolet ray and various active free radicals and remove various pollutants effectively. It's efficient and has no electrode melt.

The invention discloses a method for efficiently inducing jujube tree 2n pollen, which comprises the steps of: with colchicines as mutagen, firstly, cutting a jujube fruit-bearing shoot base part to be induced, covering a wound with absorbent cotton; and secondly, dropping the colchicines medicine liquid into the absorbent cotton to ensure that a jujube fruit-bearing shoot absorbs the medicine liquid into the xylem through the minimally invasive wound and conveys the medicine liquid upwards to stop spindle fibers in the young bud in a process of reductional division of pollen mother cells from forming and induce the pollen chromosome doubling so as to obtain the high-activity 2n pollen. The method is applied to the induction of the jujube high-activity 2n pollen, is simple and convenient, and has high induction efficiency.

The invention relates to a copper-indium-gallium-selenium thin film battery and a preparation method. The copper-indium-gallium-selenium thin film battery comprises a glass substrate, a metal back electrode layer, a light absorption layer, a buffer layer, a barrier layer and a window layer which are sequentially laminated, wherein the surface of each of the glass substrate, the metal back electrode layer, the light absorption layer, the buffer layer, the barrier layer and the window layer has suede with the same roughness. The surface of the glass substrate of the copper-indium-gallium-selenium thin film battery has the suede, and the grown thin film battery has an uneven surface, thereby functioning in trapping light. When sunlight is incident, the incident sunlight may form a certain angle with the surface of the battery due to the existence of the suede structure to further increase the probability of generating the photon-generated carriers in P-N junction areas and finally increase photo-generated current.

The invention provides a two-sided welding method for a U-shaped ribbed slab unit welding seam. The two-sided welding method comprises the following steps: cleaning the welding surface of a piece to be welded; placing a U-shaped rib on the surface of the piece to be welded, wherein an assembly groove is formed between the end part of a U-shaped ribbed web plate and the surface of the piece to be welded, and the groove angle is 50-60 degrees; carrying out positioning welding on the U-shaped rib and the piece to be welded in the horizontal position to obtain a U-shaped ribbed slab unit; welding a fillet welding seam at the jointing position of the inner side of the U-shaped ribbed web plate and the piece to be welded; and placing the U-shaped ribbed slab unit welded with the fillet welding seam on an anti-deformation slanting tension bed to carry out welding of an outer side welding seam, wherein a process of twin-wire submerged arc welding with single power supply is adopted. According to the two-sided welding method, a jointing welding seam between the U-shaped rib and the piece to be welded is changed into a two-sided fillet welding seam form from a single-sided fillet welding seam form in the prior art, so that stress amplitudes at a weld root and a weld toe are greatly lowered, the problem of initiation of fatigue cracks of the welding seam at the weld root is solved, and the fatigue performance at the weld toe is also improved.

The invention discloses a cement reinforcing agent, a preparation method, and application thereof. The cement reinforcing agent is synthesized by using an amino silane coupling agent for modifying a wet-process-produced white carbon black product through a chemical coupling reaction. Relative to 100 parts by weight of wet-process white carbon black, the chemical modification process needs 500-1300 parts by weight of deionized water, 1-15 parts of a silane coupling modifier, 1-2 parts of an anionic surfactant, and 10-30 parts of an organic solvent. A national standard GB / T17671-1999 method is employed, the addition amount of the product is only 1.0-2.0 parts relative to the cement mass, and compared with 7-day strength of black cement, the strength is improved by about 30 times.

The invention discloses a 'cactus' micro / nanometer secondary surface array structure, a preparation method and application of the 'cactus' micro / nanometer secondary surface array structure. The micro / nanometer secondary surface array is formed in the manner that nanoscale copper 2 sulphur (Cu2S) nanometer lines grow on the surface of micron scale Cu2S spherical crowns, and the Cu2S spherical crowns are periodically distributed on the surface of a substrate. Compared with a common plane nanometer line array, the Cu2S'cactus' micro / nanometer secondary surface array further increases specific surface area, and increases probability of generation of charge carriers. Meanwhile, when the angle of incident light changes, change of relative position between the nanometer lines and light rays is small, and change of light absorption is small, so the light absorption can maintain good performance within the wide light incident angle. When the Cu2S'cactus' micro / nanometer secondary surface array is applied to the field of solar energy, the Cu2S'cactus' micro / nanometer secondary surface array can overcome the defects of degrading the performance along with the position of the sun, or changing angles of devices continuously along with the change of illumination angles to cause complexity of structure of the devices and increase of cost.

The invention belongs to the technical field of solar photovoltaic cells, and particularly relates to a thin-film solar cell with a micron-nanometer two-stage array structure and a manufacturing method of the thin-film solar cell. The thin-film solar cell comprises a substrate, wherein a back electrode, a p-type semiconductor micron-nanometer two-stage array, an n-type semiconductor layer, a window layer and a metal grid electrode are sequentially arranged on the substrate. An absorbing layer of the thin-film solar cell with the micron-nanometer two-stage array structure is manufactured on the basis of a Cu2S micron-nanometer two-stage array through the chemical bath deposition technology, and the manufacturing method is simple; compared with a method that high vacuum conditions or high temperature conditions are needed for manufacturing the absorbing layer, the manufacturing method has the advantages that the cost is low, the requirements for equipment are low, reactants are easy to obtain, the preparation temperature is low, reaction conditions are easy to control, and the manufacturing method can be conveniently and widely applied.

The invention provides a method for controlling orientation of electrodeformation of a ferroelectric single crystal. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal comprises the following steps: bevelling (001) surface of a trigonal ferroelectric single crystal, so as to obtain bevelled single crystal; and initially polarizing the bevelled single crystal in the presence of an external electric field, and then polarizing in the presence of an external reverse electric field, so as to obtain reversely polarized single crystal. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that the (001) surface of the trigonal ferroelectric single crystal is treated by adopting a bevelling way, so that the surface of the single crystal is not strict (001) in orientation, and ratio of polarization overturn at 109 degrees can be increased when an electric field is turned over up and down. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that a simple bevelling technology is carried out on a (001)-oriented trigonal ferroelectric single crystal, so that surface normal and a crystal axis are not coincided, symmetry about the surface normal in spontaneous polarization direction is destroyed, and occurrence probability of 109-degree polarization overturn is improved, so that control on the orientation of the electrodeformation is realized. The method for controlling the orientation of the electrodeformation of the ferroelectric single crystal has the advantages that warming-assisted polarization is preferred, a single 109-degree domain rotation path can be realized, and an application of ferromagnetic thin film / piezoelectric single crystal heterojunction equal strain regulation is facilitated.

The invention discloses an ultra-thick coating hot galvanized steel strip for an underground pipe gallery corrugated pipe and a production method thereof. The hot galvanized steel strip comprises thefollowing chemical components of, in percentage by mass, 0.045%-0.065% of C, 0.15%-0.25% of Mn, less than or equal to 0.020% of S, less than or equal to 0.020% of P, less than or equal to 0.03% of Si,greater than or equal to 0.020% of Als, and balance iron and inevitable impurities; the production method comprises converter smelting, LF refining, continuous casting , hot rolling, cold rolling andgalvanizing processes. According to the ultra-thick coating hot galvanized steel strip for the underground pipe gallery corrugated pipe and the production method thereof, proper mechanical propertiesof the steel strip are guaranteed through reasonable component design and hot rolling and galvanizing annealing process design; and through reducing the height of an air knife, increasing the distance between a knife lip and the strip steel and sectional control measures of the opening degree of the air knife lip, the generation of zinc rhyolite and edge thickness defects is inhibited, the requirement of the underground pipe gallery industry on the ultra-thick coating hot galvanized steel strip is met, and remarkable economic benefits are achieved.

The invention relates to a dwarf peony 2n pollen inducing method which includes the steps: selecting flower buds of 10-20 perennial healthy and strong dwarf peony plants in a red appearing period; disinfecting the flower buds at 7-8 o'clock in the morning and then injecting 5-7g / L dimethyl sulfoxide and 20-30g / L colchicine into the disinfected flower buds by a syringe once a day in three continuous days; sealing a needle hole by paraffin after pulling out the syringe every time. The inducing method is applied to induction of high-activity dwarf peony 2n pollen, simple, convenient and high in inducing efficiency.

The invention discloses a CIGS nanostructure thin-film photovoltaic battery and a preparation method thereof. The method is on the basis of cuprous sulfide or copper sulphide nanowire array prepared by gas solid reaction method, and combines electrochemical deposition method and heat treatment. Components, phase structure and band structure of the nanowire array in a semiconductor can be changed by changing sediment method, ion kinds in an electrolyte, sequences of ion deposition and post treatment in electrochemical deposition, thereby nanowire array solar energy photovoltaic battery of different components is prepared. The battery can reduce reflection of light, increase absorption of light, and simultaneously increase probability of generation of carriers, and reduce probability of recombination of cavities and electrons, realizing great enhancement of the photoelectric conversion efficiency. The preparation method in the invention has the advantages of simple method, low cost and low requirements of equipments, and the method is capable of being applied to large areas conveniently, the photoelectric conversion efficiency of the prepared nanostructure thin-film photovoltaic battery is relatively high.

The invention relates to a method for separating enriched palladium by adopting supermolecule secondary spherical coordination identification. The method adopts the technical scheme as follows: taking a certain amount of sample solution containing palladium, adding an alcoholic solution of protonized dibenzyl amine to the sample solution containing palladium, adding acid to the mixture, standing the new mixture for 5 hours to 24 hours, filtering the new mixture to obtain solid complexes, drying the obtained solid complexes, dissolving the obtained solid complexes with ammonia, extracting the obtained solid complexes with inert organic solvent to separate organic phases; and taking a water phase as a solution for extracting the palladium, wherein the alcoholic solution can be ethanol, tert-butyl alcohol, n-propanol, isopropyl alcohol, carbinol, n-butyl alcohol, isobutyl alcohol or glycol, the acid can be hydrochloric acid, sulphuric acid, nitric acid, acetic acid, p-toluene sulfonic acid, benzene sulfonic acid and trifluoroacetic acid or the mixture of some of the same, and the inert organic solvent can be nitrobenzene, bromobenzene, chlorobenzene, petroleum ether, chloroform, paraffinic oil, coal oil, methylene dichloride, benzene, toluene or dimethylbenzene or the mixture of some of the same. With the method, the palladium can be rapidly separated from other base metals with high efficiency and high selectivity.

The invention discloses an Al2O3-Ag@TiO2 nanorod photoanode composite material and a preparation method thereof. The composite material is composed of a titanium dioxide nanorod array modified by Ag particles and coated by an Al2O3 film, wherein the thickness of the Al2O3 film is 5-50nm; and the Al2O3-Ag@TiO2 nanorod photoanode composite material is prepared through the steps of 1) preparation ofthe TiO2 nanorod array, 2) preparation of Ag particles, and 3) preparation of the Al2O3 film. Through the TiO2 nanorod array passivated by the array atomic layer deposition Al2O3 film and modified bythe Ag particles, and through combination of a passivation technique and a sensitization technique, the simple method improves photoelectric conversion efficiency of the TiO2 nanorod array, and thus the TiO2 nanorod array has higher photoelectric conversion efficiency.

The invention discloses an ultra-thick coated hot-dip galvanized steel strip for corrugated pipes of an underground pipe gallery and a production method thereof. The chemical composition and mass percentage of the hot-dip galvanized steel strip are: C: 0.045-0.065%, Mn : 0.15~0.25%, S≤0.020%, P≤0.020%, Si≤0.03%, Als≥0.020%, the rest is iron and unavoidable impurities; the production methods include converter smelting, LF refining, continuous casting, thermal Rolling, cold rolling and galvanizing processes. The invention guarantees the appropriate mechanical properties of the steel strip through reasonable composition design and hot rolling and galvanizing annealing process design; and adopts segmental control measures for reducing the height of the air knife, increasing the distance between the knife lip and the strip steel, and the opening degree of the air knife knife lip , suppressing the generation of zinc flow marks and edge thickness defects, meeting the needs of the underground pipe gallery industry for ultra-thick coated hot-dip galvanized steel strips, and having significant economic benefits.

The invention relates to a copper-indium-gallium-selenium thin film battery and a preparation method. The copper-indium-gallium-selenium thin film battery comprises a glass substrate, a metal back electrode layer, a light absorption layer, a buffer layer, a barrier layer and a window layer which are sequentially laminated, wherein the surface of each of the glass substrate, the metal back electrode layer, the light absorption layer, the buffer layer, the barrier layer and the window layer has suede with the same roughness. The surface of the glass substrate of the copper-indium-gallium-selenium thin film battery has the suede, and the grown thin film battery has an uneven surface, thereby functioning in trapping light. When sunlight is incident, the incident sunlight may form a certain angle with the surface of the battery due to the existence of the suede structure to further increase the probability of generating the photon-generated carriers in P-N junction areas and finally increase photo-generated current.

The invention relates to porcelain, in particular to a preparation method of Ge porcelain, comprising the steps: preparing glaze material: according to parts by weight, comprising 200-500 parts of Baoxi Wutou glaze earth, 70-100 parts of quartz powder, 20-50 parts of Mudaikou purple clay, 180-230 parts of limestone, 150-200 parts of potassium feldspar, 100-170 parts of kaolin and 80-100 parts of talcum powder, ball-milling to obtain powder 120-200 in mesh; preparing a clay base, forming a porcelain base, drying, biscuiting, applying inner and outer glaze, and burning the glaze to obtain a finished product. The method is characterized in that the glaze material in step 1 also comprises 1-100 parts of graphene and 1-100 parts of dysprosium oxide.

The invention belongs to the field of lithium ion battery material preparation, in particular to a preparation method of a high-density ternary composite material. A manufacture process comprise thatfollowing steps: At first, that nano cobalt salt and the nano manganese salt are deposited on the surface of the nickel salt as a core by a gas atomization method to obtain a composite body, Then it is added to the ball mill containing alkaline solution and ball milled, then lithium salt is added to ball milled, sintered, and finally carbon-nitrogen material is deposited on the surface of the ballmill by chemical vapor deposition method, and finally the ternary composite material with carbon-nitrogen substance on the surface is obtained. As the ternary composite material prepared by the invention adopts the twice vapor deposition method, the contact area between the materials is increased, the porosity is reduced, the vibrating density of the material is improved, the probability of the nickel material directly contacting with the electrolyte and the outside is reduced, and the cycle performance is improved.

The invention discloses a method for simply and efficiently inducing jujube 2n pollen based on a stem dripping technology. The method comprises the following steps of: drilling bases of stems of a jujube tree by using colchicines as a mutagenic agent at an exuberant meiosis stage of jujube pollen mother cells; and directly dripping the colchicines to the stems, so that medicine liquor is upwards transported by the xylems, and spindle fibers are prevented from being generated in the reduction mitosis process of the pollen mother cells so as to induce the pollen chromosome to be doubled to obtain the 2n pollen. The method provided by the invention is applied to introducing the 2n pollen; the introducing time is easily grasped, and the 2n pollen introducing can be carried out on a plurality of jujube trees within one year; and the high-proportion 2n pollen is obtained to quicken the sexual polyploidization breeding process of the jujube trees.