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Copper-indium-gallium-selenium thin film battery with suede and preparation method

A thin-film battery, copper indium gallium selenide technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve problems such as unsatisfactory light transmittance and unfavorable light-trapping surface structure

Active Publication Date: 2012-11-21
汉摩尼(江苏)光电科技有限公司
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Problems solved by technology

[0003] The traditional method is to use the surface of frosted glass as the light-trapping surface. However, the unevenness of the surface of the traditional frosted glass is much larger than the film thickness of the thin-film solar cell, which is not conducive to the formation of a suitable light-trapping surface structure, and its light transmittance is also low. not ideal

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  • Copper-indium-gallium-selenium thin film battery with suede and preparation method
  • Copper-indium-gallium-selenium thin film battery with suede and preparation method

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Embodiment Construction

[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention.

[0028] see figure 1 , the copper indium gallium selenium thin film battery 100 of an embodiment includes a glass substrate 10 , a metal back electrode layer 20 , a light absorbing layer 30 , a buffer layer 40 , a barrier layer 50 and a window layer 60 . The surfaces of the glass substrate 10 , the metal back electrode layer 20 , the light absorbing layer 30 , the buffer layer 40 , the barrier layer 50 and the window layer 60 are all suede with the same roughness.

[0029] see figure 2 The textured surface 11 on the surface of the glass substrate 10 has a plurality of spherical pits 12, and the ...

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Abstract

The invention relates to a copper-indium-gallium-selenium thin film battery and a preparation method. The copper-indium-gallium-selenium thin film battery comprises a glass substrate, a metal back electrode layer, a light absorption layer, a buffer layer, a barrier layer and a window layer which are sequentially laminated, wherein the surface of each of the glass substrate, the metal back electrode layer, the light absorption layer, the buffer layer, the barrier layer and the window layer has suede with the same roughness. The surface of the glass substrate of the copper-indium-gallium-selenium thin film battery has the suede, and the grown thin film battery has an uneven surface, thereby functioning in trapping light. When sunlight is incident, the incident sunlight may form a certain angle with the surface of the battery due to the existence of the suede structure to further increase the probability of generating the photon-generated carriers in P-N junction areas and finally increase photo-generated current.

Description

【Technical field】 [0001] The invention relates to a copper indium gallium selenium thin film battery with a suede surface and a preparation method thereof. 【Background technique】 [0002] In optoelectronic devices such as copper indium gallium selenide thin film solar cells, light traps are often used to trap light within the active region of the device. The more light captured in the device, the greater the photocurrent generated by the light, and thus the higher the energy conversion efficiency of the device. Therefore, optical trapping is an important issue when trying to improve the conversion efficiency of optoelectronic devices. [0003] The traditional method is to use the surface of frosted glass as the light-trapping surface. However, the unevenness of the surface of the traditional frosted glass is much larger than the film thickness of the thin-film solar cell, which is not conducive to the formation of a suitable light-trapping surface structure, and its light t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/052H01L31/0352H01L31/18H01L31/0236
CPCY02E10/50Y02P70/50
Inventor 李玉飞肖旭东宋秋明杨春雷卢兰兰
Owner 汉摩尼(江苏)光电科技有限公司
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