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Al2O3-Ag@TiO2 nanorod photoanode composite material and preparation method thereof

A composite material and nanorod technology, which is applied in the field of Al2O3-Ag@TiO2 nanorod photoanode composite material and its preparation, can solve the problems of reducing the photoelectric conversion efficiency of solar cells, complicated electron transmission paths, and increasing electronic recombination, etc., to achieve The process is precise and controllable, the separation of photogenerated carriers is promoted, and the preparation circuit is simple.

Active Publication Date: 2019-08-16
ANHUI UNIV OF SCI & TECH
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Problems solved by technology

[0004] However, Ag-modified TiO 2 After TiO 2 The "capture / decapture" phenomenon of electrons caused by defects on the surface and the tortuous and complex electron transport path caused by the disordered structure will still increase the probability of recombination of electrons and holes during transport; The high fixed charge density will lead to parasitic capacitance effect, which will reduce the photoelectric conversion efficiency of solar cells

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  • Al2O3-Ag@TiO2 nanorod photoanode composite material and preparation method thereof

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[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0040] The embodiment of the present invention provides an Al 2 o 3 -Ag@TiO 2 Nanorod photoanode composite material, the composite material is made of Al 2 o 3 (thickness is 5-50nm) film coating Ag particles modified titanium dioxide nanorod array assembled.

[0041] a kind of Al 2 o 3 -Ag@TiO 2 A method for preparing a nanorod photoanode composite material, comprising the following steps:

[0042] 1) TiO 2 Nanorod array preparation:

[0043] Add 0.5ml of...

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Abstract

The invention discloses an Al2O3-Ag@TiO2 nanorod photoanode composite material and a preparation method thereof. The composite material is composed of a titanium dioxide nanorod array modified by Ag particles and coated by an Al2O3 film, wherein the thickness of the Al2O3 film is 5-50nm; and the Al2O3-Ag@TiO2 nanorod photoanode composite material is prepared through the steps of 1) preparation ofthe TiO2 nanorod array, 2) preparation of Ag particles, and 3) preparation of the Al2O3 film. Through the TiO2 nanorod array passivated by the array atomic layer deposition Al2O3 film and modified bythe Ag particles, and through combination of a passivation technique and a sensitization technique, the simple method improves photoelectric conversion efficiency of the TiO2 nanorod array, and thus the TiO2 nanorod array has higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemistry, in particular to an Al 2 o 3 -Ag@TiO 2 Nanorod photoanode composite material and preparation method thereof. Background technique [0002] Titanium dioxide (TiO 2 ) are widely used in photocatalysis, electrochemistry, environmental purification and photovoltaics due to their excellent optical properties and chemical stability. Titanium dioxide nanorods (TiO 2 Nanorods) arrays have the characteristics of simple synthesis and small boundary resistance, which can provide direct transport channels for photogenerated carriers, effectively promote their transport and transfer, and improve photoelectric conversion efficiency, thus gaining more attention in the field of photoelectrochemistry. . [0003] However, TiO 2 The wide bandgap (~3.2eV) makes it only have a strong absorption of energy near ultraviolet light, which limits its utilization of visible light; in addition, the rapid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042B82Y30/00
CPCB82Y30/00H01G9/2036Y02E10/542
Inventor 高娟查婷玉孙小卫王艳芬倪晋波
Owner ANHUI UNIV OF SCI & TECH
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