Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CIGS nanostructure thin-film photovoltaic battery and preparation method thereof

A technology of thin-film photovoltaic cells and nanostructures, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of film crystallinity, easy introduction of impurities, and low production costs. It achieves uniform distribution, low equipment requirements, and low cost effect

Inactive Publication Date: 2012-08-08
SUN YAT SEN UNIV
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Chinese patent CN 101471394A discloses a method for preparing a light-absorbing layer of a copper indium gallium sulfur selenide thin film solar cell. The method uses a non-vacuum liquid phase chemical method to prepare a copper indium gallium selenide sulfur thin film. The preparation process is simple, the cost is low, and the equipment investment is small. High utilization rate, strong controllability, good repeatability, easy to realize large-area, high-quality film preparation and large-scale production, but it is necessary to add a variety of solution regulators during the preparation process, which is easy to introduce impurities and affect the crystallization of the film sex has an impact
Although there are a variety of nanowire solar cells prepared by Au particle catalysis and electrochemical methods using templates, there is no method that is simple in process, low in fabrication cost, and can be used for the preparation of large-area nanowire solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CIGS nanostructure thin-film photovoltaic battery and preparation method thereof
  • CIGS nanostructure thin-film photovoltaic battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A CIGS nanostructure thin film photovoltaic cell is prepared by the following steps:

[0043] (1) Polish the copper sheet with No. 0-6 sandpaper, and ultrasonically clean it with alcohol, acetone, and deionized water for 5 minutes; then deposit (magnetron sputtering) a layer of Mo on the copper sheet, and the thickness of Mo is 800nm;

[0044] (2) sputtering a layer of copper film with a thickness of 1um on the copper sheet deposited with the Mo layer;

[0045] (3) Mix the product of step (2) with hydrogen sulfide / oxygen mixed gas (the volume ratio of the two is 1:2), and heat at 20°C for 16h to generate copper sulfide nanowires;

[0046] (4) putting the copper sulfide nanowire into 1mol / L dilute hydrochloric acid to dissolve the surface oxide layer;

[0047] (5) The product of step (4) is used as the working electrode, the platinum wire is used as the counter electrode, the reference electrode is selected from SCE, and the acidic solution containing indium chloride is...

Embodiment 2

[0054] A CIGS nanostructure thin film photovoltaic cell is prepared by the following steps:

[0055] (1) The glass sheet is ultrasonically cleaned with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water in sequence, and then thermally evaporates a layer of Mo on the glass sheet, and the thickness of Mo is 800nm;

[0056] (2) Thermal evaporation of a layer of copper film with a thickness of 1um on the substrate after thermal evaporation of Mo;

[0057] (3) Mix the product of step (2) with hydrogen sulfide / oxygen mixed gas (the volume ratio of the two is 1:2), and heat at 10° C. for 18 hours to grow cuprous sulfide nanowires;

[0058] (4) putting the cuprous sulfide nanowire into 1mol / L dilute hydrochloric acid to dissolve the surface oxide layer;

[0059] (5) the product of step (4) is carried out chemical bath in the mixed solution of ammonium chloride, cadmium chloride, ammoniacal liquor and thiourea, deposits cadmium sulfide shell layer, and thickness i...

Embodiment 3

[0065] A CIGS nanostructure thin film photovoltaic cell is prepared by the following steps:

[0066] (1) The silicon wafer is ultrasonically cleaned with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water in sequence; then deposit (magnetron sputtering) a layer of Mo on the silicon wafer, the thickness of Mo 800nm;

[0067] (2) sputtering a layer of copper film with a thickness of 1um on the substrate after depositing Mo;

[0068] (3) Mix the product of step (2) with hydrogen sulfide / oxygen mixed gas (the volume ratio of the two is 1:2), and heat at 18° C. for 12 hours to grow cuprous sulfide nanowires;

[0069] (4) putting the cuprous sulfide nanowire into 1mol / L dilute hydrochloric acid to dissolve the surface oxide layer;

[0070] (5) the product of step (4) is used as a working electrode, the counter electrode is a platinum wire, and the working electrode is SCE, and the acidic solution containing indium chloride, gallium chloride and selenous acid i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a CIGS nanostructure thin-film photovoltaic battery and a preparation method thereof. The method is on the basis of cuprous sulfide or copper sulphide nanowire array prepared by gas solid reaction method, and combines electrochemical deposition method and heat treatment. Components, phase structure and band structure of the nanowire array in a semiconductor can be changed by changing sediment method, ion kinds in an electrolyte, sequences of ion deposition and post treatment in electrochemical deposition, thereby nanowire array solar energy photovoltaic battery of different components is prepared. The battery can reduce reflection of light, increase absorption of light, and simultaneously increase probability of generation of carriers, and reduce probability of recombination of cavities and electrons, realizing great enhancement of the photoelectric conversion efficiency. The preparation method in the invention has the advantages of simple method, low cost and low requirements of equipments, and the method is capable of being applied to large areas conveniently, the photoelectric conversion efficiency of the prepared nanostructure thin-film photovoltaic battery is relatively high.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic cells, and in particular relates to a CIGS nanostructure thin film photovoltaic cell and its preparation method and application. Background technique [0002] Solar cells can convert renewable solar energy into non-polluting electrical energy, which is a topic that has attracted more attention in the development and utilization of solar energy. At present, the solar cell materials that have been studied more include monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, cadmium sulfide, cadmium tellurium, copper indium sulfur, copper indium gallium selenide, copper indium gallium selenide sulfur and other types. With people's high requirements for the photoelectric conversion efficiency of solar cells and the development of nanotechnology, more and more people have begun to use the above materials to make thin-film solar cells, nanowire solar cells, and nanorod sol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18
CPCY02P70/50
Inventor 任山李立强刘珠凤李明洪澜
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products