94 results about "Gallium chloride" patented technology

In a creation section of GaN crystal nuclei, a gallium vapor and an ammonia gas are chemically reacted to create GaN crystal nuclei, which are transported into a growth section of GaN powders with a nitrogen carrier gas. In the growth section of GaN powders, a gallium chloride created in a pre-reactor is chemically reacted with the ammonia gas transported from the creation section of GaN crystal nuclei on the GaN crystal nuclei, to produce GaN powders through the crystal growth.

The invention discloses an electro-deposition method for preparing the three band gap Fe-doped with copper gallium sulfur solar cell materials. The method includes the following steps: dissolving the copper chloride, the gallium chloride and the ferric chloride in the ionic liquid, depositing the Cu, Ga and Fe prefabricated layers on the constant potential of the substrate, conducting the vulcanization annealing treatment on the prefabricated layers, and finally preparing the Fe-doped with copper gallium sulfur thin film materials. The electro-deposition method for preparing the three band gap Fe-doped with copper gallium sulfur solar cell materials can effectively reduce the adverse effect of the hydrogen evolution reaction on the quality of the thin film due to the fact that the ionic liquid is used as the solvent, simple in preparation technology, high in utilization rate of raw materials, low in production cost, strong in controllability, good in repeatability, capable of realizing the preparation of the large-area high-quality thin film and large-scale production, good in crystallinity, compact and flat in surface topography, and capable of broadening the absorption of the solar energy spectral by the materials through the generated sub-band gap and obviously increasing the photo-generated current of materials.

The invention relates to a preparation method of hydroxyl gallium oxide nanometer crystal, and belongs to the technical field of preparation of a nanometer material of oxyhydroxide. The preparation method comprises the following steps of: dripping a deionized water solution of CTAB (cetyltrimethyl ammonium bromide) into a benzene solution of gallium chloride under an ultrasonic environment by the adoption of a principle of a liquid-liquid interface reaction, putting the mixed solution into a reaction kettle to carrying out heating reaction, and obtaining a sample of white powders. The hydroxyl gallium oxide is the raw material for compounding gallium nitride and gallium oxide, and the microcosmic morphological feature of the hydroxyl gallium oxide has very important influence on the performances of the prepared gallium nitride and gallium oxide. The hydroxyl gallium oxide nanometer crystal, prepared by the method provided by the invention, is prism-shaped, and has the characteristics of smooth surface, complete shape, uniform size, etc. The preparation method, provided by the invention, conquers the shortcomings that gallium chloride is very easy to absorb water and cause deliquescence, and abandons the complicated step that the pH value must be regulated in the past and does not need the vacuum environment; and has the advantages of simplicity in operation, high yield, little energy consumption, high repeatability and the like.

The invention relates to a method for electrodepositing gallium at low temperature by using an ionic liquid, which comprises the following steps: heating an ionic liquid used as an electrolyte to a colorless transparent state, dissolving gallium chloride in the ionic liquid, and electrodepositing the gallium chloride in the solution, wherein gallium is generated at the cathode of the electrolytic bath, and chlorine gas is emitted at the anode. In the electrodeposition process, the bath voltage of the electrolytic bath is higher than the decomposition voltage of gallium chloride, and lower than that of the electrochemical window of the ionic liquid. The invention has the advantages of low operating temperature, low energy consumption and low apparatus corrosiveness, can greatly lower the production cost, and is environment-friendly.

The invention provides a method for recycling gallium from indissolvable gallium compounds and gallium recycled by virtue of the method. The method comprises the steps of mixing waste containing the indissolvable gallium compounds with a chlorinating agent, sintering, leaching a sintered product, and carrying out electrolysis, so as to obtain metal gallium. According to the method, the waste containing the indissolvable gallium compounds is mixed with the chlorinating agent and is sintered, and the difficulty-leached gallium compounds are converted into easily-leached gallium chloride, so thatthe leaching rate of gallium is greatly increased, the recycling rate of gallium reaches 98% or above, and the purity of metal gallium can reach 99.9wt%. The process flow is simple, the consumed timeis relatively short, the waste gas and the dust which are harmful to the environment are not discharged, and the method has wide industrial application prospects.

The invention provides a preparation method of high-purity and low-loss chalcogenide glass, belonging to a preparation method of the chalcogenide glass. The preparation method comprises the following steps of: removing hydrocarbon impurity in the glass by taking ultra-dry gallium chloride as a purifying agent, and distilling and purifying the glass in combination with the conventional deoxidant, aluminum, magnesium or zirconium metal; placing glass mixture into a quartz ampoule to be sealed in by means of vacuum supply, founding the glass mixture in a vacuum ampoule, dynamically distilling the glass, and remelting the mixture after distilling; and effectively removing the hydrocarbon impurity in the glass by taking the ultra-dry gallium chloride as the purifying agent, so that the Mie scattering imperfection is hardly formed in the finally-obtained high-purity chalcogenide glass, and the low-loss homogeneous glass can be obtained. According to the high-purity chalcogenide glass synthesized by the preparation method provided by the invention, the minimum loss under the infrared transmission waveband is less than 0.3dB / m, and the corresponding loss of the absorption peak of the residual impurity is less than 8dB / m, so that the preparation method can be used in the field of an infrared glass optical element and an infrared optical fiber. The ultra-dry gallium chloride purifying agent can be easily obtained, and is lower in price; the carbon, hydrogen and oxygen impurities can be removed from the chalcogenide glass at high efficiency; the prepared chalcogenide glass is better in uniformity and less in light scattering.

The invention relates to a method for preparing high viscosity lubricating oil. A catalyst system consisting of acid ion liquid as a main catalyst and stannic chloride, iron chloride, gallium chloride or alkylaluminium halide as cocatalysts contacts 1-olefin under oligomerization condition to perform polyreaction. One or more straight-chain 1-olefins of C6-C18 are taken as raw materials to contact the ion liquid and metal halide at a reaction temperature of between 60 DEG C below zero and 180 DEG C and under a reaction pressure of between 0.1 and 10 MPa to obtain a product with the viscosity of between 10 and 1,000 mm.s. The high viscosity poly alpha-olefin can be used as lubricating oil base oil or lubricating oil additive. The catalysts related in the invention can be recycled; and the technological process does not generate pollutants such as waste solvent and the like, so the method is a green lubricating oil synthesizing process.

The invention discloses a method for preparing a copper-gallium-selenium photoelectric thin film from copper chloride and gallium chloride, and belongs to the technical field of preparation of photoelectric thin films for solar cells. The method comprises the following steps: cleaning a glass substrate first, then putting copper chloride, gallium chloride and selenium dioxide into a solvent, adjusting the pH value to 4.0-7.0, spinning the mixture onto the glass substrate to obtain a precursor thin film, drying, putting the precursor thin film into an airtight container containing diamide hydrate which is not in contact with the precursor thin film sample, charging the airtight container filled with the sample into an oven, heating and preserving the heat, finally taking out and drying the sample to obtain the copper-gallium-selenium photoelectric thin film. The method does not need high temperature or high vacuum, and is low in requirement for instruments, low in production cost, high in production efficiency and easy to operate. The copper-gallium-selenium photoelectric thin film has good continuity and uniformity; the main phase is a copper-gallium-selenium phase, and the new process easily controls the component and the structure of the target product, so that a production cost with low cost and capability of realizing industrialization is provided for preparing a high-performance copper-gallium-selenium photoelectric thin film.

The invention discloses a tail gas filter for preparing gallium nitride by hydride or chloride vapor phase epitaxy, which relates to a particle separator special for separating dispersed particles from air and adopting a rigid hollow filter body. The tail gas filter consists of a shell, a plug, a separation net, a screen and a clamp, wherein the shell is a columnar hollow water jacket; the plug is a sphere coiled into a columnar stainless steel net or a stainless steel wire; the separation net is made of stainless steel wires; the screen is a six to ten-layer anticorrosion metal silk screen; the plug is directly placed inside the shell at one end of an air inlet of the filter the separation net is directly placed at the position inside the shell between the plug and the clamp; and the screen is arranged at one end of an air outlet of the filter layer by layer and fixed inside the shell through the clamp. The tail gas filter reduces, even eliminates ammonium chloride dust, gallium vapor and gallium chloride vapor produced during preparing the gallium nitride by the hydride or chloride vapor phase epitaxy, promotes operators, environments and vacuum pumps, and optimizes the production process and the growth quality of the gallium nitride.

The invention discloses a method for preparing gallium trichloride. The method comprises the following steps: adding liquid metal gallium into a reaction kettle, and introducing chlorine into the liquid metal gallium; controlling the temperature of the reaction kettle to be 200-400 DEG C, and obtaining a main product gallium monochloride and a byproduct gallium trichloride after a first preset time period; controlling the temperature of the reaction kettle to be 100-300 DEG C, and obtaining liquid gallium trichloride and gaseous gallium trichloride after a second preset time period; evaporating the obtained gaseous gallium trichloride into a fractionating tube, and performing cooling to enable the gaseous gallium trichloride to become liquid gallium trichloride to flow into a storage device. According to the method for preparing gallium trichloride provided by the invention, by setting reactions of two stages and setting different reaction temperatures of the two stages, the technicalproblem that a large amount of gallium monochloride and chlorine impurities are generated when chlorine is directly introduced into liquid metal gallium for reaction in the prior art can be effectively solved.

The invention relates to a copper indium gallium selenium absorption layer prepared by a non-vacuum method without a selenizing process. The non-vacuum method is characterized by comprising the threetechnological steps of: preparing copper indium gallium selenium colloid, preparing a copper indium gallium selenium precursor film and performing annealing heat treatment. Copper chloride, indium sulfate, gallium chloride and selenium dioxide are utilized as a Cu source, an In source, a Ga source and an Se source and are prepared according to the molar ratio (Cu to In to Ga to Se = 1 to 1.4 to 0.6 to 4); ethyl alcohol is utilized as a solvent; triethanolamine is simultaneously added into to serve as a complexing agent and an adhesive; the materials are stirred for dissolving under a certain temperature until white thick liquid is obtained; the white thick liquid is taken out, volatilized and aged; the white thick liquid is moderately dissolved into the ethyl alcohol and then scrape coatedor dispensed to a substrate; the copper indium gallium selenium absorption layer is obtained after certain-temperature heat treatment. The copper indium gallium selenium absorption layer disclosed bythe invention has the advantages of simple production technology and environmental protection; a flat copper indium gallium selenium film with a completed structure and a forbidden bandwidth of 1.39eV can be obtained without through any refeeding selenizing technology.

A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm−1 to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.

A method for chlorinating and electrolyzing bauxite to prepare alumina and comprehensively utilizing bauxite comprises the following steps: chlorinating and separating chlorite to respectively obtain anhydrous aluminum chloride, anhydrous ferric chloride, silicon tetrachloride, titanium tetrachloride, scandium chloride and gallium chloride; converting the anhydrous aluminum chloride and the anhydrous ferric chloride into an aqueous aluminum chloride solution and an aqueous ferric chloride solution; electrolyzing the corresponding aqueous solutions at a controlled voltage and a controlled current density for a controlled electrolysis time to obtain aluminum hydroxide, ferric hydroxide, hydrogen and chlorine; returning the chlorine to the above chlorination section; calcining the aluminum hydroxide to obtain metallurgical grade / chemical grade alumina; calcining the ferric hydroxide to obtain iron red or other iron-containing products; rectifying and purifying the silicon tetrachloride to generate polysilicon and zinc chloride; refining the titanium tetrachloride to form a sponge titanium raw material; and enriching the scandium chloride in chloride residues to obtain a scandium extraction raw material. The method has the advantages of low cost, cheap and easily available raw materials, simple operating process, high automation degree, high product purity, and realization of recycling of zinc, chlorine and other raw materials.