53results about How to "Increase operating voltage" patented technology

A frequency-voltage mechanism for power management including first and second PLLs, select logic, control logic, and voltage control logic. The first PLL generates a first source clock signal at a first frequency based on a bus clock signal. The second PLL generates a second source clock signal at a second frequency based on a first frequency control signal and the bus clock signal. The select logic selects between the first and second source clock signals to provide a core clock signal based on a select signal. The clock control logic detects power conditions via at least one power sense signal, provides the first frequency control signal according to power conditions, and provides the select signal. The voltage control logic adjusts the operating voltage commensurate with frequency of the core clock signal. Power consumption is dynamically adjusted without undue delay while providing significant power efficiency benefits.

A system includes one or more processor cores, and a voltage regulator that provides an operating voltage to the one or more processor cores in response to receiving a voltage identifier signal that is indicative of the operating voltage. The system also includes a power management unit that may provide a first voltage identifier signal corresponding to a first operating voltage in response to determining that the processor cores are operating in a first operating state in which the one or more processor cores may draw up to a maximum load current. The power management unit may also provide a second voltage identifier signal corresponding to a second operating voltage, which is less than the first operating voltage, in response to determining that the processor cores are operating in a second operating state in which the processor cores are incapable of an increase in load current above a predetermined amount.

A compound represented by Formula 1 and an organic light emitting device including the same:

where Ar is a substituted or unsubstituted C₆-C₂₆ aryl group; X is O, S,

R₁ and R₂ are hydrogen, a halogen, a C₁-C₁₂ alkyl group, a C₆-C₂₆ aryl group, or a substituted group thereof; R₃, R₄, R₅, R₆, R₇ and R₈ are each independently hydrogen or a substituted or unsubstituted C₁-C₁₂ alkyl group; R₉ through R₂₂ are each independently hydrogen, a C₁-C₃₀ alkyl group, a C₁-C₃₀ alkoxy group, a C₆-C₃₀ aryl group, a C₆-C₃₀ arylalkyl group, a C₆-C₃₀ aryloxy group, a C₅-C₃₀ heteroaryl group, a C₅-C₃₀ heteroarylalkyl group, a C₅-C₃₀ heteroaryloxy group, a C₅-C₂₀ cycloalkyl group, a C₅-C₃₀ heterocycloalkyl group, or a substituted group thereof. An organic light emitting device using the compound has low operating voltage, high color purity, and high efficiency.

A carbon fiber cloth for the gas diffusion layer of a fuel battery is characterized in that polyacrylonitrile (PAN) fiber is pre-oxidized at a temperature of 300 DEG C in a pre-oxidizing furnace to obtain the pre-oxidized fiber; the pre-oxidized fiber is prepared into the pre-oxidized fiber cloth with the thickness of 0.60 mm by adopting the conventional process, wherein the longitudinal yarn is formed by double-yarn with a thickness of 0.445 mm to 0.450 mm, and the transverse yarn is formed by double-yarn with a thickness of 0.445 mm to 0.450 mm; and the density of the longitudinal yarn is 15.7 to 17.7 strands / cm, and the density of the transverse yarn is 15.4 strands / cm; and the pre-oxidized fiber cloth is prepared into the carbon fiber cloth by the secondary carbonization, wherein the areal weight is 80 to 170 g/m<2>; the thickness is 0.20 to 0.3 mm; the density is 0.362 to 400 g/cc; the carbon content is 99.5%; the interlayer shearing force is 5.0 mpa; the tensile strength is 192.5; the tensile modulus is 26.6 Mn/cm<2> (msi); the flexure strength is 50 Mpa and the bending modulus is 7.5 Gpa. The prepared carbon fiber cloth is optimized and has a smooth surface.

A body-biased enhanced current mirror reference circuit is disclosed wherein the body bias voltage of a current mirror device is varied to adjust its threshold voltage. Both the drain and body potentials of a replica mirror transistor are controlled to selected values. The drain is set to an expected DC voltage output of an NFET current mirror device. The body potential is set to a maximum desired value to prevent forward biasing of the body-to-diffusion junction(s) of one or more current mirror devices, which is accomplished by a feedback control circuit. A low-frequency, low-precision op amp drives the gate of a replica load device so that the body of the replica NFET current mirror device is set to a maximum bias voltage. The maximum bias voltage is also used to bias the body of a diode connected NMOS reference transistor, so that the current in the NFET current mirror device will be approximately equal to the current in the diode-connected NMOS reference. An auxiliary NFET current mirror device may be added to the body-biased enhanced current mirror circuit with the body connected to ground as in the unmodified current mirror to negate a non-monotonicity of the current output.

A GaN-based semiconductor light-emitting element capable of suppressing the occurrence of piezoelectric spontaneous polarization in the thickness direction of an active layer and reducing the driving voltage of a light-emitting diode is provided. The GaN-based semiconductor light-emitting element has a structure with a first GaN-based compound semiconductor layer 21 having the top face parallel to the a-plane and having a first conductivity type, an active layer 22 having the top face parallel to the a-plane, a second GaN-based compound semiconductor layer 23 having the top face parallel to the a-plane and having a second conductivity type, and a contact layer 24 composed of a GaN-based compound semiconductor and having the top face parallel to the a-plane, stacked in that order. The GaN-based semiconductor light-emitting element further includes a first electrode 25 disposed on the first GaN-based compound semiconductor layer 21 and a second electrode 26 disposed on the contact layer 24.

The negative electrode of an alkaline storage cell contains a rare earth-Mg—Ni hydrogen storage alloy. The rare earth-Mg—Ni hydrogen storage alloy has a composition expressed by a general formula: (A_αLn_1-α)_1-βMg_βNi_γ-δ-εAl_δT_ε wherein A represents one or more elements selected from the group consisting of Pr, Nd, Sm and Gd and including at least Sm, Ln represents at least one element selected from the group consisting of La, Ce, and the like, T represents at least one element selected from the group consisting of V, Nb, and the like, and subscripts α, β, γ, δ and ε represent numerical values which respectively satisfy 0.4≦α, 0.05<β<0.15, 3.0≦γ≦4.2, 0.15≦δ≦0.30 and 0≦ε≦0.20.

The present invention relates to organic light-emitting diodes that include an anode electrode, a transparent cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer is arranged between the anode electrode and the transparent cathode electrode and the organic semiconductor layer includes a first zero-valent metal dopant and a first matrix compound wherein the first matrix comprising at least two phenanthrolinyl groups as well as to a method for manufacturing the same.

Provided is an ESD protection element, in which: LOCOS oxide films are formed at both ends of a gate electrode, and a conductivity type of a diffusion layer formed below one of the LOCOS oxide films which is not located on a drain side is set to a p-type, to thereby limit an amount of a current flowing in a portion below a source-side n-type high concentration diffusion layer, the current being generated due to surface breakdown of a drain. With this structure, even in a case of protecting a high withstanding voltage element, it is possible to easily satisfy a function required for the ESD protection element, the function of being constantly in an off-state during a steady state, while operating, upon application of a surge or noise to a semiconductor device, so as not to reach a breakage of an internal element, discharging a generated large current, and then returning to the off-state again.

The invention provides an overcurrent protection device, which comprises a first electrode, a second electrode and a multi-layer structure, wherein the multi-layer structure comprises a first PTC polymer material layer and a second PTC polymer material layer. The first PTC polymer material layer comprises a first polymer matrix material and a particulate conductive filler dispersed into the first polymer matrix material; and the first polymer matrix material is prepared from a first polymeric composition. The second PTC polymer material layer comprises a second polymer matrix material and a particulate conductive filler dispersed into the second polymer matrix material; and the second polymer matrix material is prepared from a second polymeric composition. One of the first polymeric composition and the second polymeric composition contains polyvinylidene fluoride and polyolefin and the other one contains polyolefin or polyvinylidene fluoride. Due to the multi-layer structure design, the operating temperature and voltage ranges of the overcurrent protection device are wider.

In a method and an apparatus to generate an x-ray image from the focus region of a lithotripter using x-rays that pass through the focus region and device parts of the lithotripter, to control the dose of the x-rays, only an image region of the image field exposed by the x-rays, that lies outside of an area shadowed by these device parts, is evaluated.

The invention relates to a manufacturing method of an air-cooled unit capacity hydrogenerator VPI (Vacuum Pressure Impregnating) stator coil bar. An inner shielding layer on the surface of a wire canreduce an internal local discharge probability of the wire. After the coil bar is bound with a VPI main insulation layer, a straight-line segment is bound in a half-lapping mode with a layer of low-resistance anti-corona material, then VPI of epoxy anhydride resin is carried out, after impregnation is ended, the end part is respectively bound in a half-lapping mode with medium resistance, medium-high resistance and high resistance segments, and the surface of an anti-corona segment of the end part is bound with two layers of additional insulation layers; after an anti-corona layer is processedwell, the coil bar is assembled into a hot-pressing die, pressurization is carried out, and the coil bar is placed into a baking oven to carry out heating, curing and forming; and after the main insulation layer is cured and formed, a protection layer is brushed with a high-resistance anti-corona paint and a surface coating varnish so as to obtain the finished product VPI stator coil bar. The air-cooled unit capacity hydrogenerator VPI stator coil bar has the main technical performance indexes that: (1) a breakdown voltage of the finished product coil bar is greater than or equal to 5.5UN; and (2) an electrical aging resistance experiment of the coil bar shows that the service life under a voltage of 3.0UN is greater than 40H, and the service life under a voltage of 2.0UN is greater than1,100h.

A system on chip (SOC) is provided. The SOC includes a system core logic, a voltage regulator, a clock generator and a system balance circuit. The voltage regulator provides an operating voltage to the system core logic and receives a current setting signal to set the voltage regulator to a low current mode or a high current mode. The clock generator provides a reference clock signal. The system balance circuit receives the reference clock signal to provide the current setting signal to the voltage regulator and provides the system clock signal to the system core logic, wherein the current setting signal is used to set the voltage regulator to the high current mode before the system clock signal is enabled, and set the voltage regulator to the low current mode after the system clock signal is enabled.

An electromagnetic solenoid device (2) for a starter motor includes a first solenoid (SL1) and a second solenoid (SL2). The first solenoid (SL1) includes a first coil (35) which is energized to form a first electromagnet, and a first plunger (36) is attracted by the first electromagnet to move in an inner periphery of the first coil (35) axially. The second solenoid (SL2) includes a second coil (46) which is energized to form a second electromagnet and a second plunger (47) which is attracted by the said second electromagnet to move in an inner periphery of the second coil (46) axially. The first solenoid (SL1) and the second solenoid (SL2) are held in a common switch frame. One movement direction of the first solenoid (SL1) which moves due to the attraction of the first electromagnet and a moving direction of the second solenoid (SL2) which moves due to the attraction of the second electromagnet are set to the same direction. A non-magnetic partition wall portion (75) is located between the first solenoid (SL1) and the second solenoid (SL2) .

The invention relates to an ore furnace electricity-saving method comprising the following steps: a. performing optimum setting to parameters of various types of furnace, the setting also comprising adjusting of the melting chamber diameter, controlling of electrode gaps, therefore, obtaining a practical and scientific configuration of network voltage and the equipment itself; b. improving current work utilization ratio by using a voltage work method and the technical requirement, increasing the ratio of voltage and current, maintaining the ratio of voltage and current at 1:280, reducing the generation of impedance and inductive reactance of ore furnace, and obtaining a power factor over 0.9; c. improving transmission capacity of the short net, namely, increasing the control voltage and reducing the current.By using the method, production energy-consumption can be reduced effectively, the power factor can be improved and the quality of products can also be improved.

The invention discloses a crosslinked polyethylene composite material as well as a preparation method and application thereof, and belongs to the technical field of high-voltage alternating-current cable insulation. The crosslinked polyethylene composite material is prepared from the following components in parts by mass: 100 parts of low-density polyethylene, 1.8 to 2 parts of a cross-linking agent, 0.3 to 0.5 part of an assistant cross-linking agent, 0.2 to 0.3 part of an antioxidant, 2 to 4 parts of nano vinyl polyhedral oligomeric silsesquioxane and 30 to 40 parts of boron nitride, wherein the boron nitride is composed of boron nitride with a micron-scale particle size and boron nitride with a nano-scale particle size, and the mass ratio of the boron nitride with the micron-scale particle size to the boron nitride with the nano-scale particle size is (2-6): 1. According to the crosslinked polyethylene composite material disclosed by the invention, the nano vinyl polyhedral oligomeric silsesquioxane and the boron nitride are taken as additives, so that the insulation and high-voltage alternating current breakdown resistance of the crosslinked polyethylene composite material can be effectively improved.

The invention relates to the field of power semiconductor and power module application, in particular to a high-performance and high-compactness power module. The power module comprises a plastic shell on which a copper bar is formed by injection molding; a current sensor, an insulation substrate and a heat dissipation bottom plate are fixed in the shell; the bottom of the copper bar is combined with a front copper-clad layer of the insulation substrate in an ultrasonic bonding or welding connection mode; and a back copper-clad layer of the insulation substrate is combined with the heat dissipation bottom plate in a welding mode. According to the high-performance and high-compactness power module, the compactness of system application is achieved by integrating the plastic shell with the current sensor; a heat dissipation structure with fin pins is adopted to increase an operation current of the module, thereby improving the electric performance of the module; the compactness and miniaturization design of the power module is realized by adopting internal three-dimensional and laminated busbar arrangement; and meanwhile, the stray inductance of a busbar is reduced through a laminated busbar structure, so that an operation voltage of the power module is increased, and the electric performance of the module is improved.

The present invention discloses a semiconductor device providing a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer. The semiconductor device is capable of reducing element area due to dielectric separation (e.g. oxide), improving operation voltage (e.g. an voltage more than 700V in one embodiment), and providing a great breakdown voltage due to dielectric isolation (e.g. oxide) which is stronger than silicon.

The embodiment of the invention discloses a drive control circuit, a drive control method, a circuit board and an air conditioner, and the drive control circuit is connected with a first power module and a second power module at the two ends of an open winding motor, and the second power module is connected with an energy storage module. The controller sends control signals to the first power module and the second power module according to the electric quantity of the energy storage module to change the working state of the driving control circuit, so that electric energy can flow bidirectionally when the motor runs, the energy storage module can supply power to the open winding motor under the condition of sufficient energy, the running voltage of the motor is improved, and the service life of the motor is prolonged. The operation efficiency of the motor is improved.