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60results about How to "High optical gain" patented technology
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High gain wide range accommodating intraocular lens for implant into the capsular bag
InactiveUS20040148023A1Large range adjustable focal lengthHigh optical gainIntraocular lensFar distanceMuscle contraction
A high gain lens system for implant into the capsular bag after removal of the natural crystalline lens. A preferred embodiment of the invention comprises a combination of a positive or convex lens and a negative or concave lens. These two lenses are spaced from one another and their relative spacing and respective focal lengths determine their combined focal length. When the lens system is inserted into the capsular bag, two opposed haptic flanges on each side, extend toward the inner radial edge of the bag adjacent the ciliary muscles. When the muscles contract, the bag is stretched thereby compressing the haptic flanges together or at least toward one another. This action cause the two lenses to separate further from each other and the increased spacing between the positive and negative lenses shortens the focal length to permit focusing of objects at near distances. On the other hand, when the muscles relax, the bag relaxes also, the haptic flanges separate and the lenses come closer together. The reduced spacing between the positive and negative lenses, increases the focal length to permit focusing of objects at far distances.
Owner:SHU STEPHEN K
High gain wide range accommodating intraocular lens for implant into the capsular bag
InactiveUS6818017B1Large range adjustable focal lengthHigh optical gainIntraocular lensFar distanceMuscle contraction
A high gain lens system for implant into the capsular bag after removal of the natural crystalline lens. A preferred embodiment of the invention comprises a combination of a positive or convex lens and a negative or concave lens. These two lenses are spaced from one another and their relative spacing and respective focal lengths determine their combined focal length. When the lens system is inserted into the capsular bag, two opposed haptic flanges on each side, extend toward the inner radial edge of the bag adjacent the ciliary muscles. When the muscles contract, the bag is stretched thereby compressing the haptic flanges together or at least toward one another. This action cause the two lenses to separate further from each other and the increased spacing between the positive and negative lenses shortens the focal length to permit focusing of objects at near distances. On the other hand, when the muscles relax, the bag relaxes also, the haptic flanges separate and the lenses come closer together. The reduced spacing between the positive and negative lenses, increases the focal length to permit focusing of objects at far distances.
Owner:SHU STEPHEN K
Lead frame, its manufacturing method, and semiconductor light emitting device using the same
InactiveUS20110133232A1Improve cooling effectHigh light reflectivitySolid-state devicesSemiconductor/solid-state device manufacturingLead frameLight emitting device
A lead frame comprises on a same plane, a pad part including an LED chip mounting upper surface A on which at least an LED chip is to be mounted, and a lead part including an electric connection area C in which an electric connection with the LED chip is made. A relationship between an area S1 of the mounting upper surface of the pad part 2 and an area S2 of a radiating lower surface opposite to the mounting upper surface is represented by 0<S1<S2. Side surfaces of the pad part between the mounting upper surface and the radiating lower surface are provided with stepped parts or tapered parts which spread in a direction from the mounting upper surface toward the radiating lower surface and hold a resin-filled during molding.
Owner:TOPPAN PRINTING CO LTD
Photoelectric device and electronic apparatus including the same
ActiveUS20170084761A1Excellent photoelectric conversion characteristicCarrier (charge) transfer characteristicsSolid-state devicesNanoopticsNanostructureElectron
Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.
Owner:SAMSUNG ELECTRONICS CO LTD
Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof
InactiveCN104009393AHigh optical gainReduce lossLaser detailsLaser optical resonator constructionWhispering galleryUltraviolet
The invention discloses an electric pump gallium nitride micro laser capable of achieving single-direction emission and a preparation method of the electric pump gallium nitride micro laser. The method comprises the steps of firstly utilizing silicon-based p-type gallium nitride / quantum well / n-type gallium nitride materials, utilizing the electron beam etching technology and the deep-silicon etching technology for preparing an asymmetric gallium nitride suspension thin film micro-cavity supported by a single cantilever beam, conducting vapor deposition of an Au / Ni electrode on the front face of a wafer, conducting vapor deposition of Au / Ti on the surface of the n-type gallium nitride, adopting the ultrasonic bonding technology, bonding a lead on the surface of the electrode, and finally preparing the complete laser. According to the electric pump gallium nitride micro laser and the preparation method of the electric pump gallium nitride micro laser, a proper current is exerted on the prepared laser, and whispering gallery mode ultraviolet laser with single-direction emission is obtained.
Owner:NANJING UNIV OF POSTS & TELECOMM
Red light semiconductor laser with high reliability
InactiveCN104269741AIncrease the restrictive effectImprove photoelectric conversion efficiencyLaser active region structureElectrical resistance and conductanceUltrasound attenuation
Provided is a red light semiconductor laser with high reliability. The emission wavelength of the red light semiconductor laser with high reliability ranges from 630 nm to 690 nm. The red light semiconductor laser with high reliability structurally comprises a substrate, a lower limiting layer, a lower waveguide layer, a quantum well active area, an upper waveguide layer, an upper limiting layer and an ohmic contact layer from bottom to top in sequence. Doping is carried out on the waveguide layer on the basis of the structure of a traditional semiconductor laser, the active area is separated from a PN junction, the highfield of the PN junction will attract the movable defects of the active area, and therefore the reliability of the laser is improved. Meanwhile, the doping atoms of the upper waveguide layer can prevent the high-doping-density atoms of the upper limiting layer from being diffused to the active area, and the power attenuation of the laser during continuous working is reduced. Due to the fact that doping is carried out on the waveguide layer, the series resistance of the laser is reduced, conversion efficiency is improved, the amount of generated joule heat is reduced, and the reliability of the red light laser during long-term working is further improved.
Owner:Shandong Huaguang Optoelectronics Co. Ltd.
Method for preparing er-doped silicon carbide optical waveguide through ion implantation
InactiveCN103472533AHigh fluorescent luminous efficiencyHighlight GainOptical light guidesConcentration quenchingLight wave
The invention relates to a method for preparing an er-doped silicon carbide optical waveguide through ion implantation. The method sequentially comprises the steps of crystal polishing and cleaning, oxygen ion implantation, annealing, erbium ion implantation and annealing and finally an er-doped silicon carbide waveguide is obtained. The SOI semiconductor technology is adopted in the process that a silicon dioxide lower coating layer of the er-doped silicon carbide optical waveguide is prepared, so that a silicon dioxide buried layer with the stoichiometric ratio is generated, and the refractivity difference value between the silicon dioxide buried layer and an er-doped silicon carbide waveguide core layer is large. In the er-doped silicon carbide waveguide core layer, the concentration of erbium ions accords with Gaussian distribution, the concentration of the erbium ions in the middle of the er-doped silicon carbide waveguide core layer is the highest, the fluorescence radiation efficiency of the erbium irons is effectively improved, and light gain is improved. The depth and the concentration of the implanted erbium ions can be accurately controlled through adjustment of implantation energy and implantation doses and the phenomena that waveguide gain is low due to the ultra-low concentration of the implanted erbium ions and the concentration quenching effect occurs due to the ultra-high concentration of the implanted erbium ions can be avoided.
Owner:SHANDONG JIANZHU UNIV
High-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution
ActiveCN102611000AImprove self-heating effectSimple preparation processLaser detailsSemiconductor lasersNon symmetricDistributed Bragg reflector
In order to solve the problems of high optical field loss on P-type DBR (distributed Bragg reflector) side and restricted conversion efficiency of the existing vertical cavity surface emitting semiconductor laser, the invention relates to a high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution, which belongs to the technical field of semiconductor laser. The high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution comprises, from bottom to top, an N-side electrode, an N-type substrate, an N-type buffer layer, an N-type segmented DBR, an active region, an oxidation confinement layer, a P-type segmented DBR, a P-type cover layer and a P-side electrode, wherein the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the N-type segmented DBR close to the active region is smaller than that of the latter low-refractive index material pairs; and the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the P-type segmented DBR close to the active region is larger than that of the latter low-refractive index material pairs. The high-efficiency vertical cavity surface emitting semiconductor laser provided by the invention has high photoelectrical conversion efficiency, and wide application prospect.
Owner:SUZHOU EVERBRIGHT PHOTONICS CO LTD
Metal wire grating brightness enhance film for display backlight and preparation method for metal wire grating brightness enhance film
InactiveCN105700058AHigh optical gainSimple preparation processVacuum evaporation coatingSputtering coatingGratingMaterial consumption
Owner:WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Modulating retroreflector array using vertical cavity optical amplifiers
InactiveUS20070064296A1Layer is highLower resistanceLaser detailsNon-linear opticsModulating retro-reflectorRetroreflector
A vertical cavity semiconductor optical photoamplifer (VCSOA) is used as a modulating retro-reflector (MRR) as a pixel in an array. The boundary of the cavity in the VCSOA forms a mirror for reflecting an incident light as an amplified output.
Owner:EPITAXIAL TECH
Erbium silicate waveguide amplifier based on on-chip pumping and preparation method thereof
ActiveCN110783805ASmall sizeAchieving Erbium-doped Optical AmplificationActive medium materialWaveguide amplifierGain
The embodiment of the invention provides an erbium silicate waveguide amplifier based on on-chip pumping and a preparation method of the erbium silicate waveguide amplifier. The amplifier comprises asilicon substrate, a DBR bottom reflector, a pump light source, a gain medium layer and a DBR top reflector which are sequentially arranged on a light path, wherein the DBR bottom reflector and the DBR top reflector form a DBR resonant cavity, the pump light source is used for generating pump light through electroluminescence, the transmission direction of the pump light intersects with the transmission direction of the signal light passing through the gain medium layer, and the DBR resonant cavity is used for performing resonance enhancement of the pump light. The erbium silicate waveguide amplifier is advantaged in that by integrating an erbium silicate gain dielectric layer and a III-V group LED active layer, an III-V group semiconductor light source improves electro-optical conversionefficiency, improves light absorption and pumping efficiency of a gain material, introduces a reliable light source device for a silicon photonic system, and provides the high-speed and large-capacityoptical signal amplification basis for an optical amplifier.
Owner:PEKING UNIV
Photoelectric device and electronic apparatus including the same
ActiveUS9812596B2Excellent photoelectric conversion characteristicCarrier (charge) transfer characteristicsSolid-state devicesNanoopticsNanostructureElectric devices
Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.
Owner:SAMSUNG ELECTRONICS CO LTD
On-chip pumping-signal light resonance erbium silicate laser and preparation method thereof
ActiveCN110808534AImprove absorption efficiencyEnhanced resonance strengthLaser detailsLaser optical resonator constructionResonant cavitySignal light
The embodiment of the invention provides an on-chip pumping-signal light resonance erbium silicate laser and a preparation method thereof. The on-chip pumping-signal light resonance erbium silicate laser comprises a laser active region and a mixed resonant cavity, wherein the mixed resonant cavity is loaded on the upper surface of the laser active region; the laser active region is sequentially provided with a silicon substrate layer and a gain dielectric layer from bottom to top; the gain dielectric layer is of a silicon nitride layer and erbium silicate layer alternating structure, and the upper surface and the lower surface of the gain dielectric layer are both silicon nitride layers; the mixed resonant cavity is of a strip-shaped waveguide structure and is used for controlling a lightfield to be transmitted in the laser active region in a waveguide direction and ensuring that pumping light and signal light are subjected to resonance enhancement in the cavity at the same time so asto improve the absorption efficiency of the pumping and the resonance intensity of the signal light. The erbium silicate compound is used as an optical gain material, so that the optical gain of thematerial in unit distance is effectively improved; the transmission loss of the waveguide is reduced; and the strip-loaded resonant cavity waveguide structure is arranged, so that the etching difficulty of the erbium silicate laser resonant cavity is solved, and meanwhile, the laser output characteristic is improved.
Owner:PEKING UNIV
Modulating retroreflector array using vertical cavity optical amplifiers
InactiveUS7339726B2Layer is highLower resistanceLaser detailsNon-linear opticsModulating retro-reflectorRetroreflector
A vertical cavity semiconductor optical photoamplifer (VCSOA) is used as a modulating retro-reflector (MRR) as a pixel in an array. The boundary of the cavity in the VCSOA forms a mirror for reflecting an incident light as an amplified output.
Owner:EPITAXIAL TECH
Ultra-short-focus projection screen
The embodiments of the invention disclose an ultra-short-focus projection screen. A direction from a non-display surface of the ultra-short-focus projection screen to a display surface is taken as a first direction. The ultra-short-focus projection screen includes a total reflection assembly and a projection which are stacked in order along the first direction. The protection assembly includes a substrate layer, a diffusion layer and an atomization layer which are stacked in order along the first direction, wherein a plurality of dispersed first diffusion particles are arranged in the diffusion layer and the atomization layer and the diffusion layer are in direct contact with each other. The ultra-short-focus projection screen provided by the invention can realize a large viewing angle onthe premise that a second type of ultra-short-focus projection screen has a high bright display effect.
Owner:ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL
Preparation process of high-density imbricated module
InactiveCN109728131AImprove power generation efficiencySave spaceFinal product manufacturePhotovoltaic energy generationConductive pastePower flow
The invention discloses a preparation process of a high-density imbricated module. The preparation process comprises the following steps of: preparation of a slice without a main grid cell; preparation of a battery string; preparation of a long string of cells; preparation of an imbricated module; primary EL test; laminated packaging; framing and assembling of the junction box; and secondary LE test. The obtained high-density imbricated module improves the utilization rate of the defective pieces and improves the module power through a mode of reducing the battery area and reducing the currentmismatching loss, the battery pieces are sliced to be connected in series by employing conductive paste to remove the distance between the battery pieces so as to greatly save the assembling space, the innovative electrical design without the main grid is employed to reduce the internal loss of the module, effectively improve the output power of the single module and improve the module conversionefficiency, and therefore, the preparation process of the high-density imbricated module has an considerable competitiveness and is expected to occupy the mainstream position in the market.
Owner:JETION SOLAR HLDG
Intelligent safety lock based on laser identification technology
The invention discloses an intelligent safety lock based on laser identification technology. The intelligent safety lock comprises a laser key for transmitting a laser password signal and a lock cylinder for opening the lock, wherein the laser key comprises a laser transmitting module for transmitting a laser signal, a driving module for driving the laser transmitting module to work, a dynamic coding encryption module for encrypting the laser signal and a transmitting lens for collimating the laser signal, and the lock cylinder comprises a receiving lens for receiving the laser signal, a laser detection module for arranging the received laser signal, a signal identification module for identifying the received laser signal, a dynamic coding decryption module for decoding the received laser signal and a mechanical lock cylinder. The intelligent safety lock is simple in structure, capable of improving the safety of the lock, high in security and uneasy to copy.
Owner:NO 27 RES INST CHINA ELECTRONICS TECH GRP
Optical receiving antenna based on visible light communication
ActiveCN107894656AExpand field of viewHigh optical gainCondensersEnvironmental resistanceSignal-to-noise ratio (imaging)
The invention discloses an optical receiving antenna based on visible light communication. The optical receiving antenna comprises a lens wall compound parabolic concentrator, a hemispherical lens anda reflection cavity. The lens wall compound parabolic concentrator comprises a first inner surface, a first outer surface, a second inner surface and a second outer surface. A cross-section curve ofthe first outer surface satisfies basic characteristics of a cross-section curve of the compound parabolic concentrator. A cross-section curve of the first inner surface is obtained after the cross-section curve of the first outer surface is rotated by an angle [delta]. The second inner surface and the second outer surface are parallel to each other. The reflection cavity is symmetrically disposedto the outer side of the first outer surface. The hemispherical lens includes a spherical surface and a fourth outer surface. The hemispherical lens is disposed below the second outer surface. The optical receiving antenna of the invention has the advantages of large viewing angle, high gain, large received power and signal-to-noise ratio, small spot size, uniform energy distribution and the like, is environmentally friendly and convenient in installation, and can meet the high-speed and stable communication requirements of an indoor visible light communication system.
Owner:FUDAN UNIV
High dispersion, laser protection lens
InactiveUS6344934B1Reduce intensityHigh optical gainStentsDiffusing elementsCamera lensPolycarbonate plastic
A lens includes a medium which absorbs laser radiation that may be harmful to the eye or other high gain optics raising its temperature and thereby changing its index of refraction, adjacent to a medium which does not absorb that radiation thereby providing a spatially fluctuating variation in total phase change, which causes interference and thermal blooming that disperses the radiation sufficiently to lower the intensity at the retinal spot (or optics to be protected) below that which would cause damage. Or, reflective surfaces on absorbing material have the same effect. Volumes which absorb or reflect laser radiation of a given band of frequencies are interspersed with volumes which do not absorb or reflect laser radiation of that given band of frequencies; the second volumes may be non-absorbing and non-reflecting, or may absorb laser radiation of a second band of frequencies. The fluctuation in absorption is small compared to total absorption, thereby to provide elements of radiation having different phases but sufficiently similar intensities. Two (or more) layers of absorbers provide protection from four (or more) bands of frequencies. Lead glass is used, for increased change in index as a function of temperature; and absorbing polycarbonate plastic is used for a lens substrate.
Owner:SMITH DAVID C
High-gain optical receiving antenna for indoor visible light communication
PendingCN110048772AEfficient use ofHigh optical gainClose-range type systemsLensSignal-to-noise ratio (imaging)Light spot
The invention belongs to the technical field of visible light communication, and particularly relates to a high-gain optical receiving antenna for indoor visible light communication. The optical receiving antenna is of a rotary symmetrical structure and comprises a first outer surface, a second outer surface, a first inner surface and a second inner surface. The first outer surface and the first inner surface are rotary curved surfaces with rotary paraboloid condensation characteristics, and a rotary curve of the first inner surface is obtained after the rotary curve of the first outer surfacerotates around a vertex by an angle beta; the second outer surface is a plane, and the second inner surface is a spherical surface with the radius R; the optical field angle of the optical receivingantenna can reach 90 degrees and is increased by about 30 degrees compared with that of a compound parabolic concentrator; the optical gain reaches up to 21.53, the signal to noise ratio of an opticalreceiving end reaches 82.7944 dB or above, and the light spot area can be effectively reduced by 40% or above; the optical receiving antenna is of a non-composite multi-stage structure, is convenientto process and install, is green and environment-friendly, and can meet the communication requirements of an indoor visible light communication system.
Owner:FUDAN UNIV
Optical film and display device
ActiveCN105319626AThe convergence effect of the light output angle decreasesImprove wear resistancePrismsBeam angleDisplay device
The invention provides an optical film and a display device. The optical film comprises a lens layer having a planar structure bottom, and composed of a microlens array, wherein the microlens array comprises a plurality of lens structures arranged in a first direction, and the first direction is parallel with the bottom; and a prism layer arranged on the lens layer distant from the bottom, and composed of a microprism array, wherein the microprism array comprises a plurality of prism structures arranged in the first direction, and the vertex angles of the prism structures are chamferings. The vertical distance between the focus point of a lens structure and the bottom is f; the vertical distance between the extension surface intersecting line of sides of a prism structure and the bottom is H, and f>1 / 2H. According to the invention, the top ends of the prism structures can drop in dark areas, forcing all rays of light to penetrate through the inclined surfaces of the prism structures, thereby avoiding beam angle convergence decrease of the optical film caused by curved top ends, and allowing the optical film to possess higher optical gains as well as greater wearability.
Owner:ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL
Multichannel optical receiving antenna for visible light communication
ActiveCN104020552AMiniaturizationGuaranteed bandwidthClose-range type systemsOptical elementsPhotovoltaic detectorsOptical antenna
The invention provides an optical receiving antenna for visible light communication, which comprises N lens systems. Each lens system comprises a photoelectric detector and four optical surfaces. A first transmission surface receives visible light. A first reflection surface is placed in the transmission optical path of a first transmission lens and reflects visible light which is converged by the first transmission surface to a second reflection surface. After the second reflection surface receives the reflected light of the first reflection surface, the second reflection surface reflects to a second transmission surface. After transmission of the reflected light, the second transmission surface focuses the light to the photoelectric detector on an image surface. Each lens system receives light waves with different wave bands in the visible light. The photoelectric detector in the lens system receives the light wave with a corresponding wave band. The optical receiving antenna of the invention can realize multichannel receiving at the receiving end of the optical antenna, thereby increasing bandwidth. Simultaneously, utilization of a catadioptric off-axis structure reduces system volume and realizes miniaturization of an optical receiving antenna.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY
High light gain penetration reflective plate of liquid crystal display and its producing process
InactiveCN1648733AReduce power consumptionHigh optical gainMirrorsPhotomechanical apparatusLiquid-crystal displayLiquid crystal
The high light gain penetrating and reflecting plate is for LCD comprising one lower plate, one upper plate and one sandwiched liquid crystal layer. The high light gain penetrating and reflecting plate is located in the side of the lower plate with switch element. The high light gain penetrating and reflecting plate includes one light penetrating area, one reflecting area and at least one micro lens, and the micro lens focuses light to the light penetrating area for high light gain.
Owner:WISTRON OPTRONICS CORP
Quantum dot micro laser and preparation method thereof
PendingCN113708220AReduce lossImprove luminous efficiencyLaser detailsLaser active region structureErbium lasersChemistry
The invention discloses a quantum dot micro laser and a preparation method thereof. The quantum dot micro laser adopts a suspended silicon disk structure, and the suspended silicon disk structure comprises a silicon substrate layer, a first silicon dioxide layer, a silicon dioxide pillar layer and a silicon dioxide disk layer which are sequentially arranged from bottom to top, wherein the upper surface of the silicon dioxide disk layer is coated with a quantum dot layer in a suspended manner, and the quantum dot layer is covered with a second silicon dioxide layer. According to the preparation method, a micro-cavity of the suspended silicon disk structure is formed by adopting a photoetching process and an RIE etching process, so that the micro-cavity is annealed at a high temperature, then coated with quantum dots of different sizes in a suspended manner, and evaporated with silicon dioxide. The quantum dot micro laser can obtain white laser, has extremely high optical gain and extremely low loss, is beneficial to integration with optoelectronic devices, and can obtain high light conversion efficiency and low threshold.
Owner:NANJING UNIV OF POSTS & TELECOMM
Nitride mode locking echo wall microlaser and preparation method thereof
ActiveCN106785896AImprove qualityRaise the thresholdLaser detailsLaser optical resonator constructionGold nanorodOptical pumping
The invention discloses a nitride mode locking echo wall microlaser and a preparation method thereof. According to a nitride material on a silicon substrate, an overhead ring-shaped thin film microcavity with a gap is prepared through utilization of a photoetching technology and a deep silicon etching technology; gold nanorods, as semiconductor saturable absorbers, are decorated at the gap of the microcavity; and mode locking echo wall laser for nitride is realized under a suitable optical pumping condition.
Owner:NANJING UNIV OF POSTS & TELECOMM
Approximate two-level quantum system based on dual coupling quantum dots
ActiveCN106848009ARich TunabilityHigh optical gainNanoopticsSemiconductor devicesSemiconductor materialsLevel structure
An approximate two-level quantum system based on dual coupling quantum dots is formed by coupling two quasi-two-dimensional disc-shaped quantum dots with determined distance and equal radiuses. Each quantum dot disclosed by the invention is made of a semiconductor material, an energy state of the quantum dot is in a discrete structure by a quantum size effect, two original basic states are split to two levels by a coupling effect between the quantum dots, and the coupling effects of other levels are far smaller than the coupling effect between the two levels. The approximate two-level quantum system based on the dual coupling quantum dots has the advantages of solid state, small size, simple structure, tunability and relatively large coupling coefficient and the like, and can be used for designing various quantum optical devices, such as a terahertz wave source and a single photon source based on a two-level structure.
Owner:CHINA ACADEMY OF SPACE TECHNOLOGY
Extension developing method for sub-molecule single layer quanta point laser material
InactiveCN100369281CImprove uniformityHighly unifiedLaser detailsSemiconductor lasersProtection layerMolecular beam epitaxial growth
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
GeSn phototransistor based on III-V group material emitter region and manufacturing method thereof
ActiveCN110828603ALarge photocurrent magnificationHigh sensitivityFinal product manufactureSemiconductor devicesLattice mismatchPhysical chemistry
The invention relates to the technical field of semiconductor manufacturing and particularly relates to a GeSn phototransistor based on an III-V group material emitter region and a manufacturing method thereof. The GeSn phototransistor based on the III-V group material emitter region comprises a substrate, and a collector region, an absorption layer, a base region and an emitter region which are sequentially stacked on a surface of the substrate in the direction perpendicular to the substrate, wherein the absorption layer and the base region are made of a Ge1-xSnx material, x is greater than 0and less than 1, the emitter region is made of a III-V group material, the lattice mismatch degree of the III-V group material and the Ge1-xSnx material is smaller than a preset value, and an energyband gap of the III-V group material is larger than that of the Ge1-xSnx material. The GeSn phototransistor is advantaged in that a phototransistor has a large photocurrent amplification multiple andhigh sensitivity, and high optical gain can be realized more easily.
Owner:SHANGHAI IND U TECH RES INST
Low-power AlGaInP red light semiconductor laser with superlattice electron barrier layer and preparation method of low-power AlGaInP red light semiconductor laser
PendingCN114389151ASuppression of electron overflowStress reliefLaser detailsLaser active region structureChemistryRed light
The invention provides a low-power AlGaInP red light semiconductor laser with a superlattice electron barrier layer and a preparation method of the low-power AlGaInP red light semiconductor laser. The laser sequentially comprises a substrate, a buffer layer, a lower transition layer, an Al < 0.5 > In < 0.5 > P lower limiting layer, a lower waveguide layer, a first quantum well, a barrier layer, a second quantum well, an upper waveguide layer, a superlattice structure-first upper limiting layer, a corrosion stop layer, an Al < 0.5 > In < 0.5 > P second upper limiting layer, an upper transition layer and a cap layer from bottom to top. The laser can effectively inhibit electron overflow, relieve stress of an active region and improve the growth quality of a limiting layer material; meanwhile, a high light limiting factor is achieved, the light gain is improved, and the purposes of reducing the threshold current and improving the slope efficiency are achieved, so that the low-power AlGaInP red light laser has low working current, and heat generation is reduced.
Owner:Shandong Huaguang Optoelectronics Co. Ltd.
Optical device with antistatic property
ActiveUS20180030281A1Good optical performanceConvenient and cost-effective assemblyOther chemical processesSynthetic resin layered productsOligomerMonomer
An optical device having a first optical member, a second optical member, and an antistatic layer disposed between the first optical member and the second optical member wherein the antistatic layer contains the reaction product of a mixture comprising at least one polymerizable onium salt having an anion and at least one non-onium polymerizable monomer, oligomer, or polymer.
Owner:3M INNOVATIVE PROPERTIES CO
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