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Metal wire grating brightness enhance film for display backlight and preparation method for metal wire grating brightness enhance film

A technology of metal wire grid and brightness enhancement film, which is applied in the field of metal wire grid brightness enhancement film for display backlight and its preparation, can solve the problems of complex preparation process of brightness enhancement film and the inability of the product to meet the requirements of backlight display, and achieve P-state wear. Increased transmittance, optimized structure, and improved versatility

Inactive Publication Date: 2016-06-22
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The embodiment of the present invention provides a metal wire grid brightness enhancement film for display backlight and its preparation method to solve the technical problems in the prior art that the preparation process of the brightness enhancement film is complicated and the product cannot meet the requirements of backlight display

Method used

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  • Metal wire grating brightness enhance film for display backlight and preparation method for metal wire grating brightness enhance film
  • Metal wire grating brightness enhance film for display backlight and preparation method for metal wire grating brightness enhance film
  • Metal wire grating brightness enhance film for display backlight and preparation method for metal wire grating brightness enhance film

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preparation example Construction

[0032] see figure 2 , figure 2 It is a schematic flow chart of a preferred embodiment of a method for preparing a metal wire grid brightness enhancement film for a display backlight in the present invention, and the method includes but is not limited to the following steps.

[0033] Step S100, coating a photoresist on the surface of the substrate.

[0034] In step S100, firstly, a flexible substrate is selected as the substrate of the metal wire grid, wherein the flexible substrate is usually made of flexible materials such as polymer or PET, which is convenient to be combined with the existing roll-to-roll equipment process, and has many advantages. Good light transmission, can be used for TFT-LCD display. In addition, the photoresist should have low viscosity for easy separation from the roll-to-roll imprint mold, and have good mechanical properties after curing with sufficient support.

[0035] Step S110 , forming a nanometer-sized photoresist grating structure on the ...

Embodiment 1

[0044] A photoresist grating structure with a triangular cross-section is prepared by a roll-to-roll nanoimprinting method, and then metal is deposited on one side of the triangular prism by pointing oblique evaporation. The specific structure is as Figure 4 As shown in (a), the photoresist grating period is about 100-300nm, the grating width is 100-200nm, the grating thickness is 100-200nm, and the thickness of the metal layer is 10-100nm. Figure 5 (a) is a photoresist grating structure with a triangular cross-section through FDTD to simulate the trend curve of Tp and Rs with wavelength, wherein Rs is greater than 0.9, Tp is about 0.7, and the minimum value is T=0.5*0.7*(1+0.9) =66.5%, which is a gain of about 58% relative to common absorbing polarizers (the light transmittance of common absorbing polarizers is about 42%).

Embodiment 2

[0046] A photoresist grating structure with a trapezoidal cross-section is prepared by a roll-to-roll nanoimprinting method, and then metal is deposited on the top surface and one side of the trapezoidal prism by means of directed oblique evaporation. The specific structure is as Figure 4 As shown in (b), the period of the photoresist grating is about 100-300nm, the grating width is 100-200nm, the grating thickness is 100-200nm, and the thickness of the metal layer is 10-100nm. Figure 5 (b) is a photoresist grating structure with a trapezoidal cross-section through FDTD simulation of Tp, Rs variation trend curves with wavelength, wherein Rs is about 0.8, Tp is greater than 0.6, and the minimum value T=0.5*0.6*(1+0.8 )=54%, which is about 29% relative to the gain of ordinary absorbing polarizers.

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Abstract

The invention provides a metal wire grating brightness enhance film for display backlight and a preparation method for the metal wire grating brightness enhance film. The method includes coating the surface of a substrate with a photoresist layer; forming a nanoscale photoresist grating structure on the photoresist layer through a nanometer embossing technique and performing solidifying treatment; and forming metal films on the solidified photoresist grating structure. According to the invention, the nanoscale photoresist grating structure is prepared through the roll-to-roll nanometer embossing technique and then the metal films with different section shapes are formed on the solidified photoresist grating structure, advantages of simple preparation process and low material consumption and cost are achieved. At the same time, the substrate for nanometer embossing is selected for being suitable for preparing the metal wire grating brightness enhance films with multiple complex patterns, so that the technique universality is improved. Besides, the optical gain of a backlight system of a TFT-LCD display device can also be improved. P state penetration rate increase is realized through structural optimization and comparatively high S state reflection rate is kept at the same time.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a metal wire grid brightness enhancement film for a display backlight and a preparation method thereof. Background technique [0002] The use of polarizers is a core technology of TFTLCD display, while the selective transmission, scattering and absorption of the polarization state by traditional absorbing polarizers makes the light transmittance only about 42%, and the backlight utilization rate is greatly reduced. At present, the commonly used method is to add a brightness enhancement film structure between the backlight and the Cell, such as reflective polarized brightness enhancement film DBEF (Dual-BrightnessEnhanceFilm), metal wire grid, etc., where DBEF is a reflective polarizer that selectively reflects the backlight The light of the system prevents it from being absorbed by the lower polarizer of the LCD and can recycle polarized light. However, because the extinction ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/30
CPCG02B5/3058C23C14/042C23C14/046C23C14/20C23C14/225G02F1/133548G02F1/133528G02F1/1368
Inventor 崔宏青查国伟
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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