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Extension developing method for sub-molecule single layer quanta point laser material

A technology of quantum dot materials and growth methods, which is applied in the field of epitaxial growth of submolecular single-layer quantum dot laser materials, can solve problems such as narrow band gap, difficulty in controlling distribution uniformity and density, and disordered quantum dots. sex improvement effect

Inactive Publication Date: 2008-02-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantage of this method is that the shape, size, distribution uniformity and density of quantum dots are difficult to control because the nucleation of quantum dots on the wetting layer is disordered.
However, due to the narrow band gap of In(Ga)As material itself, experiments have shown that it is difficult to grow quantum dots in the 0.92-0.96 micron band on GaAs substrates using SK growth methods

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  • Extension developing method for sub-molecule single layer quanta point laser material
  • Extension developing method for sub-molecule single layer quanta point laser material

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[0059] The present invention will be described in further detail below in conjunction with the accompanying drawings

[0060] FIG. 1 shows the core idea of ​​the present invention, that is, the formation process of epitaxial growth of submolecular monolayer quantum dots. It can be seen from the figure that when the InAs capping layer on GaAs is less than 1ML, under the optimized MBE growth conditions, this layer of InAs film will be transformed into islands with a height of 1ML and distributed on the surface of GaAs in the form of an array (as shown in Figure 1(a)). These InAs islands are covered with a certain thickness of GaAs to make them a flat surface (as shown in Figure 1(b)), and then the second layer of InAs islands and the first layer of InAs islands are grown according to the method of growing the first layer of InAs islands. A vertical coupling self-alignment effect occurs with the second-layer InAs islands (as shown in Fig. 1(c)). Therefore, when the deposition o...

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Abstract

This invention relates to semiconductor laser technique and provides one InGaAs / GaAs submolecule single quantum points extension layer structure, which comprises first layer of GaAs transient layer; second layer of InGaAs submolecule single layer quantum structure and the third layer of GaAs surface protection layer. Through accurate control molecule beam extension growing condition and using submolecule single layer to control quantum points component, extensive thickness, shape structure to realize room temperature PL spectrum of 0.92-0.96 micrometer band.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an epitaxial growth method of a sub-molecular single-layer quantum dot laser material. Background technique [0002] A very important application of semiconductor lasers (LDs) is as a pump source for many solid-state laser gain media. This is because, on the one hand, LDs have significant advantages over conventional flashlamp pump sources. For example, the luminous efficiency of LDs is high, and the wavelength can be precisely aligned with the absorption band of the optical gain medium, resulting in high pumping efficiencies, and electro-optical conversion efficiencies of up to 50% can be achieved using LD-pumped solid-state lasers (DPSLs). Moreover, LD has many advantages such as long service life (more than 10,000 hours), small size, compact structure, low power consumption and easy heat dissipation. On the other hand, DPSL itself also has many superior characte...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01S5/343
Inventor 于理科徐波王占国金鹏赵昶张秀兰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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