Quantum dot micro laser and preparation method thereof

Abstract

The invention discloses a quantum dot micro laser and a preparation method thereof. The quantum dot micro laser adopts a suspended silicon disk structure, and the suspended silicon disk structure comprises a silicon substrate layer, a first silicon dioxide layer, a silicon dioxide pillar layer and a silicon dioxide disk layer which are sequentially arranged from bottom to top, wherein the upper surface of the silicon dioxide disk layer is coated with a quantum dot layer in a suspended manner, and the quantum dot layer is covered with a second silicon dioxide layer. According to the preparation method, a micro-cavity of the suspended silicon disk structure is formed by adopting a photoetching process and an RIE etching process, so that the micro-cavity is annealed at a high temperature, then coated with quantum dots of different sizes in a suspended manner, and evaporated with silicon dioxide. The quantum dot micro laser can obtain white laser, has extremely high optical gain and extremely low loss, is beneficial to integration with optoelectronic devices, and can obtain high light conversion efficiency and low threshold.

Description

Technical field [0001] The present invention relates to a microlaser A quantum dot and a preparation method, belonging to the field of laser technology. Background technique [0002] Semiconductor quantum dot material is an artificial design of new semiconductor materials, carriers move in the three spatial directions is constrained, having strong three-dimensional quantum confinement effect, reflect the significant quantum tunneling, quantum interference , Coulomb blockade and nonlinear optical effects, etc., is the physical basis for a new generation of solid-state quantum devices, there is an extremely important potential applications in nanoelectronics, optoelectronics, and a new generation of ultra large scale integrated circuits. [0003] Currently, the use of a material of a quantum dot laser sources implement white light laser, a white light laser in the conversion process, most of the laser energy is converted into the broad spectrum light, light angle significantly incr...

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Problems solved by technology

[0003] At present, a quantum dot laser source of one material is used to realize white light laser. During the conversion process of white light laser, most of the laser energy is converted into broad-spectrum light, and the luminous angle is significantly increased, which can improve its safety and is more suitable for some civilian applications. Combining quantum dots with microcavity structures can further improve the optical performance of quantum dot lasers, but at present, the surface smoothness of the microcavity structures of this type of quantum dot lasers is not enough, and the structural design of the microcavity also has problems. Insufficient, resulting in large loss of laser, low luminous efficiency of quantum dots

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