40 results about "Quantum dot lasers" patented technology

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Novel articles and methods to fabricate same with self-assembled nanodots and / or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and / or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW / nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.

The invention relates to semiconductor-based, large-area, flexible electronic devices on {110}<100> oriented substrates. Novel articles and methods to fabricate the same resulting in flexible, {110}<100> or 45-degree-rotated {110}<100> oriented, semiconductor-based electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices,, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler. Accordingly, fabricating the DWDM PIC includes a unique III-V to silicon bonding process, which is adapted for its use of SiGe APDs.

The invention discloses a controllable quantum dot array preparing method based on the photo-thermal effect. According to the method, a metal or alloy nanoparticle array serves as a template, the reaction conditions of a quantum dot precursor are controlled through the local surface plasmon thermal effect irritated by a light source, and therefore the preparing site, size and nucleation density ofthe precursor is controlled. The method mainly includes the steps of preprocessing the surface of the substrate, conducting thin-film deposition on surface metal, preparing the metal nanoparticle array, depositing a protecting layer, growing the quantum dot and conducting post-washing on the substrate. The large-area low-cost quantum dot array is prepared through a chemical synthesis method. Themethod can be combined with a semiconductor processing technology, the prepared quantum dot array can be applied for machining and preparing a quantum dot laser device, a single photon light source, asolar cell, a high-efficiency light-emitting diode, a storage and other devices.

A method for preparing a single-mode gallium arsenide-based quantum dot laser, the method comprising: growing a mask thin layer on the P-side of a gallium arsenide-based epitaxial wafer, and performing a standard photolithography on the mask thin layer to produce surface high-order Grating groove; then grow a thin mask layer on the P surface of the epitaxial wafer, and perform standard photolithography twice on the thin mask layer to produce a strip-shaped ridge waveguide; then grow a thin mask layer, and perform standard photolithography three times Form an electrical injection window; perform standard photolithography four times on the P side of the epitaxial wafer and peel off the photoresist to form an ohmic contact electrode on the P side; finally make an ohmic contact electrode on the N-type substrate on the back of the GaAs-based epitaxial wafer, and resist the arsenic Gain-based epitaxial wafers are cleaved into lasers including gain regions and high-order grating regions, and the lasers are packaged. The invention can generate stable single-mode lasing without making small-period gratings and secondary epitaxy through the standard photolithography process, reduces the complexity and cost of the process, and facilitates device preparation and large-scale production.

The invention discloses a millimeter wave generation system and method based on quantum dot lasers. The generation system includes: a radio frequency signal generator for outputting radio frequency signals, a radio frequency power amplifier, and a 180-degree phase-shifting hybrid power splitter for generating InP monolithic integrated quantum dot laser for comb spectral signals, dual-arm Mach-Zehnder modulator, the input end is connected to InP monolithic integrated quantum dot laser for receiving comb spectral signals, the upper electrode and the lower electrode are respectively shifted by 180 degrees The first output terminal and the second output terminal of the phase hybrid power divider are connected to receive two radio frequency signals, and the output terminal is used to output the comb spectrum signal generated by modulation; after photoelectric conversion by the single row carrier photodetector, the output millimeter wave signal.

A preparation method of a GaAs-based quantum dot laser, by growing the N waveguide layer three times, the Ga input of the first N waveguide layer is increased when the second N waveguide layer is grown, and the third N waveguide layer is grown compared to the second N waveguide layer. When the N waveguide layer is reduced, by growing the P waveguide layer three times, the Ga flux of the second P waveguide layer is increased relative to the growth of the first P waveguide layer, and the growth of the third P waveguide layer is relatively lower than that of the second P waveguide layer. , realize the growth of three layers of GaInP stress buffer layers with different flow rates under the quantum dot active area, and grow three layers of GaInP stress buffer layers with different flow rates above the quantum dot active area to reduce the stress caused by restrictive growth , to provide the best growth conditions for the formation of quantum dots, which is conducive to the formation and aggregation density of quantum dots, and through stress release, the laser power can be increased, the threshold current can be reduced, and the quality of quantum dots can be improved.

The invention provides an electric pumping perovskite composite cavity laser, and belongs to the field of quantum dot lasers. The electric pumping perovskite composite cavity laser comprises light-emitting units and insulating micro discs; each light-emitting unit sequentially comprises an N-shaped electrode, an electronic transmission layer, a perovskite quantum dot layer, an electron hole transmission layer and a P-shaped electrode from top to bottom; each insulating micro disc comprises a disc and a lateral grating; the insulating micro discs are embedded between the light-emitting units; and the equivalent refractive index of the insulating micro discs are different from the equivalent refractive index of the light-emitting units. According to the electric pumping perovskite compositecavity laser, by additionally arranging the insulating micro discs with the lateral gratings, echo wall mode resonance is formed between the light-emitting units and the insulating micro discs, and the efficiency of the perovskite laser outer quantum is greatly improved.

The present invention is a device based on a method for generating a broadband noise source based on a quantum dot microcolumn laser, which belongs to the technical field of broadband noise source generation methods; the technical problem to be solved is: to provide a device for generating a broadband noise source based on a quantum dot microcolumn laser Improvement of the method; the technical solution adopted to solve the above technical problems is: prepare a quantum dot microcolumn laser as the first light source; inject the external narrowband optical noise into the prepared quantum dot laser in step 1 to generate a broadband noise signal, and the quantum dot laser After the output optical signal is split by the beam splitter, one optical signal is converted into an electrical signal by the photodetector and then output to the oscilloscope and spectrum analyzer for macroscopic observation, and the other is output to Hanbury-Brown and Tevez interferometry The device performs statistical measurement of microphotons; the invention is applied to signal generation, and the broadband noise signal generated by the invention has the characteristics of high bandwidth and no external cavity period, which improves the security of communication.