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Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots

A technology of epitaxial growth and quantum dots, which is applied to the structure of the active region, ion implantation plating, coating, etc., can solve the problems of poor temperature stability, difficulty in high-density integration, and small effective mass of electrons, so as to improve performance, Enhanced overall performance, threshold current, and improved maximum optical power output

Inactive Publication Date: 2010-01-13
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

Antimonide has become a hot material in the mid-infrared band research in recent years due to its unique narrow band gap and small electronic effective mass. The development of GaAs-based 1.5μm Sb-based quantum dot lasers will replace InP-based material devices and overcome the difficulties of InP-based materials. High-density integration, poor temperature stability and other shortcomings provide a new light source option for optical communication with low price, low power consumption and excellent performance

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  • Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots

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Embodiment Construction

[0011] like figure 1 As shown, the InGaSb columnar quantum dot high-efficiency 1.5μm communication band laser structure includes: n-type GaAs substrate (1), n-type GaAs buffer layer (2), n-type AlSb / GaSb superlattice buffer layer (3), n-type Al 0.9 Ga 0.1 Sb lower confinement layer (4), Al 0.3 Ga 0.7 Sb lower waveguide layer (5), columnar InGaSb quantum dot layer (6), Al0.3Ga0.7Sb upper waveguide layer (7), p-type Al 0.9 Ga 0.1 Sb upper confinement layer (8), p-type GaSb ohmic layer (9). The substrate (1) is the substrate for material epitaxial growth, using a Si-doped GaAs substrate; growing a 0.5 μm GaAs buffer layer (2); growing a 0.2 μm AlSb / GaSb superlattice buffer layer (3); the lower limit is Al with a thickness of 1.2 μm and an Al content of 0.9 0.9 Ga 0.1 Sb layer (4); the lower waveguide layer is Al with a thickness of 0.35 μm and an Al content of 0.3 0.3 Ga 0.7 Sb layer (5); the active region is a columnar InGaSb quantum dot layer (6) grown using 10-15 per...

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Abstract

With specific lattice parameters and energy band structure properties, III-V antimonides show more and more important research value and application value in the aspect of near and medium infrared semiconductor devices. The research and development of GaAs-based 1.5mu m Sb-based quantum dot lasers can provide the probability for replacing InP-based material devices, overcome the disadvantages of difficult superintegration among the InP-based materials and poor temperature stability, and provide a novel optical source with low cost, low power consumption and good performance for optical communication. The invention relates to epitaxial growth design and a method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots, which can realize the research and development of the low-dimension epitaxial growth of antimonide systems.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser materials, and belongs to the technical field of epitaxial growth of new semiconductor laser materials. Background technique [0002] Lasers with semiconductor low-dimensional structures as the active region theoretically have the advantages of lower threshold current density, higher optical gain, higher characteristic temperature and wider modulation bandwidth. [0003] In recent years, although the low-temperature epitaxial growth technology, AlGaAsSb buffer layer and GaAsSb or high indium composition InGaAs cap layer to reduce strain technology, etc., the room temperature luminescence wavelength of InGaAs quantum dot structure on GaAs base has covered 1.3μm and 1.5μm. Two important communication windows, but breakthrough research on 1.5 μm high-efficiency semiconductor lasers is still limited. [0004] III-V group antimonides show more and more important research value and applicat...

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IPC IPC(8): H01S5/30C23C14/06C23C14/24
Inventor 李占国刘国军尤明慧李林李梅乔忠良邓昀王勇王晓华赵英杰李联合
Owner CHANGCHUN UNIV OF SCI & TECH
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