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Quantum dot laser and preparation method thereof

A technology of lasers and quantum dots, applied in the field of lasers, can solve problems such as laser defects, and achieve the effects of easy operation and implementation, elimination of dislocation defects, and simple methods

Inactive Publication Date: 2020-06-12
SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot laser and its preparation method, aiming to solve the problem that the existing silicon substrate and the III-V group compound cause a large number of defects in the laser due to the lattice mismatch

Method used

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  • Quantum dot laser and preparation method thereof

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preparation example Construction

[0085] An embodiment of the present invention provides a method for preparing a quantum dot laser, comprising the following steps:

[0086] S1. Select a single crystal silicon substrate;

[0087] S2. Etching several holes on the single crystal silicon substrate to obtain a porous single crystal silicon substrate;

[0088] S3. Growing a filling layer, a lower electrode, a first superlattice waveguide layer, an active region, a second superlattice waveguide layer, and an upper electrode sequentially on a porous single crystal silicon substrate to obtain a quantum dot laser.

[0089] The present invention obtains a porous single crystal silicon substrate by etching several holes on the single crystal silicon substrate, and the obtained porous single crystal silicon substrate can eliminate a large number of dislocation defects caused by the lattice mismatch between it and the material in the active region , which has the advantages of simple method and convenient operation and im...

Embodiment

[0104] (1) On a single crystal silicon substrate with a thickness of about 380 μm, a circle with a diameter of 50 nm and a depth of 100 nm is fabricated on the single crystal silicon substrate by photolithography technology, and the SF 6 Reactive etching gas, the etching power is 200W, the reaction gas pressure is 25Pa, the reaction gas flow rate is 35sccm, and the etching time is 10 seconds to obtain a porous single crystal silicon substrate;

[0105] (2) In the epitaxial growth chamber, first heat the porous single crystal silicon substrate to 940°C for 600s, then lower the temperature of the porous single crystal silicon substrate to 580°C, grow a 150nm GaAs filling layer, pause for 30s, and then grow again 500nm GaAs buffer layer;

[0106] (3) Grow n-type doped Al on the GaAs buffer layer 0.3 Ga 0.7 As bottom electrode, the thickness is 1.5 microns, the growth temperature is 580°C, the growth rate is 0.598 μm / h, the doping element is Be, and the doping concentration is ×...

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Abstract

The invention belongs to the technical field of lasers, and particularly relates to a quantum dot laser and a preparation method thereof. The quantum dot laser sequentially comprises a porous monocrystalline silicon substrate, a filling layer, a lower electrode, a first superlattice waveguide layer, an active region, a second superlattice waveguide layer and an upper electrode from bottom to top.Due to the fact that lattice mismatch exists between the monocrystalline silicon substrate and the active region, adverse effects are brought to manufacturing and performance of the device. Accordingto the quantum dot laser, the porous monocrystalline silicon substrate is adopted, and a large number of dislocation defects caused by lattice mismatch of the monocrystalline silicon substrate and theactive region are released by using a porous structure, so that the performance of the obtained quantum dot laser is improved.

Description

technical field [0001] The invention belongs to the technical field of lasers, and in particular relates to a quantum dot laser and a preparation method thereof. Background technique [0002] The operating wavelength of a semiconductor optoelectronic device is closely related to the semiconductor material used to make the device. With the development of optoelectronic devices, in the pursuit of newer, smaller, and better performance quantum devices, it is found that it is not enough to confine carriers in only one dimension, and it is necessary to confine carriers in two or three dimensions. Fluids achieve quantum confinement, thus forming one-dimensional quantum wires or quantum dots. [0003] Quantum wire / quantum dot lasers have the advantages of high gain, low threshold current, high differential gain and modulation frequency, and their spectral line width has also been significantly improved. After being developed, they have been widely optimized and applied. However, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34
CPCH01S5/34H01S5/3412
Inventor 李世国周志文谭晓玲张卫丰王新中陈艳
Owner SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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