Preparation method of all-inorganic semiconductor quantum dot laser

Abstract

The invention discloses a preparation method of an all-inorganic semiconductor quantum dot laser, all-inorganic quantum dots are CdSe / CdS@ZnO quantum dots modified by taking inorganic ZnO sol as a surface ligand, and a quantum dot film is subjected to high-temperature annealing treatment and then is used as an optical gain dielectric layer of a quantum dot micro laser. Afterwards, high-quality upper high-reflectivity mirror is deposited in room temperature environment through electron beam thermal evaporation method; and finally, the all-inorganic semiconductor quantum dot micro laser is manufactured. The all-inorganic quantum dot laser can effectively solve the problem that the optical performance and the device performance of a traditional quantum dot are unstable due to organic ligands on the surface of the traditional quantum dot, and then the emission performance and the stability of the quantum dot laser are enhanced. According to the preparation method of the full-inorganic quantum dot laser, the quantum dot micro laser device can be promoted to be practically applied.

Description

technical field [0001] The invention provides a preparation method of an all-inorganic semiconductor quantum dot laser. The optical properties of inorganic quantum dots and their device stability are significantly enhanced, which will help promote the commercial application of semiconductor quantum dot optoelectronic devices. Background technique [0002] Colloidal semiconductor quantum dots have a large specific surface area, and a large number of active atoms and dangling bonds on the surface can easily cause surface defect states, which will seriously reduce the fluorescence quantum yield and nonlinear optical properties of quantum dots. With the rapid development of the preparation methods of colloidal semiconductor quantum dots and their optical properties, the theory of "energy band engineering" of heterostructures has become the primary choice for passivating the surface defect states of quantum dots and improving their optical properties. [0003] Generally, inorgan...

AI Technical Summary

Problems solved by technology

[0005] Technical problem: In order to solve the chain problem caused by surface organic ligands in the existing quantum dot technology and practical application, the present invention proposes a preparation method of an all-inorganic semiconductor quantum dot laser, which not only has excellent optical properties but also can solve the bottleneck of practical application Laser Device Stability

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