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Preparation method of all-inorganic semiconductor quantum dot laser

An inorganic semiconductor, quantum dot technology, applied in semiconductor lasers, semiconductor laser structure details, lasers, etc., can solve problems such as bottleneck laser device stability, achieve high-performance spatially oriented laser emission, avoid further damage, and excellent solvent dispersion sexual effect

Pending Publication Date: 2021-10-29
NANTONG UNIVERSITY
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Problems solved by technology

[0005] Technical problem: In order to solve the chain problem caused by surface organic ligands in the existing quantum dot technology and practical application, the present invention proposes a preparation method of an all-inorganic semiconductor quantum dot laser, which not only has excellent optical properties but also can solve the bottleneck of practical application Laser Device Stability

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Embodiment 1

[0028] A kind of concrete steps of the preparation method of semiconductor quantum dots modified by inorganic ligands:

[0029] (1) Preparation of CdSe / CdS core-shell quantum dots: first, use CdO and oleic acid to prepare cadmium oleate as a Cd precursor, and add Se precursor to the prepared cadmium oleate to prepare CdSe nuclear quantum dots; then, the The above-mentioned purified CdSe quantum dots, 10 mL oleylamine and 30 g octadecane were added into a three-necked flask. Under the protection of argon, the reaction temperature was raised to 240 °C, and the Cd precursor and the S precursor were alternately injected using the continuous ion layer adsorption and reaction method. CdSe / CdS core-shell quantum dots with a shell thickness of 11 CdS monolayers were obtained by controlling the injection amount of the precursor, which were dispersed in toluene after centrifugal purification.

[0030] (2) Preparation of all-inorganic CdSe / CdS@ZnO quantum dots

[0031] Pretreatment of ...

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Abstract

The invention discloses a preparation method of an all-inorganic semiconductor quantum dot laser, all-inorganic quantum dots are CdSe / CdS@ZnO quantum dots modified by taking inorganic ZnO sol as a surface ligand, and a quantum dot film is subjected to high-temperature annealing treatment and then is used as an optical gain dielectric layer of a quantum dot micro laser. Afterwards, high-quality upper high-reflectivity mirror is deposited in room temperature environment through electron beam thermal evaporation method; and finally, the all-inorganic semiconductor quantum dot micro laser is manufactured. The all-inorganic quantum dot laser can effectively solve the problem that the optical performance and the device performance of a traditional quantum dot are unstable due to organic ligands on the surface of the traditional quantum dot, and then the emission performance and the stability of the quantum dot laser are enhanced. According to the preparation method of the full-inorganic quantum dot laser, the quantum dot micro laser device can be promoted to be practically applied.

Description

technical field [0001] The invention provides a preparation method of an all-inorganic semiconductor quantum dot laser. The optical properties of inorganic quantum dots and their device stability are significantly enhanced, which will help promote the commercial application of semiconductor quantum dot optoelectronic devices. Background technique [0002] Colloidal semiconductor quantum dots have a large specific surface area, and a large number of active atoms and dangling bonds on the surface can easily cause surface defect states, which will seriously reduce the fluorescence quantum yield and nonlinear optical properties of quantum dots. With the rapid development of the preparation methods of colloidal semiconductor quantum dots and their optical properties, the theory of "energy band engineering" of heterostructures has become the primary choice for passivating the surface defect states of quantum dots and improving their optical properties. [0003] Generally, inorgan...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02H01S5/34C09K11/88C09K11/02B05D1/00B05D3/02B82Y20/00B82Y30/00B82Y40/00
CPCH01S5/0218H01S5/3412B05D1/005B05D3/0254C09K11/883C09K11/02B82Y20/00B82Y30/00B82Y40/00
Inventor 张雷王超男
Owner NANTONG UNIVERSITY
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