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Preparation method of single-mode gallium arsenide-based quantum dot laser

A gallium arsenide-based, laser technology, applied in lasers, phonon exciters, laser parts and other directions, can solve the problems of high cost, complex single longitudinal mode laser manufacturing process, and difficulty in mass production, and avoid aluminum oxidation. , reduce complexity and cost, enhance reliability

Active Publication Date: 2021-05-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0007] The main purpose of the present invention is to propose a method for preparing a single-mode gallium arsenide-based quantum dot laser, so as to solve the problem of complex manufacturing process, high cost and difficulty in large-scale production of single longitudinal mode lasers

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  • Preparation method of single-mode gallium arsenide-based quantum dot laser
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  • Preparation method of single-mode gallium arsenide-based quantum dot laser

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[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] Such as figure 1 as shown, figure 1 It is a flowchart of a preparation method of a single-mode gallium arsenide-based quantum dot laser according to an embodiment of the present invention. The single-mode gallium arsenide-based quantum dot laser adopts a strip-shaped ridge waveguide structure, including a gain region and a high-order grating region, wherein the In the high-order grating area described above, a series of equal-period grating grooves are deeply etched, and the refractive index modulation is introduced into the Fabry-Perot (FP) cavity, so that the mirror loss of the FP cavity has a minimum value at a specific wavelength. When the device works above the threshold, the point with the smallest mode gain...

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Abstract

A method for preparing a single-mode gallium arsenide-based quantum dot laser, the method comprising: growing a mask thin layer on the P-side of a gallium arsenide-based epitaxial wafer, and performing a standard photolithography on the mask thin layer to produce surface high-order Grating groove; then grow a thin mask layer on the P surface of the epitaxial wafer, and perform standard photolithography twice on the thin mask layer to produce a strip-shaped ridge waveguide; then grow a thin mask layer, and perform standard photolithography three times Form an electrical injection window; perform standard photolithography four times on the P side of the epitaxial wafer and peel off the photoresist to form an ohmic contact electrode on the P side; finally make an ohmic contact electrode on the N-type substrate on the back of the GaAs-based epitaxial wafer, and resist the arsenic Gain-based epitaxial wafers are cleaved into lasers including gain regions and high-order grating regions, and the lasers are packaged. The invention can generate stable single-mode lasing without making small-period gratings and secondary epitaxy through the standard photolithography process, reduces the complexity and cost of the process, and facilitates device preparation and large-scale production.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a preparation method of a single-mode gallium arsenide-based quantum dot laser. Background technique [0002] For the light in the optical fiber transmission window and the wavelength band with small dispersion in ordinary single-mode optical fiber, it meets the data exchange requirements of LAN or metropolitan area network, and is very suitable for short-distance data transmission. The current commercial optical communication LAN light sources are mainly InP-based quantum well lasers. Due to the limitations of the material system itself, this laser is difficult to meet the requirements of low cost, low power consumption, and high-speed direct modulation, and it also has a fatal shortcoming. : Output changes significantly with temperature. [0003] Compared with quantum wells, the faster carrier dynamics process in quantum dots contributes to the improvemen...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/343
CPCH01S5/1231H01S5/34313
Inventor 杨涛丁芸芸
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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