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Preparation method of single-mode gallium arsenide-based quantum dot laser

A gallium arsenide-based laser technology, which is applied to lasers, phonon exciters, laser components, etc., can solve problems such as high cost, difficulty in large-scale production, and complicated manufacturing process of single longitudinal mode lasers, so as to avoid aluminum oxidation , reduce complexity and cost, and enhance reliability

Active Publication Date: 2019-12-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0007] The main purpose of the present invention is to propose a method for preparing a single-mode gallium arsenide-based quantum dot laser, so as to solve the problem of complex manufacturing process, high cost and difficulty in large-scale production of single longitudinal mode lasers

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  • Preparation method of single-mode gallium arsenide-based quantum dot laser

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[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] Such as figure 1 as shown, figure 1 It is a flowchart of a preparation method of a single-mode gallium arsenide-based quantum dot laser according to an embodiment of the present invention. The single-mode gallium arsenide-based quantum dot laser adopts a strip-shaped ridge waveguide structure, including a gain region and a high-order grating region, wherein the In the high-order grating area described above, a series of equal-period grating grooves are deeply etched, and the refractive index modulation is introduced into the Fabry-Perot (FP) cavity, so that the mirror loss of the FP cavity has a minimum value at a specific wavelength. When the device works above the threshold, the point with the smallest mode gain...

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Abstract

A preparation method of a single-mode gallium arsenide-based quantum dot laser comprises the following steps: growing a thin mask layer on the P surface of a gallium arsenide-based epitaxial wafer, and carrying out first standard photo-etching on the thin mask layer to manufacture a surface high-order grating groove; growing a thin mask layer on the P surface of the epitaxial wafer, and performingsecond standard photo-etching on the thin mask layer to manufacture a strip-shaped ridge waveguide; growing a thin mask layer, and carrying out third standard photo-etching to form an electric injection window; performing fourth standard photo-etching on the P surface of the epitaxial wafer and stripping the photoresist to form a P surface ohmic contact electrode; and finally, manufacturing an ohmic contact electrode on an N-type substrate on the back surface of the gallium arsenide-based epitaxial wafer, cleaving the gallium arsenide-based epitaxial wafer to obtain a laser comprising a gainregion and a high-order grating region, and packaging the laser. According to the invention, through a standard photo-etching process, stable single-mode lasing can be generated without manufacturinga small-period grating and secondary epitaxy, the complexity and cost of the process are reduced, and the preparation and large-scale production of the device are facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a preparation method of a single-mode gallium arsenide-based quantum dot laser. Background technique [0002] For the light in the optical fiber transmission window and the wavelength band with small dispersion in ordinary single-mode optical fiber, it meets the data exchange requirements of LAN or metropolitan area network, and is very suitable for short-distance data transmission. The current commercial optical communication LAN light sources are mainly InP-based quantum well lasers. Due to the limitations of the material system itself, this laser is difficult to meet the requirements of low cost, low power consumption, and high-speed direct modulation, and it also has a fatal shortcoming. : Output changes significantly with temperature. [0003] Compared with quantum wells, the faster carrier dynamics process in quantum dots contributes to the improvemen...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/343
CPCH01S5/1231H01S5/34313
Inventor 杨涛丁芸芸
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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