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Method for preparing er-doped silicon carbide optical waveguide through ion implantation

A silicon carbide optical and ion implantation technology, applied in the direction of light guides, optics, optical components, etc., can solve the problems of low activation efficiency, secondary defects, and restrictions on erbium-doped silicon carbide optical waveguides, so as to avoid low waveguide gain and improve Effects of light gain and enhancement of fluorescence luminous efficiency

Inactive Publication Date: 2013-12-25
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If ordinary thermal annealing is performed on SiC samples doped with impurity ions, only high temperatures around 1400°C can repair some of the lattice defects and activate the impurity ions implanted into the sample, but the activation efficiency is not high, and at the same time, secondary Sub-defects increase sample surface contamination and lead to redistribution of dopant ions
These factors restrict the development of erbium-doped silicon carbide optical waveguides to a certain extent.

Method used

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  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation
  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation
  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation

Examples

Experimental program
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Effect test

Embodiment 1

[0028] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasonic waves, and then the cleaned silicon carbide sample 1 is cleaned.

[0029] (2) Put the sample cleaned in (1) in the target chamber of the accelerator, and evacuate to 1×10 Pa, the implantation process of oxygen ions is performed. The injection energy is 0.5MeV, and the injection dose is 1×10 ions / cm , the whole process is carried out at a temperature of 600°C.

[0030] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200°C, and the annealing time is 0.5h. Through this process, a silicon dioxide buried layer 2 with a thickness of approximately 600 nm and a near-stoichiometric ratio can be obtained on the silicon carbide sample.

[0031] (4) Place the sample obtained in (3) in the target chamber of the accelerato...

Embodiment 2

[0036] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasonic waves, and then the cleaned silicon carbide sample 1 is cleaned.

[0037] (2) Put the sample cleaned in (1) in the target chamber of the accelerator, and evacuate to 1×10 Pa, the implantation process of oxygen ions is performed. The injection energy is 1MeV, and the injection dose is 2.5×10 ions / cm , the whole process is carried out at a temperature of 650°C.

[0038] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200° C., and the annealing time is 1 h. A nearly stoichiometric silicon dioxide buried layer 2 with a thickness of about 970 nm can be obtained on the silicon carbide sample through this process.

[0039] (4) Place the sample obtained in (3) in the target chamber of the accelerator, and evacuate to...

Embodiment 3

[0043] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasonic waves, and then the cleaned silicon carbide sample 1 is cleaned.

[0044] (2) Put the sample cleaned in (1) in the target chamber of the accelerator, and evacuate to 1×10 Pa, the implantation process of oxygen ions is performed. The injection energy is 2.0MeV, and the injection dose is 2.5×10 ions / cm , the whole process is carried out at a temperature of 650°C.

[0045] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200° C., and the annealing time is 1 h. Through this process, a silicon dioxide buried layer 2 with a thickness of approximately 600 nm and a near-stoichiometric ratio can be obtained on the silicon carbide sample.

[0046] (4) Place the sample obtained in (3) in the target chamber of the acceler...

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Abstract

The invention relates to a method for preparing an er-doped silicon carbide optical waveguide through ion implantation. The method sequentially comprises the steps of crystal polishing and cleaning, oxygen ion implantation, annealing, erbium ion implantation and annealing and finally an er-doped silicon carbide waveguide is obtained. The SOI semiconductor technology is adopted in the process that a silicon dioxide lower coating layer of the er-doped silicon carbide optical waveguide is prepared, so that a silicon dioxide buried layer with the stoichiometric ratio is generated, and the refractivity difference value between the silicon dioxide buried layer and an er-doped silicon carbide waveguide core layer is large. In the er-doped silicon carbide waveguide core layer, the concentration of erbium ions accords with Gaussian distribution, the concentration of the erbium ions in the middle of the er-doped silicon carbide waveguide core layer is the highest, the fluorescence radiation efficiency of the erbium irons is effectively improved, and light gain is improved. The depth and the concentration of the implanted erbium ions can be accurately controlled through adjustment of implantation energy and implantation doses and the phenomena that waveguide gain is low due to the ultra-low concentration of the implanted erbium ions and the concentration quenching effect occurs due to the ultra-high concentration of the implanted erbium ions can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing an erbium-doped silicon carbide optical waveguide. Background technique [0002] As a wide bandgap semiconductor, silicon carbide has a wide light transmission range (0.54-2.0 μm), and is suitable for preparing optical waveguides from visible to near-infrared, especially at the wavelength of long-distance optical communication. In addition, silicon carbide also has the characteristics of high mechanical strength, stable chemical properties, and high thermal conductivity, and has great advantages in making optical waveguide sensors in harsh environments. The doping of rare earth element Er (erbium) ions has always been a research hotspot in the field of optoelectronics. The main reason is that the electronic transition on the 4f shell of erbium ions can emit photons with a wavelength of about 1.5 microns. And 1.5 micron is the wavelength...

Claims

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Application Information

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IPC IPC(8): G02B6/122G02B6/134
Inventor 付刚张秀全季燕菊秦希峰
Owner SHANDONG JIANZHU UNIV
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