Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

44results about How to "High compressive stress" patented technology

Heat treatment method for down-the-hole drill bit of high-wind pressure drilling tool, and drill bit

The invention relates to a heat treatment method for a down-the-hole drill bit of a high-wind pressure drilling tool. The method comprises the following steps: heating the original down-the-hole drill bit to 750-850 DEG C for forging and beating, forming and die forging, conducting air cooling after heating at 900-950 DEG C for four hours to five hours, conducting furnace cooling to be lower than 200 DEG C after heating at 650-700 DEG C for four hours to five hours, carrying out numerical control machining according to size requirement, conducting carburization treatment at 900-950 DEG C, then conducting high-temperature tempering to the carburization treatment, machining, and conducting isothermal quenching at 850-900 DEG C. The invention further relates to a down-the-hole drill bit of the high-wind pressure drilling tool, which is manufactured by the heat treatment method. The down-the-hole drill bit is subjected to mechanical treatment after being heated and cooled for many times, so that the toughness and plasticity of the down-the-hole drill bit can be greatly improved, the surface hardness and compression stress of the down-the-hole drill bit can also be enhanced, and the fatigue resistance strength and the wear resistance of threads can be improved.
Owner:CHANGSHA HEIJINGANG IND CO LTD

High-entropy alloy gradient stress modification technology

InactiveCN105543749AUniform and excellent tissue performanceEasy to useFine structureHigh entropy alloys
The invention relates to a gradient stress plasticity modification method which specially aims at damage control and fine structure regulation of high-entropy alloy material characteristics. The purpose of the method is to solve the problems that a high-entropy alloy casting state structure is mainly composed of bulky pine-tree crystals, and the comprehensive mechanical property of the high-entropy alloy casting state structure is poor. A preparation method mainly comprises the steps that a high-entropy alloy ingot is prepared; homogenization heat treatment, analogue simulation and canned forging are conducted; and a high-entropy alloy ingot blank is obtained. When the high-entropy alloy ingot is processed, preset variable cross-section canning is mainly adopted, the stress state of the interior of a high-entropy alloy material in the process is effectively controlled, and the gradient three-way compressive stress combined with deformation characteristics is formed. By means of the gradient stress plasticity modification method, initiation and propagation of microcracks induced by lattice distortion can be effectively inhibited finally, crystalline grains are refined, the comprehensive mechanical property is improved, and effective modification of the high-entropy alloy is achieved.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Ceramic for Decorative Part and Decorative Part Comprising the Same

A ceramic for decorative parts is provided which has excellent wearing resistance and can retain over long a gold color tone capable of giving a high-grade feeling, a feeling of aesthetic satisfaction, and spiritual comfortableness. Also provided is a decorative part comprising the ceramic. The ceramic for a decorative part is characterized by comprising 50 mass % or more titanium nitride, 6 mass % or more and 30 mass % or less unstabilized zirconia containing substantially no stabilizer, and nickel, the unstabilized zirconia having a crystal grain size smaller than the crystal grain size of the titanium nitride.
Owner:KYOCERA CORP

Composite removable hardmask

A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.
Owner:APPLIED MATERIALS INC

Rectangular spherical hinge adjusting gradient laminated rubber bearing for highway bridge

The invention discloses a rectangular spherical hinge adjusting gradient laminated rubber bearing for a highway bridge, which comprises a concrete bearing cushion and further comprises an concave arc steel plate and a bearing main body, wherein the concave arc steel plate is arranged in a beam; the bearing main body is arranged on the concrete bearing cushion; a steel spherical crown cylinder station is arranged at the top of the bearing main body; the top of the a steel spherical crown cylinder station is provided with a a steel spherical crown; and the spherical crown surface of the steel spherical crown is in fit with the concave arc surface of the concave arc steel plate. A steel plate can be arranged between the bearing main body and the concrete bearing cushion; a stainless steel plate is arranged between the steel plate and the bearing main body; and a polytetrafluoroethylene board is arranged between the stainless steel plate and the bearing main body. The rectangular spherical hinge adjusting gradient laminated rubber bearing for the highway bridge has a simple structure, is easy to manufacture and can be directly installed according to the longitudinal and transverse gradient requirements of the bridge, so that a leveling structure between the bearing and a beam body is omitted, the stress of the bearing is improved, the bearing is stressed in a balance mode, the bridge design is also simplified, the rectangular spherical hinge adjusting gradient laminated rubber bearing is convenient to install and replace and the bearing can be well suitable for the longitudinal and transverse gradients of the bridge.
Owner:CCCC SECOND HIGHWAY CONSULTANTS CO LTD

High-strength pressure resisting glass vessel and preparation method

The invention discloses a high-strength pressure resisting glass vessel. The high-strength pressure resisting glass vessel is prepared from the following raw materials in parts by weight: 60 to 65 parts of quartz sand powder, 1 to 3 parts of alumina whisker, 0.1 to 0.3 part of borax, 0.1 to 1 part of zinc chloride, 1 to 5 parts of sodium silicate, 2 to 5 parts of feldspar, 3 to 8 parts of calciumcarbonate whisker, 2 to 5 parts of calcium sulfate whisker and 2 to 3 parts of silicon carbide whisker. A preparation method of the high-strength pressure resisting glass vessel comprises the following steps: firstly, weighing raw materials according to the weight ratio, crushing, sieving, stirring and mixing to obtain a mixed material; secondly, putting the mixed material in the first step into asmelting furnace and insulating to obtain a glass melt solution; thirdly, feeding the melt solution in the second step into a forming machine for forming to obtain glass vessels with different specifications and shapes; fourthly, putting the glass vessel in the third step into a continuous annealing furnace, annealing for 40 to 60 minutes, carrying out polishing treatment on a product after annealing is finished and obtaining a finished product after the polishing treatment is ended.
Owner:安徽晶晶玻璃制品有限公司

Method for manufacturing embedded source/drain MOS transistors

The invention provides a method for manufacturing embedded source/drain MOS transistors. The method comprises the steps that gate structures are formed on a PMOS transistor area and an NMOS transistor area formed on a semiconductor substrate respectively; an oxidation barrier layer is deposited; through a nitriding technology and a post-nitridation annealing technology, nitrogen is added to the oxidation barrier layer to form a nitrogen oxidation barrier layer, and a part of the nitrogen oxidation barrier layer is removed to expose the PMOS transistor area or the NMOS transistor area, or after a part of the oxidation barrier layer is removed to expose the PMOS transistor area or the NMOS transistor area, nitrogen is added to the remaining oxidation barrier layer to form the nitrogen oxidation barrier layer through the nitriding technology and the post-nitridation annealing technology; channels adjacent to the two sides of each gate structure are formed in the exposed area; strained silicon materials grow in the channels in an epitaxial mode to form the embedded source/drain MOS transistors. According to the method, the rate of epitaxial growth of the strained silicon materials in the channels is guaranteed, and the risk of pollution to the embedded source/drain MOS transistors can be lowered through the remaining oxidation barrier layer.
Owner:SEMICON MFG INT (SHANGHAI) CORP

House used for livestock breeding

InactiveCN109349121AConducive to the growth of livestock and poultryLow costLivestock managementAnimal housingEngineeringSunlight
The invention discloses a house used for livestock breeding, and relates to the technical field of breeding houses. According to the house used for livestock breeding, the roof of the house is set asa double-layer roof, the upper roof layer is set as a light transmitting roof, and the lower roof layer is sets as a light-tight temperature preserving roof; the upper roof layer is made from a transparent material, and the lower roof layer is set as an overturn light blocking fence structure; the overturn light blocking fence structure comprises a controller, several light blocking fences, several supporting rods and several servo motors, the supporting rods are respectively and fixedly arranged at the two opposite ends of the inner side of the upper roof layer, and rotary shafts are respectively arranged at the two opposite ends of each light blocking fence; the two ends of each light blocking fence respectively penetrate through the supporting rods at the two ends through the rotary shafts and can rotate relative to the supporting rods at the two ends, and all the servo motors are connected with the rotary shafts at the ends and a controller. According to the house used for livestock breeding, natural sunlight can be effectively utilized for sterilizing and disinfecting the inside of the house, and the effect of preserving heat in the house is achieved.
Owner:广西乐业康辉生态养殖专业合作社

Combined box beam

The invention relates to a combined box beam which comprises a netted steel box beam and upper part concrete (51) poured on the upper side inside the steel box beam; the steel box beam comprises a steel beam upper flange (10), a steel beam lower flange (20) and a steel web plate (30), wherein an opening area (11) is longitudinally formed in the center of the steel beam upper flange (10); the steel beam lower flange (20) is formed a certain distance away from the steel beam upper flange (10); the steel web plate (30) is connected with the two sides of the steel beam upper flange (10) and the two sides of the steel beam lower flange (20), and the height of the steel web plate (30) is greater than the width of the steel beam upper flange (10) and the width of the steel beam lower flange (20). The composite box beam provided by the invention has the following benefit that as the width of each of the steel beam upper flange (10) and the steel beam lower flange (20) of the steel box beam is less than the height of the web plate, and a mesh shape is formed, the steel consumption of the steel beam upper flange (10) and the steel beam lower flange (20) is reduced, and the quantity of reinforcing components longitudinally or transversely arranged inside a bridge is reduced, therefore, the steel consumption is greatly reduced, and the manufacturing process is simplified.
Owner:BEIJING DISHENG KECHUANG CONSTR ENGCO +1

High-entropy alloy extruding and mounding composite modification technology

InactiveCN107881443AEasy to implementUniform and excellent tissue performanceStructure propertyHigh entropy alloys
The invention relates to a hot working and grain refinement plasticity modification technology dedicated to high-entropy alloy material and a method to prepare high-performance high-entropy alloy material. The invention aims to provide an extruding and mounding composite plasticity modification method dedicated to the service requirement of high-entropy alloy. Aiming at the hot-working characteristic of high-entropy alloy, the method of first mounding and then extruding, mounding after extruding and repeated mounding and extruding is adopted, so that the stress state in the high-entropy alloymaterial during the deformation process is effectively controlled, the three-directional compression stress is increased, generation and expansion of microcracks evoked by lattice deformation are effectively restrained, the grain is refined, the comprehensive mechanical performance is improved, and effective modification of the high-entropy alloy is realized. The extruding and mounding composite technology is easy to realize and low in cost; high-entropy alloy ingot blank material with uniform and excellent structure property can be obtained, and the service capacity is effectively improved; and with adoption of the method, large-scale application of the high-entropy alloy is promoted, and the mechanical performance of the high-entropy alloy can be effectively improved and controlled.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Manufacturing method of embedded source/drain MOS transistor

The invention provides a method for manufacturing embedded source / drain MOS transistors. The method comprises the steps that gate structures are formed on a PMOS transistor area and an NMOS transistor area formed on a semiconductor substrate respectively; an oxidation barrier layer is deposited; through a nitriding technology and a post-nitridation annealing technology, nitrogen is added to the oxidation barrier layer to form a nitrogen oxidation barrier layer, and a part of the nitrogen oxidation barrier layer is removed to expose the PMOS transistor area or the NMOS transistor area, or after a part of the oxidation barrier layer is removed to expose the PMOS transistor area or the NMOS transistor area, nitrogen is added to the remaining oxidation barrier layer to form the nitrogen oxidation barrier layer through the nitriding technology and the post-nitridation annealing technology; channels adjacent to the two sides of each gate structure are formed in the exposed area; strained silicon materials grow in the channels in an epitaxial mode to form the embedded source / drain MOS transistors. According to the method, the rate of epitaxial growth of the strained silicon materials in the channels is guaranteed, and the risk of pollution to the embedded source / drain MOS transistors can be lowered through the remaining oxidation barrier layer.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Semiconductor structure and formation method, pmos transistor and formation method

The invention relates to a semiconductor structure and a forming method thereof, a PMOS (P-channel Metal Oxide Semiconductor) transistor and a forming method thereof. The forming method of the semiconductor structure comprises the following steps of: providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate sequentially comprises a silicon base, an insulated buried layer and top layer silicon; etching the top layer silicon until the insulated buried layer is exposed to form an active region; forming insulated oxide layers on the side wall and the top of the top layer silicon in the active region; and performing thermal oxidization treatment to ensure that the top layer silicon is bent upwards. The invention further provides a semiconductor structure, a PMOS transistor structure formed on the semiconductor structure and a forming method of the PMOS transistor structure. The invention aims to perform thermal oxidization treatment on the top layer silicon in a PMOS transistor device region so that the edge of the top layer silicon is bent upwards, so that the compression stress of the top layer silicon is enhanced and the performance of a subsequently-manufactured PMOS device is enhanced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Power storage battery

The invention provides a power storage battery (1) comprising at least one module (3) comprising power storage battery cells (5), each power storage battery cell (5) having a nominal value thickness E0, and at least one compartment (23) for receiving the at least one module (3); at least one of the transverse walls (31, 32) of the compartment is made of an elastic material; when the module (3) is engaged in the compartment (23), the transverse walls (31, 32) exert a compressive stress on the module (3) adapted to maintain the power storage cell (5) substantially at its nominal thickness E0.
Owner:FAURECIA SYST DECHAPPEMENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products