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174results about How to "Good resistance stability" patented technology

Polymer-carbon nanotube-carbon black composite temperature self-regulating positive temperature coefficient (PTC) electric heating material

The invention discloses a polymer-carbon nanotube-carbon black composite temperature self-regulating positive temperature coefficient (PTC) electric heating material. The polymer-carbon nanotube-carbon black composite temperature self-regulating PTC electric heating material has positive temperature coefficients and high PTC intensity. The polymer-carbon nanotube-carbon black composite temperature self-regulating PTC electric heating material comprises: by weight, 35 to 75% of one or more of high-density polyethylene, low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, nitrile rubber buna, epoxy resins and polyvinylidene fluoride, 15 to 55% of carbon black and carbon nanotubes, 3 to 12% of an inorganic filling material, and 0.02 to 0.1% of an antioxidant. The above raw materials are mixed, then are subjected to processing molding by a banbury or a double-screw extruder, and are subjected to radiation crosslinking to form the polymer-carbon nanotube-carbon black composite temperature self-regulating PTC electric heating material with high PTC intensity. The polymer-carbon nanotube-carbon black composite temperature self-regulating PTC electric heating material has high PTC intensity and thus a leakage current is low and security and heat stability are good. In an electric warming respect, the polymer-carbon nanotube-carbon black composite temperature self-regulating PTC electric heating material is widely utilized in the fields of temperature self-regulating heaters, over-current protection and temperature sensors.
Owner:谢志军

Phase change memory having stabilized microstructure and manufacturing method

A memory device having a phase change material element with a modified stoichiometry in the active region does not exhibit drift in set state resistance. A method for manufacturing the memory device includes first manufacturing an integrated circuit including an array of phase change memory cells with bodies of phase change material having a bulk stoichiometry; and then applying forming current to the phase change memory cells in the array to change the bulk stoichiometry in active regions of the bodies of phase change material to the modified stoichiometry, without disturbing the bulk stoichiometry outside the active regions. The bulk stoichiometry is characterized by stability under the thermodynamic conditions outside the active region, while the modified stoichiometry is characterized by stability under the thermodynamic conditions inside the active region.
Owner:MACRONIX INT CO LTD

Manufacturing method of electrothermal film

The invention discloses a manufacturing method of an electrothermal film. The manufacturing method comprises the following steps of A, preparing an electrothermal film treatment solution which comprises tin tetrachloride, titanium trichloride, antimony trichloride, calcium chloride, chromic oxide, manganese dioxide, nickel sesquioxide, isopropanol, alcohol and water, B, masking a substrate, C, heating the substrate to be 400-700 DEG C and then spraying the electrothermal film treatment solution on the substrate by a spray gun to form a semifinished electrothermal film, D, annealing the semifinished electrothermal film, and E, coating silver oxide paste on the surfaces of the two ends of the annealed semifinished electrothermal film, loading the semifinished electrothermal film into an electrode oven, baking and fusing the semifinished electrothermal film to form a whole, and obtaining the finished electrothermal film. The manufacturing method has the advantages that the stability of the electrothermal film is improved by adding antimony; the temperature resistance of the electrothermal film is improved by adding titanium; the infrared emitting ability of the electrothermal film is improved by adding nickel and manganese; and an adhesive force between the electrothermal film treatment solution and the substrate is increased by adding isopropanol.
Owner:成都世纪经尧科技有限公司

Preparation method of liquid silicone rubber composition

The invention relates to a preparation method of a liquid silicone rubber composition. The preparation method includes mixing polydimethylsiloxane, silica powder, magnesium carbonate, silane modificated conductive carbon black, fumed silica and treating agent to obtain a mixture, subjecting the mixture to heat treatment at 100-150 degrees for 0.5-5h, heating the mixture to 120-160 DEG C, evacuating the mixture under vacuum of -0.04--0.1MPa for 2-6hs, and grinding the mixture 2-4 times to obtain base gum after cooling the same to the indoor temperature; adding and mixing polydimethylsiloxane attenuation and platinum catalyst in the base gum at the normal temperature to obtain material A; adding and mixing polydimethylsiloxane attenuation, cross-linking agent and negative catalyst in the base gum at the normal temperature to obtain material B; mixing the material A and the material B, by weight, in the proportion of 1:1, subjecting the mixture to solidification at 100-200 DEG C for 0.1-50h to obtain the liquid silicone rubber composition. The preparation method is simple, and the liquid silicone rubber contains ultra-low low-molecular-weight content and is high in compression permanent deformation rate.
Owner:SHENZHEN CITY SQUARE SILICONE MATERIALS

Organic positive temperature coefficient thermistor and manufacturing method therefor

An organic positive temperature coefficient thermistor 10 having at least a pair of electrodes 2 and 3 positioned facing each other and a thermistor element 1 having a positive temperature coefficient of resistance which is positioned between the pair of electrodes 2 and 3, wherein the thermistor element 1 is a molded element consisting of a mixture which contains a polymer matrix and conductive particles having electronic conductivity, and wherein the thermistor element 1 has an amount of oxygen calculated by subtracting the amount of oxygen originally present in the various components of the mixture from the amount of oxygen contained in the thermistor element, which is 1.55 weight percent or less of the mass of the thermistor element.
Owner:TDK CORPARATION

Automatic resistance adjusting device for resistance strain gauge and resistance adjusting method

ActiveCN103668420ARealize automatic resistance adjustment functionHigh control precisionElectrical resistance and conductancePower flow
The invention discloses an automatic resistance adjusting device for a resistance strain gauge and a resistance adjusting method. The device comprises a vertically arranged rack, wherein a Z-axis moving device is mounted on the rack, and a resistance measuring and adjusting device and a CCD (charge coupled device) image acquisition device are fixed on the Z-axis moving device; the automatic resistance adjusting device for the resistance strain gauge further comprises an X-axis moving device, a Y-axis moving device and a gas-liquid combined valve; a product clamping table is mounted on the X-axis moving device; and the resistance measuring and adjusting device is provided with a detecting unit. The adjusting process is controlled by controlling parameters such as current or voltage loaded on the resistance strain gauge, voltage loading time, a resistance adjusting liquid amount and the like, the equipment control accuracy is high, and the operation is easy; the device has a great advantage in the aspects of realizing mass and mechanical operation; and meanwhile, a product whose resistance is adjusted with an electrochemical resistance adjusting method doesn't produce internal stress in a sensitive grid area, so that the stability, the uniformity and the accuracy of the resistance of the product can be improved greatly.
Owner:ZHONGHANG ELECTRONICS MEASURING INSTR
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