37results about How to "Good crystal orientation" patented technology

The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not less than 20 times the sum of all other peaks. Also the metal oxide film of the present invention is a dense film that includes less oxygen defects and almost no voids therein because a content of a non-oxidized metal is not higher than 1 mole % of a metal component that constitutes the metal oxide and a packing density is 0.98 or higher.

Superconductor reactors, methods and systems are disclosed.

The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not less than 20 times the sum of all other peaks. Also the metal oxide film of the present invention is a dense film that includes less oxygen defects and almost no voids therein because a content of a non-oxidized metal is not higher than 1 mole % of a metal component that constitutes the metal oxide and a packing density is 0.98 or higher.

The invention relates to a preparation method of a nanocrystalline lead zirconate titanate-quartz composite structure piezoelectric sensing material. The preparation method comprises the following steps: firstly, preparing lead zirconate titanate (PZT) precursor sol, obtaining dry PZT gel by vacuum distillation, and then dissolving the dry gel into ethylene glycol monomethyl ether and adding mixture of glycerin and glacial acetic acid as drying control chemical reagents, thus preparing the PZT sol; and then spin-coating the PZT sol on surfaces of a quartz substrate and performing heat treatment to obtain a film, repeating spin-coating and heat treatment process to obtain a plurality of layers of films, and then performing crystallization treatment, thus obtaining the nanocrystalline PZT film by compounding the films on the quartz substrate and obtaining the nanocrystalline PZT-quartz composite structure piezoelectric sensing material. The characteristics of good piezoelectric property of the PZT and highly stable frequency of quartz crystals are fully utilized in the preparation method, and the PZT nanocrystalline structure compounded on the quartz substrate has the advantages of good crystallographic direction tendency, compact structure and higher piezoelectric coefficient.

The invention discloses a two-dimensional perovskite thin film material, a solar cell and a preparation method of the two-dimensional perovskite thin film material. Lead iodide, formamidine iodide, chloromethylamine, calcium bromide and calcium iodide are used as raw materials, dimethylformamide and dimethyl sulfoxide are used as a mixed solvent to prepare a perovskite precursor solution, and the film material is obtained through annealing after spin coating. The solar cell sequentially comprises a conductive substrate, an electron transport layer and a perovskite light absorption layer, a perovskite precursor solution is spin-coated on the conductive substrate coated with the electron transport layer, and the two-dimensional perovskite solar cell is prepared after annealing. The two-dimensional perovskite thin film material is used as a perovskite light absorption layer material in a solar cell. The chemical composition of the two-dimensional perovskite thin film is (CaBr) 2 (FA) n-1PbnI3n + 1, wherein FA is formamidine cations. According to the preparation method provided by the invention, the two-dimensional perovskite thin film material with relatively high crystallinity and relatively good performance can be obtained so that the photoelectric performance and efficiency of the perovskite solar cell are improved.

A perpendicular magnetic recording medium is disclosed that includes a substrate; a soft magnetic underlayer formed on the substrate; a seed layer of an amorphous material formed on the soft magnetic underlayer; an oxidation prevention layer formed on the seed layer; an underlayer formed on the oxidation prevention layer, the underlayer including multiple crystal grains formed of Ru or a Ru alloy having an hcp crystal structure, and a first air gap part configured to separate the crystal grains from each other; and a recording layer formed on the underlayer, the recording layer including multiple magnetic particles having a magnetocrystalline easy axis in a direction substantially perpendicular to the surface of the substrate, and one of a second air gap part and a non-magnetic non-solid-solution phase, the one being configured to separate the magnetic particles from each other. The oxidation prevention layer includes a noble metal element other than Ru.

Zinc oxide layer, including pure zinc oxide and doped zinc oxide, can be deposited with preferred crystal orientation and improved electrical conductivity by employing a seed layer comprising a metallic element. By selecting metallic elements that can easily crystallized at low temperature on glass substrates, together with possessing preferred crystal orientations and sizes, zinc oxide layer with preferred crystal orientation and large grain size can be formed, leading to potential optimization of transparent conductive oxide layer stacks.

The invention provides a high-performance permanent magnet material and a production method thereof, and particularly provides a permanent magnet material. The permanent magnet material comprises, by total weight, 30-50% of cobalt, 6-10% of titanium, 12-16% of nickel and 6-10% of aluminum. The permanent magnet material has excellent physical and magnetic performance.

The present invention relates to a textured substrate for epitaxial film formation, comprising a textured metal layer at least on one side, wherein the textured metal layer includes a copper layer having a cube texture and a nickel layer having a thickness of 100 to 20000 nm formed on the copper layer; the nickel layer has a nickel oxide layer formed on a surface thereof, having a thickness of 1 to 30 nm, and including a nickel oxide; and the nickel layer further includes a palladium-containing region formed of palladium-containing nickel at an interface with the nickel oxide layer. The top layer of the textured substrate, i.e. the nickel oxide layer, has a surface roughness of preferably 10 nm or less.

The invention discloses a casting method of a single-crystal superalloy blade capable of finely controlling three-dimensional crystal orientation. The method includes manufacturing a set of precision casting modules, preparing a nickel-based superalloy seed segment, pressing wax, the seed segment and a wax mold Assembling, mold shell preparation, and casting, the method provided by the invention can not only accurately control the primary crystal orientation of the crystal within 5°, but also can control the secondary crystal orientation within 5° to obtain high-precision three-dimensional crystal orientation requirements, thereby greatly Improve the service performance and mass production pass rate of single crystal turbine blades.

The invention belongs to the field of functional materials and relates to a ZnO-based transparent conductive film co-doped with Al-F and a preparation method thereof. The method is characterized in that the method comprises the following steps of: 1) firstly preparing a ZAFO target material, uniformly mixing AlF3, Al2O3 and ZnO powders to prepare the ZAFO target materials with different F contentsrespectively, wherein the ZAFO target materials contain, by weight percent (wt%): 0.5-3.0 of Al, 0.82-3.28 of F and the balance of ZnO; and 2) installing the prepared ZAFO target materials in the vacuum chamber of radio-frequency magnetism-controlled sputtering deposition equipment; utilizing a mechanical pump and a molecular pump to pump the vacuum chamber so that the vacuum degree is less than3 multiplied by 10<-3>Pa; simultaneously, heating the substrate to the temperature of 25 DEG C-500 DEG C; adjusting the deposition process parameters and preparing the ZAFO transparent conductive filmon the substrate by the radio-frequency magnetism-controlled sputtering. The method simplifies the coating process and improves the conductivity of the film and the transmittance of the visible light.

Superconductor reactors, methods and systems are disclosed.

The invention provides a high-performance permanent magnet material and a production method thereof, and particularly provides a permanent magnet material. The permanent magnet material comprises, by total weight, 30-50% of cobalt, 6-10% of titanium, 12-16% of nickel and 6-10% of aluminum. The permanent magnet material has excellent physical and magnetic performance.

The invention relates to aramid fiber III on-line thermal treating process and device thereof, which belongs to the technical field of special fiber. The aramid fiber III on-line thermal treating process comprises the following steps of: dividing the thermal treating process into a thermal drawing process and a thermal crystallization process; after aramid fiber III raw filament passes through a spinning drying section, directly winding on a first tension roller without coiling and uncoiling; guiding into a first tunnel furnace, and pretreating in the inert gas atmosphere under the conditionsof the temperature of 150-350 DEG C and draw ratio of 1-8%; guiding into a second tunnel furnace, and thermally treating in the inert gas or air under the conditions of the temperature of 360-550 DEGC and no drawing; applying oil to the obtained filament, drying and coiling to obtain the finished fiber with the strength more than 5.15GPa. By arranging a guide-in filament separating device and a guide-out filament separating device at both ends of the tunnel furnace, the invention can carry out thermal treatment on multiple filaments simultaneously, thereby greatly enhancing the production capability and decreasing the energy consumption.

The invention discloses a <, a 100>, an axial orientation Fe-Ga magnetostriction material and the preparation method thereof. The material composites are Fe1-x-yGaxAly; wherein, x is between 16 per cent and 21 per cent or 25 per cent and 28 per cent; y is between 0 per cent and 10 per cent; the rest part is iron. The preparation method is that the raw material is melted under the protection ofthe inert gas, and the improved percy williams bridgman method is adopted to prepare the Fe-Ga magnetostriction material through the directional solidification; The heat treatment conditions are thatthe material is preserved at 1100 DEG C. to 1200 DEG C. for 0.5 hours to 24 hours, cooled with the furnace till 900 DEG C. to 750 DEG C. for 0.5 hours to 24 hours temperature preservation and then quenched or cooled by air to room temperature; or the material is preserved at 1100 DEG C. to 1200 DEG C. temperature for 0.5 hours to 24 hours and is cooled with the furnace till 500 to 700 DEG C..