46results about How to "Ferroelectric" patented technology

The invention relates to a new electroluminescent device, in particular to a light emitting diode (LED) and an inorganic semiconductor lighting quantum dot or organic lighting material-based LED. The device comprises a ferroelectric thin layer (FTL) with ferroelectric performance or comprising a ferroelectric material. The invention also relates to the device structure and a production method of the electroluminescent device. The invention also relates to the application of the electroluminescent device in the lighting and display technologies and other occasions.

The invention discloses a method for preparing manganese, nickel codoped bismuth ferrite film by a sol-gel process. The method comprises the steps of weighing material ferric nitrate, bismuth nitrate, manganese acetate and nickel acetate according to a general formula BiFe(1-2x)MnxNixO3 (x is smaller than or equal to 0.05 and greater than or equal to 0.0125); adding glacial acetic acid to agitate for 30 minutes at 80 DEG C; and adding ethylene glycol monomethyl ether to agitate for 180 minutes at room temperature to prepare into a liquid precursor of which the concentration is 0.1-0.2mol / L. The final sample is obtained by preparing a wet film on indium tin oxide / glass or a platinum substrate by a spin-coating method, pre-annealing, finally annealing the film, and repeating the pre-annealing and film annealing processes for 10-20 times. The method has the characteristics that the impurity phase in bismuth ferrite can be effectively restrained; the grain size and the root-mean-square roughness of the film surface are reduced; the insulating property, ferroelectric properties, the ferromagnetic property and the optical property of the sample are improved; and the method is simple in production technology, good in reproducibility, and low in cost.

The invention discloses a clean process for comprehensively recovering diamond and various metal resources from waste diamond tools. According to the process, firstly, the waste diamond (tungsten carbide) tools are efficiently dissolved to obtain diamond (tungsten carbide) powder and an iron-containing leachate, and valuable elements copper and tin in the leachate are reduced into replacement slag by use of a pulse electro-intensified replacement method. Iron is recovered from the purified liquid by use of an out-field coupled diaphragm electrodeposition. The process has the advantages that the process flow is of closed-loop circulation, the oxidant is recyclable, and the common problems of existing NOx toxic gases, environmental pollution caused by acidic liquid, low metal recovery rate and the like of the traditional waste diamond (tungsten carbide) tool treatment process are solved; the process is applicable to various waste iron-based diamond (tungsten carbide) tools, waste iron-based hard alloys and the like, and has the outstanding advantages of high raw material adaptability, simple process flow, high valuable element recovery rate, cleanness and environmental protection.

The invention discloses a multiferroic liquid and a preparation method thereof, and aims at solving the defects that a solid multiferroic material is large in coercive force; the structure cannot be changed once the solid multiferroic material is formed; the magnetoelectric coupling effect is weak; and the solid multiferroic material is easily broken down by voltage. The multiferroic liquid is a stable suspension liquid which is formed by evenly dispersing nano particles with an electric-magnetic core-shell structure, which are formed by wrapping the outer surface of an internal ferroelectric material with a magnetic material, into a mixed liquid of a base liquid and a surfactant. The multiferroic liquid disclosed by the invention not only has ferroelectricity and magnetism, but also has liquidity and relatively small coercive force; and the lengths and the thicknesses of nanochains formed by the nano particles in the multiferroic liquid can be adjusted by applying different electric fields or magnetic fields to the multiferroic liquid according to the requirements, so that the characteristics of the multiferroic liquid in electricity, magnetics, fluid mechanics, optics and acoustics are adjusted. The invention provides the concept of the multiferroic liquid for the first time, and provides a preparation method. A new research direction is opened up for research of multiferroic materials.

The invention provides a preparation method of a BIT-Fe multiferroic ferroelectric ceramic. Bi2O3 (bismuth oxide), TiO2 (titanium dioxide) and Fe2O3 (ferric oxide) are used as raw materials, and the BIT-Fe multiferroic ferroelectric ceramic with a pure phase is prepared by a solid phase method, so that the ceramic has ferroelectricity, ferromagnetism and especially opposite ferromagnetism at the same time, and the BIT-Fe multiferroic ferroelectric ceramic has wide application prospects in spintronics and other fields. The preparation method disclosed by the invention has the characteristics that the preparation technology is simple, the preparation technology meets the requirements of industrialized production, and doped substances are simple and easy to obtain, so that the BIT ceramic has a multiferroic characteristic, the purity of the prepared ceramic is high, the prepared ceramic does not include other sundries or hazardous compounds, such as Pb (plumbum), and the prepared ceramic meets the manufacturing requirements of green electronic materials.

The invention belongs to the field of electronic functional materials, and concretely relates to a method for realizing coercive field reduction and pressure resistance improvement of a sodium bismuth titanate-based film. The general chemical formula of the film is Na0.5Bi0.5Ti1-xMnxO3-delta, wherein x is the mole content of manganese ions, x is greater than 0 and smaller than 0.05, and delta is the number of oxygen atoms which are lost to maintain the charge balance. An optimized chemical solution deposition preparation technology is adopted on the basis of the doping of the manganese ions to make the sodium bismuth titanate-based film with good ferroelectricity and dielectricity on an ITO / glass substrate. The sodium bismuth titanate-based film can be used to develop ferroelectric and dielectric functional materials and devices.

The invention discloses a preparation method of a single-phase multiferroic thin film. The preparation method comprises the steps that after a substrate is cleaned, a target material and the substrateare put into a coating cavity, and the pressure intensity in the cavity is adjusted; the temperature of the substrate is increased, then the cavity is filled with O2, and the pressure intensity in the cavity is adjusted; the distance between the substrate and the target material is adjusted, and the substrate and the target material are adjusted to rotate; the repetition frequency and pulse energy of a laser are adjusted; thin film deposition is conducted, and then heat preservation is conducted; and after heat preservation, cooling is conducted to the room temperature. The chemical composition of the target material is (1-m)BiTi(1-n) / 2FenMg(1-n) / 2O3-mCaTiO3, wherein 0<m<1, and 0<n<1. The preparation method provided by the invention has unique advantages when a thin film containing complex oxide is prepared, and the growth of the thin film can be precisely controlled in the preparation process. The invention further provides the single-phase multiferroic thin film and the applicationof the single-phase multiferroic thin film in an electronic device. The prepared thin film is compact and uniform, has ferroelectricity, ferromagnetism and magnetoelectric mutual controllability at the same time under room temperature, can be used in the electronic device containing a thin film, and has wide application prospects.

The invention discloses a preparation method for substituting fluorine for oxygen in bismuth ferrite crystal lattices. The method comprises the following steps of: 1, selecting a utensil made of anticorrosive material as a container, selecting diluted acid as a solvent, weighing nitride of Bi and nitride of Fe in a stoichiometric ratio, adding the nitrides into the solvent in a molar ratio of 1:1, preparing a proper amount of fluorine-containing salt, and adding citric acid into the solution; 2, performing initial reaction on the prepared solution in a water bath for (2.5+ / -0.5) hours with uniform stirring, and drying the reaction product in an oven to obtain powder; and 3, performing decomposition reaction on the obtained powder at the high temperature of 780+ / -15 DEG C for 30+ / -3 minutes, removing impurities, sheeting the decomposed powder, sintering the powder at the high temperature of 810+ / -15 DEG C for 10+ / -2 minutes, and thus obtaining a sample in which F-1 effectively enters BFO crystal lattices. The sample in which the fluorine effectively enters the bismuth ferrite crystal lattices and substitutes the oxygen has ferro-electricity and ferromagnetism, and the other path isprovided for realizing the development of multifunctional electronic devices.

The invention discloses a diisopropylpropylamine tetrafluoroborate crystal material, a preparation method and an application thereof, and belongs to the field of organic-inorganic hybrid materials. The crystalline material crystallizes at room temperature in P na2 1 The ferroelectric space group has two reversible phase transitions around 323.5K and 404K, and the heat absorption measured by differential calorimetry scanning is 40.375J / g and 11.014J / g, respectively. In addition, the preparation process of the crystal structure is simple, has good thermal stability and hydrophilic and lipophilic properties, can be mass-produced, and can be used as a low-cost, structurally defined amphiphilic room temperature ferroelectric material.

The invention relates to a bimetallic crocic acid complex and a preparation method thereof. The bimetallic crocic acid complex has a chemical formula of [TbK(C5O5)2(H2O)6].2H2O and C5O5<2-> is a crocic acid anion. The preparation method of the bimetallic crocic acid complex comprises respectively dissolving crocic acid, TbCl3 and KOH in water, mixing the three solutions, carrying out stirring, standing the mixture at a room temperature for 3 days so that saffron yellow blocky crystals are precipitated, carrying out filtration and collecting the product. The complex contains a one-dimensional chain-type metal unit and antiferromagnetc interaction is formed between metal ions. The complex crystallizes in a polar space group and has ferroelectricity at a room temperature. The solid complex is stimulated by light with wavelength of 372nm and the sample can emit strong fluorescence. Therefore, the bimetallic crocic acid complex has antiferromagnetism, ferroelectricity and fluorescent properties and is a latent photoelectromagnetic multifunctional material.

The invention provides a preparation method of a BIT-Fe multiferroic ferroelectric ceramic. Bi2O3 (bismuth oxide), TiO2 (titanium dioxide) and Fe2O3 (ferric oxide) are used as raw materials, and the BIT-Fe multiferroic ferroelectric ceramic with a pure phase is prepared by a solid phase method, so that the ceramic has ferroelectricity, ferromagnetism and especially opposite ferromagnetism at the same time, and the BIT-Fe multiferroic ferroelectric ceramic has wide application prospects in spintronics and other fields. The preparation method disclosed by the invention has the characteristics that the preparation technology is simple, the preparation technology meets the requirements of industrialized production, and doped substances are simple and easy to obtain, so that the BIT ceramic has a multiferroic characteristic, the purity of the prepared ceramic is high, the prepared ceramic does not include other sundries or hazardous compounds, such as Pb (plumbum), and the prepared ceramic meets the manufacturing requirements of green electronic materials.

This invention relates to a SBT-BST heterogeneous dielectric material, its composition method and the application, in which, said material takes a Si chip as the substrate and is composed of multi-layer substrate electrode and multi-layer film depositing on it, the electrode is composed of a Si chip and SiO2, Ti and Pt films depositing on the surface of the Si chip orderly, the multi-layer film is formed by SBT and BST films of N periods stacked alternately, and N is 3-99. The composition method of said material includes: depositing the SBT and BST films on a Pt / Ti / SiO2 / Si multi-layer substrate electrode alternately with the PLD technology. The application of the material includes: taking the material as the substrate and preparing IC active device MOS transistors on the SBT-BST heterogeneous dielectric material multi-layer film of the substrate with the standard IC technics.

The invention discloses a two-dimensional semiconductor material negative capacitance field effect transistor and a preparation method thereof; a two-dimensional alloy semiconductor material HfZrSe2 is adopted as a channel material, and the surface of the channel material is oxidized in air to generate HfZrO2, and then annealing is carried out to obtain an HfZrO2 dielectric layer with a ferroelectric property; a high-k gate dielectric layer is deposited on the dielectric layer, and a gate dielectric with a mixed structure is formed. By means of the device structure, high gate dielectric and channel two-dimensional semiconductor material interfaces can be obtained, the deterioration of the interface state on the sub-threshold characteristic is reduced, and the super-steep sub-threshold slope is easily obtained; meanwhile, the high-k gate dielectric on the upper layer can protect the HfZrO2 dielectric of the ferroelectric characteristics below, so that the dielectric is isolated from theair, and the stability of the device is greatly improved. The device is simple in preparation process and large-scale production can be realized.