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Strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and synthesizing method and application thereof

A technology of strontium bismuth tantalate and strontium barium titanate, which is applied in the field of microelectronics, can solve the problems of difficult MOS tube leakage current indicators, affecting the performance of MOS tubes and chips, and easy fatigue, and achieves low power consumption, low operating temperature, good performance

Inactive Publication Date: 2010-01-13
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The disadvantage of silicon dioxide is that continuous thinning makes it difficult to control the leakage current index of MOS transistors
The disadvantage of barium strontium titanate material is that barium strontium titanate material is prone to fatigue, that is, aging. Using barium strontium titanate material as the gate dielectric layer will greatly affect the performance of MOS tubes and chips

Method used

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  • Strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and synthesizing method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0025] Except for the following differences, the rest are the same as the specific operation steps of the synthesis method of strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material in the summary of the invention.

[0026] In the first step, the thickness of the Ti layer is 5 nm, the thickness of the Pt electrode is 50 nm, and the deposition rate of the Ti layer or Pt electrode is 1 / sec; in the second step, pre-fire at 900°C, sinter at 1200°C, x=0.1; in the third step, the laser model is Lambda Physik LPX220icc, the pulse frequency is 5Hz, and it passes through a lens with a focal length of 45cm Focus the incident laser light on the strontium bismuth tantalate or strontium barium titanate target respectively in time, the distance between the substrate electrode and the target is 2cm, and the diameter between the substrate electrode and the target near the substrate electrode is 3cm The glow discharge ring, the substrate electrode is at 25 ℃, a...

Embodiment 2

[0028] Except for the following differences, the rest are the same as the synthesis method of the strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material in the summary of the invention.

[0029] In the first step, the thickness of the Ti layer is 15 nm, the thickness of the Pt electrode is 75 nm, and the deposition rate of the Ti layer or Pt electrode is 2 / sec; in the second step, pre-fire at 950°C, sinter at 1300°C, x=0.5; in the third step, the laser model is Lambda Physik LPX220icc, the pulse frequency is 10Hz, and passes through a lens with a focal length of 45cm Focus the incident laser light on the strontium bismuth tantalate or strontium barium titanate target respectively in time, the distance between the substrate electrode and the target is 10cm, and the diameter between the substrate electrode and the target near the substrate electrode is 9cm The glow discharge ring, the substrate electrode is heated to 160°C, a voltage of 400V is...

Embodiment 3

[0031] Except for the following differences, the rest are the same as the synthesis method of the strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material in the summary of the invention.

[0032] In the first step, the thickness of the Ti layer is 25 nm, the thickness of the Pt electrode is 100 nm, and the deposition rate of the Ti layer or Pt electrode is 3 / sec; in the second step, pre-fire at 1000°C, sinter at 1400°C, x=0.9; in the third step, the model of the laser is Lambda Physik LPX220icc, the pulse frequency is 15Hz, and it passes through a lens with a focal length of 45cm Focus the incident laser light on the strontium bismuth tantalate or strontium barium titanate target respectively in time, the distance between the substrate electrode and the target is 15cm, and the distance between the substrate electrode and the target near the substrate electrode is 15cm The glow discharge ring, the substrate electrode is heated to 300°C, a volta...

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Abstract

This invention relates to a SBT-BST heterogeneous dielectric material, its composition method and the application, in which, said material takes a Si chip as the substrate and is composed of multi-layer substrate electrode and multi-layer film depositing on it, the electrode is composed of a Si chip and SiO2, Ti and Pt films depositing on the surface of the Si chip orderly, the multi-layer film is formed by SBT and BST films of N periods stacked alternately, and N is 3-99. The composition method of said material includes: depositing the SBT and BST films on a Pt / Ti / SiO2 / Si multi-layer substrate electrode alternately with the PLD technology. The application of the material includes: taking the material as the substrate and preparing IC active device MOS transistors on the SBT-BST heterogeneous dielectric material multi-layer film of the substrate with the standard IC technics.

Description

technical field [0001] The present invention relates to a strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and its synthesis method and application, namely to a strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and its synthesis method and application , belongs to the technical field of microelectronics. Background technique [0002] As the core component of integrated circuit technology - MOS tube, has followed Moore's law for more than 40 years of continuous development. The technology of using silicon dioxide as the gate dielectric layer of MOS transistors has gone through seven logic process generations. However, as the volume of MOS tubes shrinks, the gate dielectric layer becomes thinner and thinner, and its thickness has gradually reached 1 / 45 of the length of the entire source-drain channel, only a few nanometers, that is, a few atomic layers thickness. This level of nanotechnology presen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/51H01L29/78H01L21/28H01L21/31H01L21/336
Inventor 杨平雄
Owner EAST CHINA NORMAL UNIV
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