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High temperature-resisting multiferroic aluminum nitride film and preparation method thereof

An aluminum nitride and nitrogen technology, applied in the field of materials, can solve the problems of poor high temperature resistance, no literature report on aluminum nitride, and low Curie temperature.

Active Publication Date: 2016-04-13
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single-phase multiferroic materials discovered so far have low Curie temperature and poor high temperature resistance, and it is urgent to find new materials with high Curie temperature and high working temperature.
At present, the literature has reported ferromagnetic or piezoelectric aluminum nitride materials, but no literature has reported that aluminum nitride has both ferroelectric and ferromagnetic properties, and the ferroelectric and ferromagnetic Curie temperature reaches 450 degrees Celsius. Electric field can modulate magnetism, and ferroelectricity can also be tuned by magnetic field

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Place strips of Cr and Ta (molar ratio 1:1) on high-purity Al target, and use radio frequency magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 / Si (002) plane, and Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , and then returned to normal pressure for annealing at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped aluminum nitride material provided by the present invention was obtained after the annealing was completed.

[0051] The molecular formula of the doped aluminum nitride materia...

Embodiment 2

[0054] Al, Mg, and Ca powders with a purity of 5 nines are pressed by Al 0.91 (Mg 0.5 Ca 0.5 ) 0.09 The proportion of mixed, sintered into the target material, under the nitrogen and argon atmosphere of 0.3Pa (partial pressure ratio of 1:3) using magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 / Si (002) plane, and Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , then returned to normal pressure and annealed at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped aluminum nitride material provided...

Embodiment 3

[0058] Press Al, Sc, Y powders with a purity of 5 nines to Al 0.85 (Sc 0.5 Y 0.5 ) 0.15 The proportion of mixed, sintered into the target material, under the nitrogen and argon atmosphere of 0.3Pa (partial pressure ratio of 1:3) using magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 The (002) surface of / Si is the epitaxial surface, and the Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , then returned to normal pressure and annealed at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped aluminum...

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Abstract

The invention discloses a high temperature-resisting multiferroic aluminum nitride film and a preparation method thereof. The molecular formula of the material is Alx(AyB1-y)1-xNz,wherein, x represents the molar fraction of Al, and the value of x is in a range of 0.85-0.95; and the value of y is in a range of 0.45-0.8. Aluminum nitride prepared with the method has both ferroelectric and ferromagnetic characteristics, and the Curie temperature of thealuminum nitridewithferroelectric and ferromagnetic characteristicsreaches 450 DEG C, so that magnetism can be modulated through an electric field, and ferroelectricity can also be regulated through a magnetic field.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a high-temperature resistant multiferroic aluminum nitride film and a preparation method thereof. Background technique [0002] At present, the rapid development of the field of information electronics has led people to devote themselves to the multifunctional development of materials to quickly store and process massive amounts of information, and multiferroic materials are one of the most concerned. However, the single-phase multiferroic materials discovered so far have low Curie temperature and poor high temperature resistance. It is urgent to find new materials with high Curie temperature and high working temperature. At present, the literature has reported ferromagnetic or piezoelectric aluminum nitride materials, but no literature has reported that aluminum nitride has both ferroelectric and ferromagnetic properties, and the ferroelectric and ferromagnetic Curie temperature reaches 4...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/58C23C14/06C01F7/00
Inventor 曾飞刘宏燕王光月潘峰
Owner TSINGHUA UNIV
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