125results about How to "Easy to integrate at scale" patented technology

The invention discloses a fully automatic charging system suitable for a plurality of electric vehicles and a realization method thereof. The system comprises a server, a mobile phone software, a control system, a ceiling, a slide rail, a slider, a robot arm, a fully automatic docking module and a column. The upright column is connected with the ceiling and forms a charging working space; The sliding rail is connected with the ceiling, the sliding block is connected with the sliding rail, and the sliding block slides on the rounded rectangular sliding rail driven by the servo motor; The slideris connected with the manipulator arm and drives the manipulator arm to move along the path of the slider rail. The slider and the manipulator are driven by servo motor to complete the axial rotationof the manipulator. Servo motor drives all joints of the manipulator to complete the flexion and extension of the manipulator. The robot arm is connected with the fully automatic docking module. Thefully automatic charging system of the invention can realize fully automatic charging operation of an electric vehicle, reduce manual operation, and reduce the risk of electric shock of a person.

The invention discloses a control method applicable to a resistance changing memory resistor of a nerve cell circuit. According to the control method disclosed by the invention, two ports of a resistance changing memory resistor are respectively connected with a drain terminal and a source terminal of an MOS (metal oxide semiconductor) transistor, a parallel connection structure is formed, the parallel connection structure is respectively connected with a front nerve cell and a rear nerve cell, and a gate voltage is added on a gate terminal of the MOS transistor. according to the invention, the resistance changing memory resistor is connected with the MOS transistor in parallel, in a study state, the resistance changing memory resistor is set to a preset resistance value by adjusting the gate voltage of the MOS transistor; and in a calculation state, channel resistance of the MOS transistor is controlled by virtue of the gate voltage, thus resistance value of the parallel connection structure of the resistance changing memory resistor and the MOS transistor is accurately controlled, and the resistance of the parallel connection structure is rapidly and accurately adjusted. Area of the MOS transistor can be small, thus being beneficial to large-scale integration; meanwhile, the gate voltage of the MOS transistor is controlled, change of the resistance of the resistance changing memory resistor can be realized, and resistance floating can be accurately controlled.

The invention provides a PFC (power factor correction) control method with high input power factor and a control circuit thereof. The method comprises the steps of controlling a switching tube to be switched on and switched off according to the principle of leading impulse area to be equivalent, and leading input inductive current and sinusoidal half-wave current to have the equivalent impulse area in each switching period, thereby realizing the high power factor (PF); furthermore, the higher the switching frequency, the closer to 1 the PF value is. In the control circuit, a circuit topological structure of a Boost converter and a control circuit for realizing a variable duty ratio sequence jointly constitute a PFC stage of a commonly used LED (light-emitting diode) driving power supply, the front stage of the PFC stage is connected with the output end of a non-controllable rectifier bridge of a single-phase diode via an input filter capacitor, the back stage of the PFC stage is connected with a DC / DC (direct current / direct current) stage of the commonly used LED driving power supply via an output filter inductor and an output filter capacitor. By adopting the PFC control method, not only the very high input power factor can be realized, but also output voltage ripple can be reduced; furthermore, the control circuit is simple and easy to realize an analog circuit, thereby being conductive to large-scale integration.

The present invention discloses a conformal light-sensing structure integrated digital microfluidic chip which can monitor a chemical reaction between droplets carrying different components in a digital microfluidic chip in real-time, in the detection application field of digital microfluidic biochemical detection on consumption for a low level sample. According to the chip disclosed by the present invention, on the basis of no change of a current structure and property of electrowetting, a subwavelength scale optical sensing structure is embedded between electrowetting adjacent electrode gaps; a co-planar conformal structure with a hydrophobic layer of the electrowetting structure is kept in structure; by detecting a change of a light-sensing structure light field which is caused by a small change in a refractive index occurring during a process of the droplets reaction, determination for composition and location of a microdroplet is realized. Compared with light sensing composed of a conventional capacitor, an electrical impedance sensor, an electrochemical sensor and a discrete element, the chip disclosed by the present invention has the advantages of being simple in structure, standard CMOS compatible process which is easier to integrate, low in cost and high in accuracy. In addition, a characteristic that a sensing structure is conformal with an electrowetting structure enables a sensing function to be added without reducing the electrowetting performance.

The invention provides a novel self-adaptive optical method and a system of a wavefront-free sensor. The method comprises the following steps of: establishing a initial wavefront; constructing a coupling efficiency evaluation function; acquiring a tilt compensation signal; and reconstructing wavefront matrix information; determining the optimal position of a guide endoscope; and adjusting a reconstructed wavefront matrix and the tilt compensation signal by a control loop. The system mainly comprises an optical receiving aperture lens (1), a light beam collimation lens (2), a first converging lens (3), a spatial light modulator, a collimation lens (4), the guide endoscope, a second converging lens (5) and a photodetector (6) which are sequentially connected by an optical path signal. The system is applied to high-speed spatial optical communication or optical imaging. The invention improves the reliability of a communication system, accords with the characteristics of the free spatial optimal communication system, has strong practicability and is convenient to popularize and apply.

The invention discloses a flexible pressure sensor based on a hollow sphere structure, and a preparation method thereof. The sensor is of a sandwich structure and is characterized in that an electricconduction fabric is taken as an upper electrode and a lower electrode and a porous electric conduction compound film which is used as a pressure sensitive unit is arranged between the two electrodes;the porous electric conduction compound film is characterized in that silicon rubber is taken as a substrate, a thermal expansion microsphere is taken as an elastic element and carbon black and a multi-wall carbon nanotube are take as an electric conduction material. The pressure sensor disclosed by the invention has the characteristics of low cost, high elasticity, wide measuring range, quick response characteristics, durability and the like, and is simple in preparation technology, easy in industrialization and high in market value and industrialization potential.

The invention discloses a non-blocking 2 * 2 optical switching node based on embedded type silicon substrate micro-ring resonant cavities and belongs to the technical field of optical fiber communication. The non-blocking 2 * 2 optical switching node comprises two embedded type silicon substrate micro-ring resonant cavities which are arranged in a central-symmetry mode and are made of silicon wafers on insulators, and the resonant cavities are of an S-shaped structure. Two opposite U-shaped waveguides of the embedded type silicon substrate micro-ring resonant cavities form a directional coupler in a coupling mode. The outer sides of the two U-shaped waveguides are respectively provided with a micro-ring resonator. The optical switching node comprises four input-output switching ports which form two groups. Under crossing and shoot-through states, actually-measured extinction ratios reach 44.7 dB and 38.0 dB respectively, crosstalk values are lowered to -37.5 dB and -45.2 dB respectively, and for 10 Gb / s and 12.5 Gb / s non-return-to-zero (NRZ) signals, an error-code-free node switching function can be achieved.

The invention discloses a solid oxide fuel cell stack array and a power generation system thereof. The solid oxide fuel cell stack array comprises a support body and a cell stack group, wherein the support body is of a hierarchical structure, and at least comprises an upper tray and a lower tray; the cell stack group is carried by the lower tray; the upper tray is placed on the cell stack group; the cell stack group comprises a plurality of cell stacks; the cell stacks are horizontal; fastening pieces are arranged among the cell stacks. The solid oxide fuel cell stack array is characterized in that support columns are arranged between the upper tray and the lower tray to construct the support body; the fastening pieces on the left and right sides of the cell stacks are set as movable blocks and fixed blocks; the support columns are provided with screw holes; force application screw rods are combined with the support columns through the screw holes, and the inner ends of the force application screw rods are pressed against the outer surface of respective movable block; the strokes of the force application screw rods are adjusted through rotation of the force application screw rods, so that the side faces of the movable blocks generate pressures on adjacent cell stacks, and the cell stack group is pressed and fastened. The structure is convenient to implement, and is stable and effective.

The invention relates to the field of integrated circuits and neural networks, and provides a programmable threshold value circuit which is simple in structure, low in cost, little in power consumption and convenient to integrate to overcome the defects that in the prior art, circuits applied to the neural networks are large in the number of tubes, high in cost, high in power consumption and not convenient to integrate. The programmable threshold value circuit comprises a nerve cell field effect tube, the nerve cell field effect tube comprises a plurality of control grids and further comprises weight adjusting circuit units, the number of the weight adjusting circuit units is the same as the number of the control grids of the nerve cell field effect tube, the weight adjusting circuit units are connected with the control grids one to one, the weight adjusting circuit units are used for adjusting synaptic weights of the nerve cell field effect tube, and the nerve cell field effect tube is an N type nerve cell field effect tube or a P type nerve cell field effect tube. The programmable threshold value circuit is suitable for artificial neural networks.

The invention discloses a method for constructing an organic liquid crystal molecule single-crystal micro-wire patterned array by a nanoimprint technology. The method is divided into two parts; one part is a preparation of an imprint template; the other part is a preparation of an imprint base; the preparation of the imprint template comprises the following steps: firstly, cleaning a SiO2 / Si wafer base; secondly, carrying out positive photoresist photoetching and developing on the base to obtain an array pattern; thirdly, etching the photoetched SiO2 / Si wafer base by a reactive ion etching machine; fourthly removing the photoresist and obtaining an uneven template periodically arranged; fifthly spinning perfluorinated resin on the SiO2 / Si wafer base; and finally heating to finish the preparation of the imprint template; the preparation of the imprint base comprises the following steps: firstly, taking one cleaned SiO2 / Si wafer; secondly, lifting an organic small molecule membrane from the base on a step-by-step precision lifting platform to finish the preparation of the imprint base; the imprint template covers the base; certain pressure is applied; the imprint template is heated to the melting points of organic small molecules; heating is stopped after the temperature is kept constant for 15 minutes; the imprint template is cooled to room temperature; and the base is taken out, so as to obtain the periodic large-area organic small-molecule single-crystal micro-wire patterned array.

The invention discloses a graphene terahertz absorber with an adjustable broadband. The absorber is composed of a plurality of absorber units, each absorber unit is sequentially provided with an all-metal film (1), a dielectric film (2) and patterned single-layer graphene (3) from bottom to top, and the three layers of structures are attached to one another. The reflection spectrum of the structure is observed by calculation adopting a finite element method to achieve the perfect absorption in a terahertz broadband. The graphene terahertz absorber has the advantages of strong absorption, insensitivity to polarization, a simple structure, convenience in processing and the like, and the chemical potential and the surface conductivity of the graphene can be changed by changing external bias voltage due to the unique electrical characteristics of the graphene, so that the broadband strong absorption of incident terahertz waves can be adjusted in a large range, and the application requirements in the aspect of terahertz absorption can be met.

The invention discloses a method for constructing an organic micron linear array with a form board assisting in volatilization induced self-assemble. The method comprises the following steps that (1) a substrate is washed through cleaning fluid in an ultrasonic mode, then the substrate is immersed in the piranha solution and processed by an oxygen plasma, and the surface of the substrate is made to have strong wettability; (2) the form board is constructed on the substrate; (3) the micron linear array is grown on the form board, the pre-processed form board is inserted in the organic solution for growth, and through volatilization induced self-assemble, the large-area highly-aligned organic micron linear array is obtained. The method is of great significance to manufacturing of large-area high-performance photoelectron micro-nano devices based on organic optoelectronic materials and further achieving of micro-nano device integration.

The invention provides a superlattice memristor functional layer material, a memristor unit comprising the superlattice memristor functional layer and a manufacturing method thereof. The superlatticememristor functional layer material is a laminated structure formed by alternately stacking at least a first metal oxide layer and a second metal oxide layer in a first plane direction. In the invention, migration barriers of oxygen ions of two binary metal oxides are different so that a resistance state of the memristor can be stably and slowly changed under certain conditions, a modulation effect on an on-off state of an oxygen vacancy conductive filament is realized, and stability and consistency of the memristor are improved. Moreover, conductivity of the memristor can be continuously changed along with an external electric field so that a synaptic characteristic that the conductivity is continuously adjustable is realized, and synaptic linearity of cranial nerve-like morphology calculation is improved. The material, the unit and the method are of great significance to hardware implementation of storage fusion calculation and neuromorphic calculation.

The invention provides a control swap gate optical logic device based on micro-ring resonators. The control swap gate optical logic device is characterized in that the control swap gate optical logic device is composed of four micro-ring resonators MRR made of a semiconductor material on an insulator and five Y-branch couplers, wherein three inputs are electrical signals to be operated and one continuous optical signal located at an operating wavelength position, an output result is an optical signal obtained after control swap gate calculation is conducted on the electrical signals, the optical signal can be transmitted in an optical fiber and directedly undergoes next-stage optical information processing. The control swap gate optical logic device is provided with the three electric pulse sequence inputs to be calculated, and an output is an optical pulse sequence obtained after calculation. A control swap gate optical logic device manufacturing process is completely compatible with a COMS process, so that the device is small in size, high in speed, low in power consumption and convenient to integrate and is hopeful to play the important role in a photon computer.

The invention provides a silicon-based optical Peres gate reversible logic device based on a micro-ring resonator, and belongs to the technical field of optical logic calculation. The device comprisesfive micro-ring resonators and two Y-branch couplers. According to the invention, the optical Peres gate reversible logic device has three to-be-calculated electric pulse sequence inputs, and the output is calculated light pulse sequence; and the manufacturing process of the device is completely compatible with a COMS process, so that the device is small in size, high in speed, low in power consumption and convenient to integrate, and is expected to play an important role in a photon computer.

The invention relates to a narrow-band infrared detection chip and a manufacturing method thereof. The manufacturing method comprises the following steps that a monocrystalline wafer is selected and plated with gold with a certain thickness in an evaporation mode; surface deposition of SiO2 with a certain thickness is carried out with PECVD equipment; PMMA exposure glue is smeared in a spinning mode; a nanorod array of a cross structure is designed, the dimension parameter of the nanorod array is precisely controlled, and the designed structure is transferred to the PMMA exposure glue through electronic beam exposure equipment; exposure treatment is carried out, and gold evaporation is carried out with electronic beam evaporation equipment; soaking with a chemical solution is carried out, the PMMA exposure glue is removed, and the nanorod array of the cross structure can be presented on the wafer at the moment. According to the narrow-band infrared detection chip and the manufacturing method thereof, narrow-band infrared detection is achieved by introducing the parameter optimization design of the optical nanometer structure, the manufacturing technology is simple and reliable, and promotion and popularization of the technology are better promoted.

The invention relates to a resonant cavity type terahertz wave modulator and a preparation method thereof, used for modulation of terahertz wave. The resonant cavity type terahertz wave modulator is composed of a reflecting layer, a substrate layer, a conducting layer, a metal grating and an electrode; the various layers are arranged in parallel, and connected tightly, wherein the reflecting layeris a metal coating; the substrate layer provides physical support for the device; the conducting layer is positioned below the metal grating; the metal grating has a sub-wavelength structure; and theelectrode is arranged on the conducting layer, and used for being electrically connected with a power supply. The resonant cavity type terahertz wave modulator provided by the invention is that: theelectrical conductivity of the conducting layer between the metal gratings is changed in a voltage regulation manner; simultaneously, with the help of the non-oscillation electric field enhancement effect of the metal grating and a resonant cavity structure, depth and multi-frequency modulation on terahertz wave can be realized; disadvantages or deficiencies in the prior art are solved; and the modulator has the advantages of being deep in modulation depth, rapid in modulation speed, low in energy consumption, modulated in multiple frequency band and simple in manufacturing process.

The invention provides a reversible optical exclusive or logic device based on microring resonators. The reversible optical exclusive or logic device consists of two microring resonators and a Y-shaped branch coupler, two electrical pulse sequence inputs to be calculated and optical pulse train outputs subjected to exclusive or calculation; the inputs and the outputs are in one-to-one correspondence. A manufacturing process of the reversible optical exclusive or logic device provided by the invention is completely compatible with a COMS (Complementary Metal Oxide Semiconductor) process, so that the device is small in size, quick in speed, low in power consumption and convenient for integration, and is expected to play an important role in photon computers.

The invention discloses a terahertz adjustable wave absorber based on Dirac semimetal, which belongs to the field of terahertz metamaterial wave absorption, and realizes perfect absorption in a terahertz frequency band. The wave absorber is characterized in that the wave absorber unit sequentially comprises a layer of all-metal film (1), a layer of dielectric film (2) and a patterned Dirac semimetal layer (3) at the top sequentially from bottom to top, and the three layers of structures are attached to one another. The metal film layer adopts gold or silver conductors and the like, and the intermediate dielectric layer adopts a low dielectric constant material. Through time domain finite difference method simulation calculation, the reflection spectrum of the structure is observed, and perfect absorption in the terahertz frequency band is achieved. The metasurface wave absorber has the advantages of being strong in absorption, insensitive to polarization, simple in structure, convenient to machine and the like, due to the fact that the Fermi level of Dirac semimetal is adjustable, the performance that the resonant frequency of the wave absorber can be dynamically adjusted can be achieved, and the requirement for application in the terahertz absorption aspect can be met.

The invention discloses a broadband micro nano two-dimensional multitooth grating trap filter, for the purpose of improving the photoelectric conversion efficiency of a silicon solar film battery. The structure is as follows: gratings periodically changing along two directions are arranged at the upper surface of a silicon active layer, each of the gratings in the two directions has two teeth, and the teeth are non-uniformly distributed in the two directions of the gratings. According to the invention, through adjusting structural dimensions of the micro nano two-dimensional multitooth gratings and positions of the grating teeth, by use of a leaky-mode resonance effect, the device has the advantages of high transmission efficiency, large bandwidth and wide angle spectrum for transverse electric wave (TE wave) and transverse magnetic wave (TM wave) incident light.

The invention provides a SRAM circuit based on a PNPN structure. The circuit comprises a plurality of bit lines, a plurality of word lines, a plurality of memory units respectively connected with every bit line and word line, a plurality of potential controlling devices connected in series at input terminals of the bit lines, and a plurality of inverters connected in series at output terminals of the bit lines. The circuit is characterized in that the memory units are double-terminal devices with PNPN diode structures. According to the SRAM circuit based on the PNPN structure, the PNPN diodes are adopted as the memory units, such that space occupation is low, power consumption is low, and SRAM large-scale integration and circuit integral performance improvement can be promoted. With the unique reversal characteristic of the PNPN diodes, logical values stored in the memory units can be conveniently rewritten by controlling the voltage differences of two terminals. Therefore, advantages of fast SRAM write operation and low error rate are provided. Also, because a resistor or MOSFET is connected at each bit line input terminal, and the inverters are connected at the output terminals, the reading speed of the SRAM circuit is high.

The invention discloses a level shifting circuit comprising a phase inverter and a level shifting unit; the level shifting unit comprises a first NMOS transistor, a second NMOS transistor, a first PMOS transistor, a second PMOS transistor and a confrontation isolating circuit; the grid of the NMOS transistor is coupled with a low-voltage signal output end; the low-voltage signal output end is coupled with the grid of the second NMOS transistor via the phase inverter; the drain of the first NMOS transistor serves as a first output end; the drain of the second NMOS transistor serves as a secondoutput end; the confrontation isolating circuit is coupled between the PMOS transistors and the NMOS transistors of the level shifting circuit, and applicable to isolating confrontation between the coupled PMOS transistors and NMOS transistors during the process that the level shifting circuit performs level shifting. With the application of the scheme of the circuit, the time of confrontation between the PMOS transistors and the NMOS transistors during the level shifting process can be effectively shortened, and the penetrating current generated during the level shifting process can be reduced; therefore, the level shifting speed is improved and the power consumption is reduced, the application requirements on high speed, low voltage and low power consumption are met.

The invention discloses a manufacturing method of biological neural synapsis bionic electronic devices and products thereof. The manufacturing method includes (1) sequentially forming a conductive layer and an insulation layer on a substrate; (2) forming a plurality of upper electrodes which are mutually isolated on the insulation layer; (3) grounding the conductive layer, applying first pulse on the upper electrodes and applying second pulse on the upper electrodes; (4) etching the conductive layer and the insulation layer to remove the area not covered by the upper electrodes to obtain the biological neural synapsis bionic electronic devices which are isolated mutually. By subjecting the electrodes / electric insulation films / electrode lamination structures to two-step voltage treatment, microstructure and electric performance of the insulation layer are improved, and when the manufactured biological neural synapsis bionic electronic devices simulate biological neural synapsis function, energy consumption of single synapsis can be lowered to 10-5 fj, so that ultralow energy consumption is realized, and massive integration of the biological neural synapsis bionic electronic devices is facilitated.

The invention discloses an ultra broadband spectrum light-sensitive material, and the material contains Eu-Sb-Te ternary telluride crystals or Eu-Bi-Te ternary telluride crystals. The invention also discloses a photoelectric detector employing the material, and the detector comprises a light sensing unit which can carry out photoelectric conversion. Two ends of the light sensing unit are respectively provided with a metal electrode, and the material of the light sensing unit contains the former ultra broadband spectrum light-sensitive material. According to the invention, the ultra broadband spectrum light-sensitive can achieve the photoelectric conversion in the ranges of ultraviolet, visible, infrared and terahertz bands, and is wide in application range of temperature. The photoelectric detector can achieve the light detection in the ranges of ultraviolet, visible, infrared and terahertz bands, and the working temperature section is from 77K to 400K. In addition, the photoelectric detector is simple in structure, facilitates large-scale integration through combining with the crystal growth technology and the film preparation technology, is convenient to make, and remarkably reduces the preparation cost under the condition that the performance of the detector is effectively improved.

The present invention discloses a method for making movable micromechanical structure monolithic integration on the unicrystalline silicon substrate. Said invention adopts the processes of dense boron diffusion, photoetching, deep reaction ion etching and selective wet etching to make the movable floating and fixed microstructure on same single-crystal silicon wafer so as to attain the goal of making movable micromechanical monolithic integration. Said invention can make monolithic integration and large-scale integration, and is suitable for making several movable microstructure devices of optical switch, resonator and G-meter, etc.

The invention discloses a salt concentration gradient driven nanofluid power generation device and preparation and application thereof. The nanofluid power generation device comprises a nano-channel and a first liquid channel and a second liquid channel which are respectively located at the two ends of the nano-channel and communicated with the nano-channel, wherein the first liquid channel is used for accommodating the first liquid, and the second liquid channel is used for accommodating the second liquid. The nano-channel is used for converting chemical potential energy into electric energyby utilizing the difference in salt concentration between the first liquid and the second liquid and outputting electric energy through the cooperation of the first electrode and the second electrode.The key nano-channels and other structures cooperating with the nano-channels in the nanofluid power generation device are improved based on the specific energy conversion principle of converting thechemical potential energy of the salt concentration difference into the electric energy, thereby realizing power generation driven by the salt concentration gradient, in particular the use of seawater-freshwater salt concentration for power generation.

The invention provides an ultraviolet light detecting transistor based on a graphene / C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene / C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene / C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene / C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene / C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.

The invention relates to a method for constructing a large-area, flexible, wearable organic nano-wire field-effect transistor array by using an adhesive tape as a substrate. The method comprises: (1), carrying out nano wire growth; to be specific, preparing a template and growing a nano-wire array on the template in a self-assembling mode; (2), manufacturing a substrate; to be specific, carrying out sacrificial layer plating on sacrificial substrate surface and manufacturing a gate electrode, a source electrode, and drain electrode on the sacrificial layer; (3), carrying nano wire transferring; to be specific, laying an adhesive tape on the template with the grown nano-wire array to enable the nano-wire array to be attached to the transparent adhesive tape, stripping the adhesive tape, and transferring and attaching the adhesive tape with the attached nano-wire array to the substrate manufactured at the step (2); and constructing a device; to be specific, separating the sacrificial layer from the sacrificial substrate by using the characteristic that the adhesive power between the adhesive tape and the sacrificial layer is larger than the adhesive power between the sacrificial substrate and the sacrificial layer, and transferring the sacrificial layer into a sacrificial layer etching solution for etching, thereby obtaining a transistor array using the adhesive tape as the substrate.

The invention discloses a time-analog switching circuit and a single photon flight time measuring method. The time-analog switching circuit comprises a signal input logic unit, a timing unit, a voltage holding unit and a read out unit; the signal input logic unit converts a photon signal into a logic electrical level, and the input end of the signal input logic unit correspondingly receives the photon signal, a start signal and a stop signal, and the output end of the signal input logic unit is connected with the input end of the timing unit; the timing unit includes a current mirror structureproviding a stable charging current, a current mirror structure providing a current source and a timing capacitor, and a voltage of an electrode plate of the timing capacitor linearly increases withtime after the timing capacitor starts counting; the voltage holding unit is used for holding the voltage of the electrode plate of the timing capacitor, the input end of the voltage holding unit is connected with the output end of the timing unit, the output end of the voltage holding unit is connected with the read out unit, and the read out unit reads out a voltage signal of the electrode plate. According to the time-analog switching circuit and the single photon flight time measuring method, the manufacturing process is compatible with the CMOS process, the manufacturing cost is low, and the rate of finished products is high; and meanwhile, the time-analog switching circuit has the advantages of high filling factors, high resolution and a large measuring range.

The invention provides a three-valued optical reversible logic device based on microring resonators. The three-valued optical reversible logic device is composed of the four microring resonators and two Y branch couplers. Three electric pulse sequences to be calculated are input into the three-valued optical reversible logic device, and calculated optical pulse sequences are output. The manufacturing process of the three-valued optical reversible logic device is completely compatible with a COMS process, and therefore the device is small in size, high in speed, low in power consumption and convenient to integrate, and advantageously plays an important role in photon computers.