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Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble

A volatilization induction and self-assembly technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the electrical performance of devices and increasing material consumption, and achieve simple and easy operation, reduce material consumption, and accurate The effect of positioning

Active Publication Date: 2013-11-27
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will undoubtedly significantly increase material consumption and seriously affect the electrical performance of the device

Method used

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  • Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble
  • Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble
  • Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] A method for template-assisted volatilization-induced self-assembly to construct an organic micron wire array, comprising the following steps:

[0069] 1) Cleaning of silicon wafer: take a piece of SiO 2 / Si sheet, where SiO 2 The thickness of the layer is 300nm, followed by acetone, ethanol, water, ultrasonic cleaning for 10 minutes each, rinse with a large amount of ultrapure water after each ultrasonic wave, then immerse in piranha solution, and treat with oxygen plasma for 10 minutes, and finally wash with a large amount of ultrapure water Rinse with water and dry with nitrogen, where the piranha solution is a strong oxidizing solution of concentrated sulfuric acid: hydrogen peroxide = 3:1, which can convert SiO 2 The organic matter on the surface is oxidized and SiO is greatly increased 2 The number of hydroxyl groups on the surface increases its wettability.

[0070] 2) Photolithography: the cleaned SiO 2 / Si sheet is spin-coated with a certain thickness of ne...

Embodiment 2

[0075] A method for template-assisted volatilization-induced self-assembly to construct organic micro-wire patterns, comprising the following steps:

[0076] 1) Cleaning of silicon wafer: take a piece of SiO 2 / Si sheet, where SiO 2 The thickness of the layer is 300nm, followed by acetone, ethanol, water, ultrasonic cleaning for 10 minutes each, rinse with a large amount of ultrapure water after each ultrasonic wave, then immerse in piranha solution, and treat with oxygen plasma for 10 minutes, and finally wash with a large amount of ultrapure water Rinse with water and dry with nitrogen, where the piranha solution is a strong oxidizing solution of concentrated sulfuric acid: hydrogen peroxide = 3:1, which can convert SiO 2 The organic matter on the surface is oxidized and SiO is greatly increased 2 The number of hydroxyl groups on the surface increases its wettability.

[0077] 2) Photolithography: the cleaned SiO 2 / Si sheet is spin-coated with a certain thickness of neg...

Embodiment 3

[0081] A method for template-assisted volatilization-induced self-assembly to construct organic micro-wire patterns, comprising the following steps:

[0082] 1) Cleaning of silicon wafer: take a piece of SiO 2 / Si sheet, where SiO 2 The thickness of the layer is 300nm, followed by acetone, ethanol, water, ultrasonic cleaning for 10 minutes each, rinse with a large amount of ultrapure water after each ultrasonic wave, then immerse in piranha solution, and treat with oxygen plasma for 10 minutes, and finally wash with a large amount of ultrapure water Rinse with water and dry with nitrogen, where the piranha solution is a strong oxidizing solution of concentrated sulfuric acid: hydrogen peroxide = 3:1, which can convert SiO 2 The organic matter on the surface is oxidized and SiO is greatly increased 2 The number of hydroxyl groups on the surface increases its wettability.

[0083] 2) Photolithography: the cleaned SiO 2 Spin-coat a certain thickness of positive photoresist AR...

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Abstract

The invention discloses a method for constructing an organic micron linear array with a form board assisting in volatilization induced self-assemble. The method comprises the following steps that (1) a substrate is washed through cleaning fluid in an ultrasonic mode, then the substrate is immersed in the piranha solution and processed by an oxygen plasma, and the surface of the substrate is made to have strong wettability; (2) the form board is constructed on the substrate; (3) the micron linear array is grown on the form board, the pre-processed form board is inserted in the organic solution for growth, and through volatilization induced self-assemble, the large-area highly-aligned organic micron linear array is obtained. The method is of great significance to manufacturing of large-area high-performance photoelectron micro-nano devices based on organic optoelectronic materials and further achieving of micro-nano device integration.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to the preparation of top-down periodic wetting / anti-wetting templates, bottom-up solvent volatilization self-assembly, anti-wetting and fingering convection. Background technique [0002] Currently, the top-down processes commonly used in the industrial production of semiconductor devices require huge production lines and large processing equipment under ultra-clean conditions. This results in wasted material and increases the production and development costs of the device. A preparation method that achieves the lowest consumption of materials and the lowest use of energy is undoubtedly crucial to the sustainable development of the entire society. Many research groups have tried to use the template-assisted physical vapor transfer method to prepare small molecule organic micro-nano single crystal structures. However, this method requires materials with high therma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
Inventor 揭建胜张秀娟邢玉良
Owner SUZHOU UNIV
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