244 results about "Microwave oscillators" patented technology

An apparatus for determining a fluid cut measurement of a multi-liquid mixture includes a first device configured to sense at least one parameter of the mixture to determine a fluid cut of a liquid in the mixture. A second device is configured to determine a concentration of gas in the mixture in response to a speed of sound in the mixture; and a signal processor is configured to adjust the fluid cut of the liquid using the concentration of the gas to determine a compensated fluid cut of the liquid. The parameter of the mixture sensed by the first device may include a density of the mixture (e.g., by way of a Coriolis meter), a permittivity of the mixture (e.g., by way of a resonant microwave oscillator), or an amount of microwave energy absorbed by the mixture (e.g., by way of a microwave absorption watercut meter). The signal processor may employ different correction factors depending on the type of fluid cut device used. The second device may include a gas volume fraction meter.

Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance (GMR) contact is biased below a critical value, the device may function as a microwave-frequency selective amplifier. If the GMR contact is biased above the critical value, the device may function as a microwave oscillator. A plurality of low- and high-magnetoresistance contact pairs may be induced to oscillate in a phase-locked regime, thereby multiplying output power. The frequency of operation of these devices will be tunable by the external magnetic field, as well as by the direct bias current, in the frequency range between 10 and 100 GHz. The devices do not use semiconductor materials and are expected to be exceptionally radiation-hard, thereby finding application in military nanoelectronics.

Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance contact is biased below a critical value, the device may function as a microwave-frequency selective amplifier. If the low-magnetoresistance contact is biased above the critical value, the device may function as a microwave oscillator. A plurality of low- and high-magnetoresistance contact pairs may be induced to oscillate in a phase-locked regime, thereby multiplying output power. The frequency of operation of these devices will be tunable by the external magnetic field, as well as by the direct bias current, in the frequency range between 10 and 100 GHz. The devices do not use semiconductor materials and are expected to be exceptionally radiation-hard, thereby finding application in military nanoelectronics.

The invention discloses a stable photoelectric oscillator. The stable photoelectric oscillator comprises a laser device, an electro-optical modulator, a long optical fiber, a photoelectric detector, an amplifier, an electric band-pass filter, an electrically-controlled microwave phase shifter, a high-stability microwave source, a 2*1 wave combiner or directional coupler, a first 1*2 power divider or directional coupler, a second 1*2 power divider or directional coupler, a third 1*2 power divider or directional coupler and a phase locking control module, wherein the phase locking control module comprises a frequency mixer, an electric low pass filter and a servo control module, the output end of the frequency mixer is connected to the input end of the electric low pass filter, and the output end of the electric low pass filter is connected to the input end of the servo control module. According to the stable photoelectric oscillator, an electric injection of the external high-stability microwave source and a phase locking control mechanism are added based on a traditional single-loop OEO structure. Compared with the prior art, the stable photoelectric oscillator has the advantages that insertion loss of an optical link in a resonant cavity is not increased, the high signal to noise ratio of the photoelectric resonant cavity is maintained, and the structural complexity of the stable photoelectric oscillator is lower than that of an existing scheme. The stable photoelectric oscillator is easy to obtain.

A microwave tuned oscillator utilizing a ferromagnetic thin film resonator comprises: a) a microwave resonator (1) comprising a ferromagnetic thin film resonance plate (110) such as a disc-shaped YIG crystal placed on a microwave integrated circuit (11), such as a half-wavelength strip-line resonator, b) bias magnetic field means (12) for applying a bias magnetic field perpendicular to the ferromagnetic thin film resonance plate (110), c) an active element for oscillation (21), a reactive feedback element (24) and a load (23, 25) controlled by the microwave properties of the ferromagnetic thin film resonance plate (110) through a load feedback loop (4), and d) an overall positive feedback loop (3, 14, 15) connected between the active element for oscillation (21) and the microwave resonator (1) to cause a sustained oscillation to build up at one of parametrically excited resonances of the ferromagnetic thin film resonance plate (110).

An ignition and chemical reaction accelerator and flame stabilizer and a high-performance speed-type internal combustion engine using this device are provided, whereby ignition and the spreading and holding of flames can be dramatically improved in a gas turbine, a ram machine, a rocket engine, or another speed-type internal combustion engine. An ignition and chemical reaction accelerator and flame stabilizer of a speed-type internal combustion engine comprises a spark plug (110) for preparing charged particles in a predetermined location in a combustor (104) of the speed-type internal combustion engine, and a microwave oscillator (116) and antenna (112) for inducing plasma with a working fluid in the combustor as a starter material by irradiating the charged particles and their surrounding vicinity with microwave pulses; wherein a region in which sufficient conditions for performing combustion are met is formed in the combustor by supplying an active chemical species produced from the working fluid by the effect of the plasma.

An ignition apparatus for an internal combustion engine is small in size and has high reliability capable of withstanding or enduring a vibration environment of a vehicle to which the ignition apparatus is installed. The ignition apparatus includes a spark plug that has its tip end portion presented in the interior of a cylinder of an internal combustion engine main body, a high voltage generation power supply that serves to apply a high voltage to the spark plug, a microwave oscillation device that has an amplifying element for generating a microwave, and a microwave antenna that is mounted on the spark plug, irradiates the micro wave generated from the microwave oscillation device to the interior of the cylinder, thereby forming a plasma generation region around discharge electrodes of the spark plug. The microwave oscillation device is made into a solid state.

The invention discloses a magnetic element based on a spin hall effect, a microwave oscillator and a manufacturing method thereof. The magnetic element comprises a non-magnetic metal film layer (ML) and a magnetic film layer (FL), wherein the non-magnetic metal film layer (ML) can induce electrons to generate spin currents, and the magnetic film layer (FL) is formed on the non-magnetic metal film layer (ML) and can balance magnetization. The microwave oscillator comprises the magnetic element, the magnetic element is formed on a substrate layer (SL), and metal electrodes (EL) are formed on the magnetic element. The microwave oscillator can be formed by using a thin film deposit technology, a photoetching and / or etching technology and the like. The structure of the magnetic element is beneficial to reducing the noise of the microwave oscillator, device microwave frequency is wide in adjustable range under the effect of impressed currents, and output microwave signals are excellent in performance. The microwave oscillator has the advantages of being small in size, simple in structure and the like, and is simple in manufacturing technology, compatible with traditional nano-meter processing technologies, easy to manufacture in a mass mode and capable of serving as a microwave source to be widely applied in the fields of electronics, communication and the like.

An apparatus for determining a fluid cut measurement of a multi-liquid mixture includes a first device configured to sense at least one parameter of the mixture to determine a fluid cut of a liquid in the mixture. A second device is configured to determine a concentration of gas in the mixture in response to a speed of sound in the mixture; and a signal processor is configured to adjust the fluid cut of the liquid using the concentration of the gas to determine a compensated fluid cut of the liquid. The parameter of the mixture sensed by the first device may include a density of the mixture (e.g., by way of a Coriolis meter), a permittivity of the mixture (e.g., by way of a resonant microwave oscillator), or an amount of microwave energy absorbed by the mixture (e.g., by way of a microwave absorption watercut meter). The signal processor may employ different correction factors depending on the type of fluid cut device used. The second device may include a gas volume fraction meter.

The invention provides a fabrication plant for high density plasma, which comprises a processing room, a reaction gas refiller, an inductively coupled plasma antenna, a wave guide and an annular transmitting tube. A susceptor used for supporting the objects for processing is arranged within the processing room. A dielectric window is arranged on the processing room. The reaction gas refiller injects the reaction gases into the processing room. The inductively coupled plasma (ICP) antenna is arranged on the dielectric window to be positioned in the center of the dielectric window, and transfers the radio-frequency power from a radio-frequency power supply into the processing room. The wave guide guides the microwave generated by a microwave oscillator. The annular transmitting tube is arranged on the dielectric window to surround the inductively coupled plasma antenna, connected with the wave guide, and radiates microwave into the processing room via a plurality of incisions formed in the soleplate of the annular transmitting tube.

The invention discloses a magnetic random access memory unit based on Rashba effect. The magnetic random access memory unit comprises a magnetic multilayer film memory unit and a bit-writing line. The magnetic random access memory unit is characterized in that the magnetic multilayer film memory unit comprises a substrate, a non-magnetic layer, a core functional layer zone and a covering layer from bottom to top; the core functional layer zone comprises a lower magnetic layer, a medium layer and a upper magnetic layer from bottom to top; the bit-writing line is connected with the non-magneticlayer so that write current flows through the non-magnetic layer transversely and the magnetic torque of the lower magnetic layer is reversed, thus writing data. The invention also provides a programmable magnetic logic device and spinning microwave oscillator with the similar structure based on Rashba effect. The invention realizes the separation of reading and writing, can effectively protect the device from damaging during high current density reading or writing and can effectively reduce the current density and increase the maneuverability of the device; and the invention also adopts the design scheme of closed geometry, thus further reducing the interference of magnetic field to the device.

A detector detects microwaves reflected from a processing chamber. Based on the reflected microwaves, a load impedance is calculated. An amount of adjustment required to match the load impedance with an impedance of a microwave oscillator is calculated. The calculated amount of adjustment multiplied by a predetermined value smaller than 1 is transmitted as an adjustment signal. A load matching device is repeatedly controlled based on the adjustment signal. Consequently, the load impedance gradually approaches the impedance of the oscillator. Eventually, an impedance match is attained.

A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.

The invention discloses a spinning microwave oscillator based on a vertical magnetizing free layer and a manufacturing method of the spinning microwave oscillator. The spinning microwave oscillator comprises a magnetic multilayer film and electrodes connected with the magnetic multilayer film, wherein the magnetic multilayer film comprises a seed layer, a first magnetic layer, a non-magnetic isolating layer, a magnetic free layer and a protecting layer; the first magnetic layer is formed on the seed layer and has an in-plane balanced magnetizing state; the non-magnetic isolating layer is formed on the first magnetic layer; the magnetic free layer with vertical magnetization is formed on the non-magnetic isolating layer; and the protecting layer is formed on the free layer. The manufacturing method of the spinning microwave oscillator comprises the steps of: forming the magnetic multilayer film on a substrate according to a magnetron sputtering method; processing the magnetic multilayer film into a nanometer columnar or point contact structure according to microelectronic technology; and arranging upper and lower electrodes on the magnetic multilayer film so as to form a target product. The spinning microwave oscillator can obtain high microwave power output without externally added magnetic field; the spinning microwave oscillator has the characteristics of small size, simple structure, adjustable broadband, easiness in integration and the like; the preparation is easily realized; and the cost is low.

The invention provides a spin microwave oscillator and a spin microwave detector. The spin microwave oscillator of the invention is directly controlled by direct current based on microwave oscillationand output of a spin angle momentum transfer principle, or jointly regulated and controlled by direct current and impressed static magnetic field, has the advantages of miniaturization, high integration, low power consumption, high controllability and tunability and the like. The spin microwave detector of the invention directly detects input microwave by direct voltage generated by the input microwave, and has the advantage of direct measurement on high-frequency signals in no need of hybrid frequency.

A plasma-processing apparatus includes a vacuum chamber for accommodating an object to be processed and for providing plasma processing to the object under a vacuum or reduced environment, an impedance matching unit configured for impedance matching, the impedance matching unit being provided between the vacuum chamber and a microwave oscillator for generating microwaves, and a controller for controlling actions of the impedance matching unit based on a relationship among a matching state of the impedance matching unit, a microwave strength distribution necessary to generate plasma for the matching state, and a matching state of the impedance matching unit which minimizes a reflected wave during the plasma processing.

The invention discloses an automatic testing method for parameters of a microwave oscillator. The automatic testing method comprises the following steps of powering up the to-be-tested microwave oscillator; transmitting a signal to a first coupler by the microwave oscillator, transmitting a main signal of the first coupler to a second coupler by the first coupler, transmitting a main signal of the second coupler to a power meter by the second coupler, transmitting a branch signal of the first coupler to one of a frequency spectrograph and a frequency meter by the first coupler, and transmitting a branch signal of the second coupler to the other one of the frequency spectrograph and the frequency meter by the second coupler; controlling the power meter, the frequency spectrograph and the frequency meter by a control device to test the microwave oscillator, acquiring testing results and storing, and controlling a display device to display. According to the method, automatic testing of the working frequency, the output power and the phase noise of the microwave oscillator can be realized, and data does not need to be manually read and manually recorded, and therefore, the accuracy and the consistency of the testing results are improved, and the testing efficiency is improved. The invention also discloses an automatic testing device for the parameters of the microwave oscillator.

The invention discloses a broadband microwave signal low-phase noise synthesizing device and method. The device comprises a reference source, a fractional frequency division oscillating circuit, a broadband sampling local oscillating circuit, a sampling frequency mixer, a middle-frequency filter, a phase discriminator, a circuit integrator, a broadband microwave oscillator, a broadband microwave amplifier, an amplifier, a frequency multiplier, a narrowband filter, a high-purity-point frequency synthesizing circuit, a band-pass filter, a broadband filter, a broadband microwave frequency mixer and a low-pass filter. According to the broadband microwave signal low-phase noise synthesizing device and method, the broadband microwave signal low-noise synthesis technology according to which fixed frequency mixing, sampling and frequency mixing are combined, a traditional broadband sampling procedure is improved, namely before sampling on a feedback signal is carried out by a YIG oscillator, the feedback signal is mixed with a highly-pure local oscillation signal with the fixed frequency at first and the frequency of a local oscillation signal is converted from a high frequency into a low frequency. Then the local oscillation signal enters a sampler and undergoes sampling and frequency mixing with a sampling local oscillation signal. Thus, the sampling harmonic number can be reduced, and therefore deterioration of phase noise is relieved.

A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality if microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Techniques and devices based on optical resonators made of nonlinear optical materials and nonlinear wave mixing to generate RF or microwave oscillations using an active opto- electronic loop.

A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an annular antenna 73 arranged on the sealing plate 55 and consisting of an annular waveguide to introduce a microwave into the processing container 53 through the sealing plate 55, the annular antenna 73 being arranged so that a plane containing an annular waveguide path defined by the annular waveguide is generally parallel with the sealing plate 55, a directional coupler 79 arranged on the periphery of the annular antenna 73, a propagation waveguide 81 connected to the directional coupler 79 and a microwave oscillator 83 connected to the propagation waveguide 81. Accordingly, it is possible to form an uniform microwave in the antenna, so that an uniform plasma can be produced in the processing container.

The invention provides a low-phase noise microwave local oscillation generating device. After a broadband microwave oscillator feedback signal passes by a broadband microwave signal conditioning circuit, down mixing is carried out on the broadband microwave oscillator feedback signal and a local oscillation signal of a certain frequency of a high-purity down-conversion local oscillation group to convert the broadband microwave oscillator feedback signal from a microwave frequency band with higher frequency into a radio frequency band with lower frequency, and then the broadband microwave oscillator feedback signal is mixed with low-noise radio frequency local oscillation, phase discrimination is carried out on a mixed output middle frequency signal and a reference signal from a fractional frequency-division phase-locked loop, and a phase discrimination output is added to a control end of a broadband microwave oscillator after passing by a loop integrator, so that necessary low-phase noise microwave local oscillation is output. The low-phase noise microwave local oscillation generating device provided by the invention overcomes the technical bottleneck that in a sampling mixing method adopted in traditional frequency synthesis, near carrier phase nose for synthesizing the local oscillation signal is constrained by sampling local oscillation phase noise, and a phase noise index of the microwave synthesis local oscillation signal is further improved.

A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is performed on a processing target object. The microwave generation unit includes an oscillation circuit configured to oscillate the microwave, a pulse generation circuit configured to oscillate a control wave having a predetermined frequency bandwidth at a predetermined cycle, and a frequency modulation circuit configured to modulate a frequency of the microwave to a modulated wave having the predetermined frequency bandwidth by the control wave and output the modulated wave, and the frequency modulation circuit alternately and repeatedly outputs the modulated wave and a non-modulated microwave at the predetermined cycle.

A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.

Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n+-GaAs substrates. The real-space transfer transistors (RST), the collector is located under the substrate, reveal very strong negative differential resistance phenomena. The RST structure using an InGaAs channel manifests superior characteristics of a very high peak-to-valley current ratio up to 430,000 at room temperature, a peak current as high as 100 mA, very sharp charge injection, and a valley current as broad as 5.5V. Meanwhile, high performance heterostructure field effect transistors can be implemented on the same wafer by further evaporating a gate between source and drain electrodes. In order to significantly reduce leakage current, an ohmic recession is made at the source and drain. These new multiple-functions device may be used in high-speed, low-noise, and / or high power microwave oscillators and amplifiers.

The invention discloses a composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and a preparation method thereof. The device is of a composite channel structure; mesa isolation of combined ion injection and wet corrosion is adopted; a source-drain metallic system of Ni / AuGe / Ni / Au forms ohmic contact; a T-shaped gate is manufactured by using a three-layer resist technology of two self-alignment processes of an electronic exposure beam and one development process; two different kinds of corrosion solution are used for corroding to form a gate groove; a vaporized Pt / Ti / Pt / Au metallic system forms schottky contact in the gate groove; buried Pt is formed through annealing treatment; a silicon nitride passivation layer is formed; thus the preparation of the device is finished. The oscillator and the method have the advantages of simple process, high reliability of the device and convenience in repetition. Superior direct current performance and alternating current performance are obtained by using the prepared device with gate length of 80 nanometers, the maximum output saturation current reaches 920 mA / mm, and the extrinsic transconductance reaches 1,100 mS / mm. The characteristic frequency of the device reaches 246GHz, and the maximum oscillation frequency is 301GHz.

System and method for increasing the frequency tuning range of a RF / microwave LC oscillator. A preferred embodiment comprises a voltage controlled oscillator (VCO) configured to generate an output signal at a frequency that is dependent upon a magnitude of an input voltage level and an effective inductance of an inductive load and a variable inductor coupled to the VCO. The variable inductor comprises a primary inductor coupled to the VCO to produce a magnetic field based upon a current flowing through the primary inductor and a secondary inductor magnetically coupled to the primary inductor, the secondary inductor to affect the magnitude of the effective inductance of the primary inductor.

Disclosed is a spin-polarized current-driven microwave oscillator structure and a preparation method thereof, belonging to the field of spin transportation device technology, which is characterized in that an oxidized silicon substrate is adopted to prepare a multi-layer structure through the ultra-high vacuum magnetron sputtering, and then the multi-layer structure is processed into a columnar structure which has a horizontal size of 100+-50 nm through electron beam lithography, Ar ion beam etching, positive photoresist stripping and other microelectronics technologies. An upper electrode and a lower electrode are produced on the top layer of the multi-layer membrane structure and on the surface of the bottom-layer membrane, and the current injection direction is perpendicular to the plane of the metal multi-layer membrane. The invention has advantages that the initial magnetization directions of the fixed layer and the free layer are both located within the membrane plane and are perpendicular to each other, so that the free layer obtains the largest horizontal spin injection, so as to achieve substantial spin precession, to facilitate the obtaining of large microwave power output without any requirements of adding external magnetic field.

The present invention relates to a vacuum evaporation method and device of a luminescent layer of an organic light emitting diode display. The method comprises the steps of outputting the luminescent material particles via a luminescent material evaporation source; enabling the luminescent material particles to rub mutually to be electrified via a microwave oscillation generator; forming a guiding electric field between the sub-pixels of different colors, so that the electrified luminescent material particles are deposited in an area of the appointed sub-pixels on a display panel under the action of the guiding electric field, and accordingly, the luminescent layer of the appointed color is evaporated in the area. According to the present invention, the vacuum evaporation of the luminescent layer does not need a mask and a mask alignment mechanism, the vacuum evaporation position is accurate, the color mixture is not generated easily, the mask also does not need to be replaced, and the production efficiency of a vacuum evaporation technology is improved.

A current-driven symmetric magnetic multilayer-structure microwave oscillator belongs to the field of microwave technology. The invention is characterized in that the current-driven symmetric magnetic multilayer-structure microwave oscillator is composed of two ferromagnetic films with the same thickness which is between 2 nanometers and 6 nanometers. The two ferromagnetic films are separated by a thin non-magnetic layer which has a thickness between 1 nanometer and 3 nanometers (non-magnetic metal layer) or between 0.5 nanometer and 1.5 nanometers (insulating layer). The upper part and lower part of nanometer magnetic multilayer column are equally provided with a metal layer as an electrode. When a constant and invariable direct current vertically passes the magnetic multi-layer structure, the spin polarization and spin moment transmission are generated. Furthermore the spin moment is exerted to each magnetic layer. When the current exceeds a threshold value, the alternate direction turnover of magnetization vectors of two magnetic films is caused, and furthermore the periodic changing of magnetic multilayer resistor is caused thereby generating stable microwave oscillation. The oscillation frequency and current have a linear relationship between 1-100GHz. The microwave power can also be adjusted by current between 1 microwatt and 1 milliwatt. The full-metallic structure accounts for 4%, and the magnetic channel structure accounts for 30%.