255 results about "Copper thin film" patented technology

In order to provide a new production method of a suspension board with circuit capable of preventing deterioration of the outward appearance and defects in products caused by a metal supporting layer, and further capable of forming an electroless nickel plating layer having an even thickness in a reliable manner, an insulating base layer is first formed on a supporting board, and a chromium thin film and a copper thin film are formed next sequentially on the surface of the supporting board exposed from the insulating base layer and on the entire surface of the insulating base layer. Subsequently, a plating resist is formed in a reversal pattern with respect to the wired circuit pattern on the surface of the copper thin film, and a conductor layer is formed on the surface of the copper thin film exposed from the plating resist by electrolytic plating. The plating resist is removed after an electroless nickel plating layer is formed on the conductor layer. Subsequently, the copper thin film and the chromium thin film are removed sequentially, and an insulating cover layer is formed next.

Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

The invention discloses a method for preparing an ultra-flat copper monocrystalline film. The method for preparing the copper monocrystalline film, provided by the invention, comprises the following steps: taking a sapphire monocrystal as a growth substrate, carrying out copper target magnetron sputtering, and carrying out annealing, thereby obtaining the copper monocrystalline film. According to the method, sapphire is adopted as an epitaxial substrate of copper, a magnetron sputtering method is adopted, a copper film with consistent orientation is deposited on the surface of a c-face sapphire substrate, and copper with consistent orientation is aged and grows up during subsequent annealing so as to form a consistent-orientated monocrystalline copper (111) film without in-plane twin crystals. The monocrystalline copper (111) film prepared by the method is extremely flat in surface, controllable in diameter and high in repeatability and has a very extensive application prospect in the fields of communications, electronics, graphene preparation and the like.

The present invention relates to a flexible printed circuit board which has extremely high adhesion performance and on which very fine circuit patterns can be formed by etching, and to a method for producing the same. In the present invention, in the flexible printed circuit board wherein a copper thin film made of copper or an alloy containing primarily copper is directly formed on at least one side of a plastic film substrate, and copper is formed further on the copper thin film by the electrolytic plating method, the above-mentioned copper thin film has a two-layer structure in which a layer including at least a crystalline structure is formed on the surface side thereof, and the X-ray relative intensity ratio between crystal lattice plane indices (200) / (111) in the above-mentioned crystalline structure is 0.1 or less.

The invention discloses a perform-optimized cadmium telluride thin-film battery and a manufacturing method for the cadmium telluride thin-film battery, wherein the cadmium telluride thin-film battery comprises a substrate and an epitaxy lamination layer; the epitaxy layer lamination sequentially consists of a conducting layer, a window layer, a light-absorbing layer, a back barrier layer and a back electrode from the bottom up; the window layer is of a textured cadmium sulfide thin-film layer; the light-absorbing layer is of a cadmium telluride thin-film layer, the back barrier layer is of a zinc telluride / copper-doped zinc telluride composite layer or a mercury telluride / copper-doped mercury telluride composite thin-film layer, and the back electrode is of one or more of graphite slurry or graphene slurry thin-film layer or copper thin-film layer, nickel thin-film layer, copper-nickel alloy thin-film layer and molybdenum thin-film layer. According to the cadmium telluride thin-film battery provided by the invention, the window area is textured and an optical path of a light-transmitting area is reduced, and thus a light-absorbing capacity is further improved and the better light-trapping effect is realized.

Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

A preparation method of a three-dimensional micrometer level porous copper thin film comprises: a metal substrate is offered and serves as a negative electrode and a red copper sheet is offered and serves as a positive electrode; electroplating liquid is prepared, the content of Cu2+ in the electroplating liquid is 0.08mol / L to 0.2mol / L, the content of H2SO4 is 1.50mol / L to 3.00mol / L, the total content of a surface active agent is 0.5 mmol / L to 4.0mmol / L and the content of Cl- is 1.5mmol / L to 3.0mmol / L; and the three-dimensional porous copper thin film is formed on the metal substrate by using the electroplating liquid, the negative electrode and the positive electrode and adoption of a hydrogen bubble dynamic formwork electrodeposition method. The three-dimensional micrometer level porous copper thin film manufactured through the preparation method is even and small in hole diameter and high in porosity.

A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and / or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

The invention relates to the technical field of solar batteries, in particular to a cuprous oxide thin film solar battery with a surface self-texture structure; a layer of n-type cuprous oxide thin film is deposited on electrically conductive glass; a layer of p-type cuprous oxide thin film with the shape of a pyramid is deposited on the n-type cuprous oxide thin film; and electrodes are arrangedon the electrically conductive glass and the p-type cuprous oxide thin film. A manufacturing method comprises the following step: when the pH value of the electrolyte is 4-5 and the voltage is from minus 0.01V to 0.1V, the n-type cuprous oxide thin film is deposited on the electrically conductive glass; when the pH value of the electrolyte is 11-12 and the voltage is from minus 0.1 V to minus 0.3V, the p-type cuprous oxide thin film is deposited on the n-type cuprous oxide thin film; and the electrodes are manufactured on the electrically conductive glass and the p-type cuprous oxide thin film. The solar battery of the invention can supply stable constant current output and has higher photoelectricity conversion efficiency; and by adopting the manufacturing method, the rapid low-cost pollution-free mass production of the cuprous oxide solar battery is realized.

The invention relates to an organic solar battery and a preparation method thereof, taking CuS as a hole transport layer. The organic solar battery comprises a transparent conductive substrate, a CuS hole transport layer, an organic active layer, an electron transport layer and metal electrodes. The CuS hole transport layer is a thin film formed in a way that a copper thin film is obtained through magnetron sputtering, and then the copper thin film and powdered sulfur are subjected to in-situ hydrothermal growth. The CuS prepared by the magnetron sputtering and a hydrothermal reaction method is used as the hole transport layer of the organic solar battery, and compared with the energy conversion efficiency of an organic inorganic hybridized solar battery without the CuS hole transport layer, the energy conversion efficiency of the organic solar battery with the CuS hole transport layer is generally improved. Compared with a PEDOT:PSS (poly-ethylenedioxythiophene : p-styrene sulfonate) hole transport layer, the CuS avoids the erosion effect on the conductive substrate, and the stability is enhanced. The organic battery photovoltaic feature, taking the CuS as the hole transport layer, can be on a par with the battery property, taking MoO3 as the hole transport layer, and further, the organic solar battery is lower in cost and is more practical.

The present invention provides a method for producing a printed-wiring board in a semi-additive process, comprising the steps of: providing a chemical copper plating 4 on an insulation layer 3 or forming a copper thin film on the insulation layer 3 using a sputtering method; subjecting the obtained copper surface 4 to a roughening treatment using an etching solution containing 0.1 to 3% by mass of hydrogen peroxide, 0.3 to 5% by mass of sulfuric acid, 0.1 to 3 ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles; attaching a dry film resist 5 to the copper surface 4 after the roughening treatment to perform exposure and development and providing an electrolytic copper plating 7 to an opening 6 after the exposure; and subjecting the remaining dry film resist to a stripping treatment using a resist stripping liquid containing 0.5 to 20% by mass of monoethanolamine, 0.2 to 10% by mass of quaternary ammonium hydroxide, 0.01 to 10% by mass of ethylene glycols and 0.01 to 0.5% by mass of azoles.