Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nano porous copper thin film material by magnetron sputtering

A nanoporous copper and magnetron sputtering technology, applied in sputtering plating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of complex steps, poor conductivity, limited use, etc., and achieve simple preparation methods , controllable size and continuous structure

Active Publication Date: 2016-05-04
SHANDONG UNIV
View PDF7 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The prior art discloses some methods (such as: CN103343253A, CN102703748) using mechanical ball milling and vacuum stripping to prepare binary alloy precursor base materials, and then utilizes the method of dealloying to corrode and remove more active components, thereby obtaining nanoporous copper materials , but the obtained material has to go through multiple ball milling and smelting processes and vacuum stripping, the steps are more complicated, and the prepared nanoporous copper material is not continuous, mainly nanoporous copper powder, which does not have continuity, and the scale Smaller, costly and unsuitable for mass production, thus limiting its further use
Ding Liuwei's "Research on the Preparation of Nanoporous Copper by Dealloying Method" discloses a copper film material with a continuous nanoporous structure prepared from a copper-zinc alloy, but the copper film uses glass or single crystal silicon as a substrate, which is electrically conductive. Poor performance, unable to meet the technical requirements of commercial electrodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nano porous copper thin film material by magnetron sputtering
  • Method for preparing nano porous copper thin film material by magnetron sputtering
  • Method for preparing nano porous copper thin film material by magnetron sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Implementation Example 1: The base copper foil used in the experiment is a commercially produced copper foil with a copper content of more than 96%.

[0051] Cut the purchased commercial copper foil into a size of 5×5cm, flatten it and remove the edge burrs. Use crystal phase flannelette and crystal phase polishing agent to polish the surface of copper foil to make it rough. The velvet cloth of the crystal phase polishing agent, press the copper foil and move it back and forth, left and right, so that there is moving friction between the copper platinum and the flannelette, and polish for about 5 minutes, during which time the crystal phase polishing agent needs to be sprayed 1 or 2 times. Clean the polished copper foil with alcohol ultrasonically for 5 minutes to remove the crystal phase polishing agent remaining on the surface, and repeat the cleaning 2 to 3 times until the polishing agent is completely cleaned. The copper foil obtained in the previous step was ultra...

Embodiment 2

[0052] Implementation example 2: The equipment used in the laboratory is the TRP-450 high-vacuum three-target magnetron coating system produced by Shenyang Scientific Instruments, Chinese Academy of Sciences. The coating quality is good and the operation is simple.

[0053] Transfer the cleaned copper foil to the sample base of the equipment, turn on the mechanical pump to pre-evacuate to 20Pa, turn on the molecular pump to start high vacuum, and after 3 hours, the molecular pump can pump the air pressure of the reaction chamber to 8×10 -5 , to achieve the vacuum conditions required for the experiment. Continuing from the previous step, open the argon gas flow valve to control the flow rate at 20 sccm, and then pass the gas for 5 minutes to control the chamber pressure to 1.0Pa through the plate valve. After you are ready, turn on the substrate selection switch and control the substrate speed at 24r / min. Turn on the sputtering power supply, adjust the copper target sputtering ...

Embodiment 3

[0054] Implementation Example 3: The annealing equipment used in the experiment is the TRP-450 high-vacuum three-target magnetron coating system of Shenyang Scientific Instruments of the Chinese Academy of Sciences with a built-in substrate heating function. The dealloying step is carried out in a water bath by controlling the temperature.

[0055] After the co-sputtering of the copper target and the aluminum target is completed, turn on the substrate heating power, adjust to the preset temperature of 450°C, and at the same time control the argon gas flow rate to 10 sccm, turn on the heating start button to start heating, and when it reaches the preset temperature of 450°C, time it for 2 hours . After heating and annealing, turn off the heating power supply, wait until the sample cools to room temperature, turn off the sputtering equipment, and take out the obtained sample. Cut the sample obtained in the previous step into a size of 1×0.5cm, prepare a 1mol / L hydrochloric acid ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a nano porous copper thin film material by magnetron sputtering. The method takes a commercial copper foil as a base body material and takes high-purity copper target and aluminum target as sputtering materials; magnetron sputtering equipment is a preparation tool; a nano porous copper thin film is obtained by sputtering a copper-aluminum thin film through a glow discharge principle, and dealloying and corroding to remove an active component aluminum after annealing and alloying. The method provided by the invention is a two-step reaction method, the problems in the prior art that steps for carrying out smelting, ball milling and melt spinning on alloy auxiliary materials are complicated and consumed time is long are solved, and steps of a preparation process are simplified; a nano porous structure of nano porous copper is obtained and the size of the thin film is controllable; the obtained structure is better than a nano porous copper powder sample obtained by a traditional method; furthermore, an application range of the nano porous copper is enlarged and the nano porous copper has a commercial prospect.

Description

technical field [0001] The invention relates to a method for preparing a nanometer thin film material, in particular to a method for preparing a nanoporous copper thin film material by magnetron sputtering. Background technique [0002] Nanomaterials refer to materials that have at least one dimension in the three-dimensional space at the nanoscale or are composed of them as basic units. Specifically, it can be divided into zero-dimensional (scale particles, atomic clusters, etc.), one-dimensional (nanowires, nanorods, and nanotubes, etc.) and two-dimensional (ultra-thin films, multilayer films, superlattices, etc.). Nanomaterials have attracted extensive attention because of their special properties such as small size effect, surface effect, quantum size effect and macroscopic tunnel effect. The methods for preparing nanomaterials are also relatively mature at present, mainly including evaporation condensation method, precipitation method, spray method, hydrothermal method...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/16C22C3/00C22C1/08C23F1/20
CPCC22C1/08C22C3/005C23C14/165C23C14/352C23C14/5806C23F1/20
Inventor 司鹏超孙挥
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com