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Preparation method of three-dimensional micrometer level porous copper thin film

A three-dimensional porous and porous copper technology, which is applied in the direction of electroforming and electrolysis, can solve the problems of unobvious three-dimensional structure of the coating, narrow aperture adjustable area, small aperture adjustment range, etc., to achieve short preparation time, coating is not easy to fall off, Effects with a wide range of adjustments

Inactive Publication Date: 2013-06-05
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process has the following disadvantages: (1) The three-dimensional structure of the coating is not obvious (2) The aperture adjustable area is narrow, the maximum can only reach 100 μm, and the minimum can reach 25 μm
(4) The uniformity of the pore size in the same batch is poor, such as at a current density of 3A / cm 2 , the pore diameter of the preparation at a temperature of 20°C is 40±25μm
However, there are also poor adhesion of the coating and a small pore size adjustment range. The maximum pore size of the prepared porous copper is 150 μm, and the minimum is 10 μm.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Use 400#, 600#, 800#, 1000# sandpaper in turn to size 2×2cm 2 After polishing the cathode red copper sheet, rinse the surface with deionized water, at 0.75mol / LNa 2 CO 3 After soaking in the solution (20°C) for 7 minutes, rinse with deionized water, then soak in 0.75mol / L HCl solution (20°C) for 7min, rinse with deionized water, and blow dry with a protective gas such as nitrogen or argon. The cathode red copper sheet after the above pretreatment is placed in the plating solution, and a porous copper film is deposited thereon by a hydrogen bubble dynamic template electrodeposition method known in the art. The composition of the plating solution is: CuSO 4 ·5H 2 O content 0.08mol / L, H 2 SO 4 Content 3.00mol / L, total content of sodium dodecyl sulfate and sodium dodecyl sulfate (molar ratio 1:4) 3.5mmol / L, CuCl 2 Content 1.5mmol / L. The distance between the cathode copper sheet and the anode copper sheet (the anode always uses the copper sheet in the present inventio...

Embodiment 2

[0021] The cathode substrate is a titanium sheet, the concentration of the alkali solution is 0.5mol / L (25°C), the concentration of the acid solution is 0.5mol / L (25°C), and the soaking time is 10min. The composition of the plating solution is: CuSO 4 ·5H 2 O content is 0.15mol / L, H 2 SO 4 Content 2.5mol / L, total content of sodium lauryl sulfate and butynediol (molar ratio 1:1) 1.5mmol / L, CuCl 2 Content 1.20mmol / L. The current density is 2.5A / cm 2 , The electrodeposition time is 60s, and the bath temperature is 25°C. All the other conditions and steps are consistent with Example 1.

[0022] The thickness of the porous copper film is 200±8μm, the pore diameter is 15±5μm, and the porosity is 87.5%.

Embodiment 3

[0024] The cathode substrate is a copper-zinc alloy sheet, the concentration of the alkaline solution is 1mol / L (35°C), the concentration of the pickling solution is 1mol / L (35°C), and the soaking time is 6 minutes. The composition of the plating solution is: CuSO 4 ·5H 2 O content is 0.10mol / L, H 2 SO 4 Content 1.5mol / L, total content of sodium lauryl sulfate and sodium dodecyl sulfate (1:1) 2.5mmol / L, CuCl 2 The content is 1.0mmol / L. The current density is 1.5A / cm 2 , The electrodeposition time is 100s, and the bath temperature is 30°C. All the other conditions and steps are consistent with Example 1.

[0025] The thickness of the porous copper film is 250±10μm, the pore diameter is 100±8μm, and the porosity is 86.4%.

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PUM

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Abstract

A preparation method of a three-dimensional micrometer level porous copper thin film comprises: a metal substrate is offered and serves as a negative electrode and a red copper sheet is offered and serves as a positive electrode; electroplating liquid is prepared, the content of Cu2+ in the electroplating liquid is 0.08mol / L to 0.2mol / L, the content of H2SO4 is 1.50mol / L to 3.00mol / L, the total content of a surface active agent is 0.5 mmol / L to 4.0mmol / L and the content of Cl- is 1.5mmol / L to 3.0mmol / L; and the three-dimensional porous copper thin film is formed on the metal substrate by using the electroplating liquid, the negative electrode and the positive electrode and adoption of a hydrogen bubble dynamic formwork electrodeposition method. The three-dimensional micrometer level porous copper thin film manufactured through the preparation method is even and small in hole diameter and high in porosity.

Description

technical field [0001] The present invention generally relates to a method for preparing porous materials, in particular to a method for preparing a three-dimensional porous copper film with controllable morphology. Background technique [0002] Porous metal material is an important part of porous materials. It is composed of metal skeleton and pores. It is a functional material with good comprehensive mechanical properties such as good electrical conductivity, stable shape, high temperature resistance, and strong impact resistance. Porous metal can be used not only as a functional material in many occasions, but also as a structural material in some occasions. It is a multi-purpose engineering material with excellent performance. Porous copper is widely used in aerospace, fuel cells, catalyst supports, material separation and optoelectronic devices due to its excellent electrical and thermal properties. [0003] At present, the methods for preparing porous copper mainly in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D1/08
Inventor 黎学明罗彬彬赖川张代雄杨文静
Owner CHONGQING UNIV
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