The invention discloses an oxidation treatment process of a
crystalline silicon solar cell, comprising the following steps: (1) heating dry
oxygen pre-oxidation: a
silicon wafer is pushed into an oxidation tube, the temperature is increased to 850-900 DEG C, dry
oxygen is introduced, oxidation is carried out, and a
silicon dioxide layer is formed on the surface of the
silicon wafer, wherein the reaction time is 100-600 seconds; (2) high temperature
chlorine-doped oxidation: dry
oxygen is continuously introduced, the temperature is increased to 900-950 DEG C,
trichloroethane is introduced, and the condition is maintained for 1500-2500 seconds; (3) constant temperature propulsive oxidation: the temperature in step (2) is maintained, the introduction of
trichloroethane is stopped, dry oxygen is continuously introduced, and the condition is maintained for 300-800 seconds; and (4) temperature reduction: the introduction of dry oxygen is stopped, and the silicon
wafer is taken out from the oxidation tube. In the oxidation treatment process provided by the invention, the
processing time of the whole process is greatly reduced, and the problems that resource waste is caused by long-time oxidation and the capacity is reduced are avoided, thus having positive realistic significance.