75results about How to "Reduce thermal process" patented technology

An internal laser module may be capable of providing a similar high performance as that provided by traditional internally cooled laser modules, but with improved cost efficiency and manufacturability. In the internally cooled laser module, a laser subassembly, such as a coaxial semiconductor laser, may be mounted on a thermoelectric cooler cooler-base with several other components enclosed in a properly designed case.

The invention relates to a seven planet screw combination device and method for plastifing, exhausting and extruding, comprising a screw mechanism, a cylinder, a material inlet, an air exhaust, a material outlet and a power mechanism. The screw mechanism comprises a center screw and six planet screws; the axis of the center screw is coincident with the axis of the cylinder; the axes of the six planet screws are all parallel to the axis of the center screw and surrounds the center screw; the center screw is meshed with each planet screw; each planet screw is meshed with two adjacent planet screws; the lines connecting the center of each planet screw form a regular hexagon; the center distance of any two adjacent planet screws is equal to the length of a side of the regular hexagon; the center screw is arranged in the center of the regular hexagon; and the power mechanism is respectively connected with the screw mechanism and the cylinder. The invention also provides a method for plastifing, exhausting and extruding. The invention has the advantages of adjustable retention time, low power consumption, thorough air exhaust and self-cleaning function, etc.

A rotating electric machine in which, in welding a stator core and a case together, thermal damage to an insulation film due to the welding is suppressed. The rotating electric machine has the case (10) and the stator core (20). The stator core (20) has teeth (21) and a back yoke (22). Recesses (221) open to the side opposite a rotating shaft (P) are arranged in the outer peripheral surface (220)of the back yoke (22) such that each of the recesses (221) corresponds to each of the teeth (21). The case (10) and the stator core (20) are welded and fixed together at a position between each of tworecesses (221) adjacent to each other in the direction of a circumference about the rotating axis (P). The minimum distance between the root and recess (221) of each of the teeth (21) is smaller thanthe width in the radial direction of the back yoke.

An ambulatory device for use in therapeutic and / or cosmetic treatment has a localised light source such as an LED (e.g. 6; 19; 46; 119; 219). Light from the source is output through an output surface which, in use, covers the area to be treated, and light is distributed over that surface by means of a diffusing member (e.g. 14; 114; 214) of which the output surface may form an integral part.

The invention discloses a cement clinker and belongs to the technical field of cement clinker production. The clinker is prepared from the following raw materials in percentage by mass: 30 to 60 percent of calcareous materials, 0 to 25 percent of siliceous materials, 10 to 40 percent of aluminum materials, 0 to 10 percent of ferrous materials and 5 to 20 percent of gypsum materials; a mineral composition of the clinker is prepared from 10 to 40 percent of C4AS, 25 to 40 percent of C2S and 10 to 30 percent of C4AF. According to the clinker disclosed by the invention, the iron content of the cement clinker is low, and the seawater erosion resisting ability of the clinker is improved; the cement clinker is especially suitable for marine engineering.

The invention discloses a manufacturing method of a trench-gate superjunction device. The manufacturing method comprises the steps of 1, forming a trench gate, wherein the step 1 comprises the steps of 11, forming a gate groove in a first epitaxial layer in which a superjunction structure is not formed; 12, forming a gate oxide layer, and rounding a bottom angle and a top angle of the gate grooveby a thermal oxidization process of the gate oxide layer; and 13, forming a poly-silicon gate; and 2, forming the superjunction structure, wherein the step 2 comprises the steps of 21, forming a superjunction post groove; and 22, filling a second epitaxial layer in the superjunction post groove to form a second conductive type of post of the superjunction structure, wherein the first conductive type of post of the superjunction structure comprises the first epitaxial layer between the superjunction grooves. By the manufacturing method, the electric leakage of the device can be reduced, the reliability of the device is improved, and meanwhile, the specific conduction resistance of the device also can be reduced.

A method and apparatus reduces hot spotting in transmission clutch packs actuated by a piston with axial fingers engaging the clutch pack. The method and apparatus combine an alternative pack arrangement with the fingered actuator, the alternative pack preferably being an inverted double sided pack or a single sided pack. The friction plates may have single or double side friction layers, but a second set of plates are splined for rotation with the shaft when the friction plates and the piston are splined for rotation with the housing in which the shaft rotates.

The invention relates to a method for cleaning adhesive slag of circuit board cutting tool, which artificially removes the chip on used drill needle, and uses cleaning agent to clean the drill needle again, then uses ball objects to clean the drill needle via spraying sand, uses ball objects and cleaning agent to clean the needle via ultrasonic wave, dries the needle and colors, at last grinds the face of the drill needle. Therefore, the invention can effectively remove the adhesive slag on the drill needle, improve service life of drill needle, smoothness and cutting force, to improve the quality of drill hole.

The invention discloses a cement reinforcer which comprises the following components in parts by weight: 8-18 parts of zeolite powder, 15-22 parts of precipitated barium sulfate, 8-12 parts of talcum powder, 30-38 parts of diatomite powder, 13-21 parts of borax, 9-14 parts of acrylamide, 9-21 parts of calcium lignosulphonate, 4-7 parts of sodium acetate, 9-18 parts of ethylene glycol, 2-4 parts of urea, and 48-62 parts of water. The relative density of the cement reinforcer disclosed by the invention is 1.12-1.21, which is much smaller than the density of cement paste, so that an anti-fluid-channeling effect can be achieved on the premise of not changing the density of cement paste; according to the invention, composite cement concrete has the functions of heat insulation, heat preservation, insulation, resistance, and the like, so that artificial maintenance can be omitted; because after the reinforcer is added, the reinforcer is expanded and produces a dynamic reverse reaction to the solidification of cement, duo to the expansion operation, the strength of cement and the cementing strength of cement with other media are significantly improved, and cement also can be saved by 28-36%; and according to the invention, the heat produced in the process of solidification caused by a chemical reaction between cement and water is reduced by about 50%, thereby achieving an anti-crack effect.

The invention belongs to the technical field of crystalline silicon solar cells, and relates to a front grid line passivation contact-basedPERC solar cell and a preparation method thereof. The solar cell comprises a P type monocrystalline silicon substrate; a back aluminum oxide passivation layer and a back silicon nitride passivation layer are sequentially arranged on the back surface of the P type monocrystalline silicon substrate from inside to outside. A front silicon oxide passivation layer and a front silicon nitride passivation layer are sequentially arranged on the front face of the Ptype monocrystalline silicon substrate from inside to outside; a front metal silver grid line penetrating through the front silicon oxide passivation layer and the front silicon nitride passivation layer is arranged on the front face of the P type monocrystalline silicon substrate. An ultrathin tunneling silicon oxide layer and a phosphorus-doped polycrystalline silicon layer are sequentially arranged on the front face of the P type monocrystalline silicon substrate and located below the front face metal silver grid line from inside to outside. According to the solar cell and preparation method thereof of the invention, the open-circuit voltage of the cell can be improved, the carrier recombination of a metal contact region can be reduced, the parasitic absorption of the doped polycrystalline silicon layer to light can be reduced, the current loss can be reduced, and the efficiency of the PERC cell can be improved.

A tug boat having at least one towing winch and a movable towing point apparatus, wherein said towing point apparatus can guide a towing cable from a towing winch to a vessel to be assisted, comprising a rotating element that at least partly guides the towing cable such that the pulling force on said cable is transmitted to the tug boat at least partly through said rotating element when in use, said rotating element pivoting freely around a first axis and said first axis fixed to an arm which in turn can pivot about a second axis, said second axis being spaced apart from said first axis and the second axis being non-parallel.

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

A power MOS field effect transistor with polysilicon field plate and a manufacture method thereof are characterized in that a terminal protection structure of the periphery of an active region of the MOS field effect transistor is improved in the following aspects: 1. a P<-> trap of the periphery of edged unit cells of a unit cell array is directly treated as a field limiting ring; 2. a field limiting ring P<-> area, a cut-off ring P<-> area and a P<-> trap of the unit cell array are treated as the same manufacturing layer which is formed by P-shaped doping simultaneously; 3. field oxygen is omitted, the structure of the field plate is changed in composition and composed by a grid silica layer and polysilicon; 4. the polysilicon in the field plate is treated as a barrier layer injected with P-shaped impurity ions, and the field limiting ring P<-> area, the cut-off ring <-> area and the P<-> trap of the unit cell are formed directly; 5. N-shaped doping is carried out after P-shaped doping, thus causing upper parts of the field limiting ring P<-> area, the cut-off ring P<-> area and the P<-> trap of the unit cell array have an N<+> area. The power MOS field effect transistor with polysilicon field plate and a manufacture method thereof of the invention have the advantages of saving the photoglith plate of the active region, the photoglith plate of the field limiting ring and the photoglith plate with three layers injected in the active region, on the premise of guaranteeing performance of products, reducing times of photoetching, reducing manufacture cost greatly, which are suitable for manufacturing the power MOS field effect transistor with low cost on a large scale.

The invention discloses a method for manufacturing small-linewidth grooved high-power MOS tube, adopting titanium alloy process to reduce the effect of contact hole injection on device characteristics and the contact resistance, and adopting chemical-mechanical polishing and leveling process to reduce the thermal process of B-P glass deposition and backflow so as to reduce the effect of the transverse diffusion of the contact hole injection on the device characteristics; and adopting W plug process to improve the burying property of a small-size contact hole. The invention can be used to semiconductor manufacturing.

Various embodiments described herein include systems, methods and / or devices used to dissipate heat generated by electronic components in an electronic system (e.g., a memory system that includes closely spaced memory modules). In one aspect, an electronic assembly includes a first circuit board with one or more heat generating components coupled thereto. The electronic assembly further includes a second circuit board with one or more heat sensitive components coupled thereto. The electronic assembly also includes a thermal barrier interconnect. The thermal barrier interconnect electrically couples the first circuit board to the second circuit board. In some embodiments, thermal barrier interconnect is a flexible interconnect with a lower thermal conductivity than the first circuit board and the second circuit board. The thermal barrier interconnect forms a thermal barrier between the first and second circuit boards which protects the heat sensitive components from the heat generating components.

The present invention discloses a probiotics sea buckthorn fruit puree jelly and a preparation method thereof, and belongs to the field of probiotics. A sea buckthorn fruit puree jelly is used as a carrier of probiotics; proteins, polysaccharides and other ingredients in sea buckthorn fruit puree are utilized; and at the same time, a gel substance is combined with thalli of bifidobacteria, lactobacillus, etc. to form the probiotics sea buckthorn fruit puree jelly. The probiotics sea buckthorn fruit puree jelly effectively reduces heat, oxidation and drying damages to the probiotics during a conventional drying process, achieves a purpose of long-term preservation of the probiotics, at the same time plays a role of resisting oxidation damages, effectively prevents vigor loss of bacterial strains during a storage process, also improves the additional nutritional value of the probiotics, and is widely used in food industry.

A semiconductor structure includes a substrate, and first isolation structures, at least one buried word line and at least one second isolation structure which are disposed in the substrate. The buried word line intersects the first isolation structures. The second isolation structure intersects the first isolation structures. A material of at least a portion of the second isolation structure is different from a material of the first isolation structures.

The invention provides a filament current control circuit of hot-cathode fluorescent lamp, which is used for accurately controlling the filament current of hot-cathode fluorescent lamp, comprising a filament heating transformer and a filament current control loop. A primary loop of the filament heating transformer is connected with the filament current control loop, and two ends of secondary loop are respectively connected with two ends of a hot-cathode filament of fluorescent lamp. The driving power supply of the fluorescent lamp is connected to a centre tap of the corresponding secondary loop. The filament current control loop comprises a power switch, a control logic, a multiple-input comparator, an oscillator, a reference voltage source, a reference current source, a primary loop current sampling resistor, a filtering capacitor, a filtering resistor and so on. By using the filament current control circuit of hot-cathode fluorescent lamp in this invention, the influence of the lamp tube on the temperature of filament can be reduced, the filament current can be accurately controlled, the temperature of filament can be stabilized, the service life of fluorescent lamp can be prolonged, and the current balance of shunt-wound fluorescent lamp can be realized without using an extra choke coil.

The invention discloses a manufacturing method of a super junction device. The method comprises the following steps: step 1, forming a gate structure which is a trench gate, filling a gate trench with a polysilicon gate in the formation process of the trench gate, and performing first flattening to enable the surface of a first epitaxial layer with the trench gate to be a flat surface, wherein the width of the gate trench at the leading-out position of the gate structure meets the requirement of forming a contact hole; step 2, forming a cap layer at the top of the trench gate under the condition that the gate oxide layer outside the gate trench is reserved; and step 3, forming a super junction in the first epitaxial layer which is provided with the cap gate and has the flat surface, and carrying out second flattening. According to the method, on the basis of realizing the full-flat process, the external expansion of doped impurities of the polysilicon gate and the damage to the gate oxide layer can be prevented at the same time.

The invention relates to a bidirectional symmetrical TVS diode and a manufacturing method thereof. According to the invention, a low-pressure chemical vapor deposition method is used to reduce a thermal process, transverse bidirectional TVS is realized, the performance is stable, and the bidirectional symmetry is consistent. An etching method including a dry method and a wet method is employed, thereby guaranteeing that the silicon in the window is prevented from being over-etched, guaranteeing the good shape and appearance of a window, facilitating the metal coverage, and improving the reliability of a device; a surface dielectric layer uses TEOS silicon dioxide produced by low-pressure chemical vapor deposition to replace silicon dioxide produced by thermal oxidation, so the thermal process in the process is greatly reduced, the production cost is reduced, and the stability of the device is improved. One end of the TVS is connected to the back surface of the chip through the punch-through region, so the area of the chip is saved.

The invention relates to a sound converter, particularly a sound converter including suspension devices used for connecting the lower end or lower end side surface of a voice coil to a frame so as tosuppress splitting and vibration. The sound converter includes a frame; a bottom plate including an outer bottom plate and an inner bottom plate; a top plate including an outer top plate and an innertop plate; a center magnet mounted between the inner top plate and the inner bottom plate; first to fourth sub-magnets mounted between the outer top plate and the outer bottom plate and spaced apart from the center magnet by a magnetic gap; a first suspension device including a center dome member and an edge dome member mounted at the top part of the frame; a second suspension device including FPCB and attached to the bottom surface of a vibrating diaphragm; a voice coil having a lower end positioned in the magnetic gap and an upper end attached to the bottom surface of the second suspension device; and a third suspension device including first to fourth dampers. The dampers penetrate space among the sub-magnets to connect the lower end of the voice coil to the frame.

Provided are: a rotating drive mechanism which can, without requiring a special drive device and a control device, rotate a large number of rotating shafts while continuously moving the rotating shafts and which is configured so that the rotational speed of the rotating shafts can be arbitrarily changed by a simple configuration; and a film label application device. A rotating drive mechanism is provided with: a movable driven member (103) which has a follower mechanism (105) provided to the tapered section (104) thereof and to which a rotating shaft (112) is connected; and a driving member (101) which is provided along the direction of movement of the driven member (103) and which has a transmission mechanism (102) provided to the sloped section (115) thereof. The transmission mechanism (102) is provided so as to face an arbitrary position of the follower mechanism (105).

A printed circuit board and a manufacturing method thereof are provided to improve quality or performance of a product by minimizing deformation by heat while a part such as a camera module and et cetera is being mounted. A printed circuit board includes an internal layer (100), an external insulation layer and an external core layer. The internal layer is made of a flexible circuit board. The external insulation layer is laminated on more than one layer of one or the other layer. The external core layer is laminated on the external insulation layer and includes a reinforcement layer made of a rigid material of which strength is greater than the internal layer and external layer. The second external core layer includes a second reinforcement layer and a second external circuit layer. The first reinforcement layer and the second reinforcement layer are made of at least one material among FR-4, HI-tg or BT.

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

A solid state relay is disclosed. The solid state relay includes an N-type MOSFET transistor, the drain of the N-type MOSFET transistor is connected with the positive electrode of the automobile battery, the source of the N-type MOSFET transistor is connected to the load input terminal, the gate of the N-type MOSFET transistor is connected to a booster circuit, the drain of the N-type MOSFET transistor is also connected with a voltage drop acquisition circuit of the N-type MOSFET transistor. The solid state relay also includes a switching logic control circuit, the input terminal A and the input terminal B of the solid-state relay are connected with a switch logic control circuit, the function of the switching logic control circuit is to convert a positive or negative control level of an external input connecting the input terminal A and the input terminal B to the solid-state relay to a control level of the N-type MOSFET transistor, one output terminal of the switching logic control circuit is connected with the booster circuit, and the other output terminal of the switching logic control circuit is connected with an N-type MOSFET transistor voltage drop acquisition circuit.