477results about How to "Reduce line width" patented technology

A method for forming an active pillar of a vertical channel transistor includes forming a hard mask pattern on a substrate, etching vertically the substrate using the hard mask pattern as an etch barrier to form an active pillar, and etching horizontally to remove by-product remaining on the exposed substrate, the hard mask pattern and the active pillar and at the same time to reduce line width of the hard mask pattern and the active pillar, wherein a unit cycle in which the vertical etching and the horizontal etching are each performed subsequently once, respectively, is performed repeatedly at least two times or more. According to the present invention, an active pillar having vertical profiles on its sidewalls and having height and line width (or diameter) required in a highly integrated vertical channel transistor can be provided.

A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills the trench, forming a hard mask layer over the silicon substrate, the hard mask layer comprising a stack of an oxide layer and an amorphous carbon layer, wherein the hard mask layer exposes a channel target region of the active region, and forming a recess region with a dual profile by first etching and second etching the channel target region using the hard mask layer as an etch barrier, wherein the second etching is performed after removing the amorphous carbon layer.

An electroconductive sheet and a touch panel having a first electroconductive section and a second electroconductive section, the second electroconductive section being disposed on the display-panel side. The first electroconductive section has a plurality of first electroconductive patterns arranged in the x-direction, a plurality of first large grids being respectively connected to the first electroconductive patterns. The second electroconductive section has a plurality of second electroconductive patterns arranged in the y-direction, a plurality of second large grids being respectively connected to the second electroconductive patterns. The area occupied by thin metal wires in the second electroconductive patterns is larger than the area occupied by thin metal wires in the first electroconductive patterns. The area occupied by thin metal wires in the second large grids is larger than the area occupied by thin metal wires in the first large grids.

A touch panel including at least a first sensing string and at least a second sensing string is provided. The first sensing string arranged in a first direction includes first sensing pads electrically connecting with each other and at least a first connecting pattern. The first connecting patterns are located between two adjacent first sensing pads. The second sensing string does not contact the first sensing string and is arranged in a second direction which crosses with the first direction. The second sensing string includes second sensing pads and at least a second connecting pattern. The second sensing pads electrically connected with one another are located among the first sensing pads. The second connecting pattern is located between two adjacent second sensing pads. Resistivities of the first connecting pattern and the second connecting pattern are lower than those of the first sensing pad and the second sensing pad respectively.

An In-Plane Switching (IPS) mode LCD device is disclosed, to prevent the distortion of transverse electric field in a method of decreasing a line width of a common electrode overlapped with a pixel electrode, which includes intersecting gate and data lines that define a pixel region; thin film transistors at an intersection point of the gate and data lines; pixel electrodes formed in the pixel region and connected with a thin film transistor; and common electrodes arranged between the pixel electrodes of the pixel region; wherein, the outermost common electrode, formed adjacent to the data line, is partially overlapped with the pixel electrode, and the line width of the predetermined portion of the outermost common electrode overlapped with the pixel electrode is smaller than the remaining portions of the outermost common electrode.

In a semiconductor integrated circuit device including a third gate, the present invention improves miniaturization and operation speed and reduces a defect density of an insulator film. In a semiconductor integrated circuit device including a well of a first conductivity type formed in a semiconductor substrate, a source/drain diffusion layer of a second conductivity type inside the well, a floating gate formed over the semiconductor substrate through an insulator film, a control gate formed and isolated from the floating gate through an insulator film, word lines formed by connecting the control gates and a third gate formed and isolated from the semiconductor substrate, the floating gate and the control gate through an insulator film and different from the floating gate and the control gate, the third gate is buried into a space of the floating gates existing in a direction vertical to the word line and a channel.

A semiconductor laser linear array of the iffraction grating array exocoele and its preparation method is provided, which belongs to the field of semiconductor laser and comprises a semiconductor laser linear array, a fastaxis collimation lens, a slow lens, a half wave plate, a high-aperture lens and an iffraction grating array. The said semiconductor laser linear array is characterized in making exocoele feedback through the iffraction grating array to make one or more luminescent units of the semiconductor laser linear array incident onto the corresponding iffraction grating unit. By adjusting each of the iffraction grating units, the central wavelength of the luminescent unit in different degrees of crook through the iffraction grating unit and the feedback light retraced back are equal or closely similar with each other, thus the whole spectral line width is reduced. The invention has the advantages of using a plurality of small-area gratings, low cost, easy processing, simple light path adjustment and high output power.

The invention relates to the field of liquid crystal display and particularly relates to an array base plate, a manufacturing method thereof and a liquid crystal display device which are used for solving the problems of large grid electrode size and increased feed-in voltage value in the prior art. The array base plate provided by the embodiment of the invention comprises a thin film transistor arranged on a substrate base plate, a grid line connected with the thin film transistor and a shielding layer positioned between the substrate base layer and an active layer of the thin film transistor; the shielding layer is used for shielding light rays injected into the active layer; and the line width of a grid electrode is less than that of the grid line in which the grid electrode is positioned. According to the embodiment of the invention, the shielding layer shields the light rays injected into the active layer, and the line width of the grid electrode is less than that of the grid line in which the grid electrode is positioned, so that the value of the interelectrode capacitance of a TFT (Thin Film Transistor) is reduced, and further feed-in voltages influencing the frame level of a TFT-LCD (Liquid Crystal Display) can be reduced.

To provide a semiconductor device capable of reducing the line width of a fuse.

In the semiconductor device, a dummy fuse is provided adjacent to a fuse, each wiring width of the fuse and the dummy fuse is set to the minimum line width, and the interval between the fuse and the dummy fuse is set to the minimum interval. Consequently, the exposure condition of the fuse and the dummy fuse is optimized by OPC, and therefore, it is possible to form the fuse with the minimum line width.

The invention provides a liquid crystal display driving system and a driving method thereof, the method comprises: supplying a special voltage to an auxiliary shade storage capacitor electrode plate on a liquid crystal display panel having an upper substrate, a lower substrate, and a liquid crystal layer; applying a common electrode voltage on a common electrode, and applying a special voltage to a storage capacitor so that a predetermined voltage difference is formed between the voltages of the auxiliary shade storage capacitor electrode plate and the common electrode, thereby improving side light-leakage of the liquid crystal display, increasing manufacturing ability when the upper substrate and the lower substrate are assembled, and reducing a line width of an upper substrate black matrix shade sheet to increase an opening degree.

The invention discloses a high-speed WDM (Wavelength Division Multiplexing) light communication system and a method for resisting non-linearity effect in the same. The method comprises the following steps of: (A10) respectively dividing linearly polarized light into polarized light in a first polarization direction and polarized light in a second polarization direction, wherein the two paths of polarized light have orthogonal polarization states; (A20) coding and modulating digital signals by adopting polarization interleaved codes, i.e. respectively modulating code 1 of the same group of the digital signals to the polarized light in the first polarization direction and the polarized light in the second polarization direction; (A30) merging the polarized light in the first polarization direction and the polarized light in the second polarization direction into a transmission light wave, multiplexing by a wavelength division multiplexer at a transmitting terminal and outputting to an optical fiber link; and (A40) dividing the transmission light wave by a wavelength division demultiplexer at a receiving terminal and respectively outputting to a light-strength detecting light receiver. The invention damages the forming conditions of iFWM (intra-channel Four-Wave Mixing) by utilizing the polarization characteristics of the light wave. Compared with the traditional method, the invention lowers the requirements for the linear width of a laser and the performance of a modulator so that the actual iFWM-resisting effect is better.