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167results about How to "Exact width" patented technology

Late reverberation-based synthesis of auditory scenes

A scheme for stereo and multi-channel synthesis of inter-channel correlation (ICC) (normalized cross-correlation) cues for parametric stereo and multi-channel coding. The scheme synthesizes ICC cues such that they approximate those of the original. For that purpose, diffuse audio channels are generated and mixed with the transmitted combined (e.g., sum) signal(s). The diffuse audio channels are preferably generated using relatively long filters with exponentially decaying Gaussian impulse responses. Such impulse responses generate diffuse sound similar to late reverberation. An alternative implementation for reduced computational complexity is proposed, where inter-channel level difference (ICLD), inter-channel time difference (ICTD), and ICC synthesis are all carried out in the domain of a single short-time Fourier transform (STFT), including the filtering for diffuse sound generation.
Owner:AVAGO TECH INT SALES PTE LTD

Coherence-based audio coding and synthesis

An auditory scene is synthesized from a mono audio signal by modifying, for each critical band, an auditory scene parameter (e.g., an inter-aural level difference (ILD) and / or an inter-aural time difference (ITD)) for each sub-band within the critical band, where the modification is based on an average estimated coherence for the critical band. The coherence-based modification produces auditory scenes having objects whose widths more accurately match the widths of the objects in the original input auditory scene.
Owner:AVAGO TECH INT SALES PTE LTD

Late reverberation-based synthesis of auditory scenes

A scheme for stereo and multi-channel synthesis of inter-channel correlation (ICC) (normalized cross-correlation) cues for parametric stereo and multi-channel coding. The scheme synthesizes ICC cues such that they approximate those of the original. For that purpose, diffuse audio channels are generated and mixed with the transmitted combined (e.g., sum) signal(s). The diffuse audio channels are preferably generated using relatively long filters with exponentially decaying Gaussian impulse responses. Such impulse responses generate diffuse sound similar to late reverberation. An alternative implementation for reduced computational complexity is proposed, where inter-channel level difference (ICLD), inter-channel time difference (ICTD), and ICC synthesis are all carried out in the domain of a single short-time Fourier transform (STFT), including the filtering for diffuse sound generation.
Owner:AVAGO TECH INT SALES PTE LTD

Custom fit system with adjustable last and method for custom fitting athletic shoes

A system for custom fitting athletic shoes to an individual wearer includes a foot measurement device, an adjustable footform and an infrared activation chamber. Shoes of a single width for each length size have at least a portion of the upper made of heat malleable material to be custom fitted for width. Foot measurement data is used to calculate length size, width size and a number of custom adjustment factors. After the length size is calculated, the appropriately sized shoe and last are assembled together and subject to infrared radiation until the heat malleable material becomes plastic. Adjustments are then made to the last in accordance with the adjustment factors to provide custom width sizing. After further heat treatment to set the shoe upper and cooling, the shoe is complete. In this manner, if used in a retail setting, shoes are custom fitted to the wearer in a matter of minutes.
Owner:NIKE INC

Processes for Making Reliable VCSEL Devices and VCSEL arrays

A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing / warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.
Owner:PRINCETON OPTRONICS

Touch panel

A touch panel including at least a first sensing string and at least a second sensing string is provided. The first sensing string arranged in a first direction includes first sensing pads electrically connecting with each other and at least a first connecting pattern. The first connecting patterns are located between two adjacent first sensing pads. The second sensing string does not contact the first sensing string and is arranged in a second direction which crosses with the first direction. The second sensing string includes second sensing pads and at least a second connecting pattern. The second sensing pads electrically connected with one another are located among the first sensing pads. The second connecting pattern is located between two adjacent second sensing pads. Resistivities of the first connecting pattern and the second connecting pattern are lower than those of the first sensing pad and the second sensing pad respectively.
Owner:WINTEK CORP

Measuring device and method of road mark

The invention provides measuring device and method of a road mark. The measuring device comprises a video camera, distance meter sensors and a computer, wherein the video camera is arranged behind a windshield of a vehicle and is connected with the computer; a front wheel and a rear wheel of the vehicle are respectively provided with the distance meter sensors; and the distance meter sensors are connected with the computer. The measuring method comprises the following steps of: (1) respectively collecting the height information of a chassis on the front wheel and the rear wheel by the two distance meter sensors; (2) acquiring a road ahead image by the video camera; and (3) transmitting the collected height information of the chassis and the information of the road ahead image to the computer, wherein the computer outputs the width of a lane ahead of vehicle running through operation. The invention can accurately obtain the width of the lane without being influenced by factors, i.e. vehicle shaking and the like, and has simpler principle and operation.
Owner:WUHAN UNIV OF TECH

Pixel clock creation method, pixel clock creation device, optical scanning device, and image forming apparatus

In a pixel clock creation method and device, a high frequency clock is created. A scanning time needed to scan a predetermined scanning length is detected in accuracy of half a period of the high frequency clock to output a detection value indicating the detected scanning time. The detection value and a predetermined target value are compared to output a comparison result. A phase data is created based on the comparison result. A pixel clock whose phase is controlled based on both the high frequency clock and the phase data is created.
Owner:RICOH KK

Image recording device and an image recording system

A multi-beam image recording device is capable of recording high-quality high-resolution images without positional errors by exposing test patterns for measuring positional errors of beam spots of each laser beam in main and subsidiary scanning directions, calculating the positional errors of beam spots using a correcting device, controlling the quantity of exposure according to the result of calculation, and thus correcting the positional errors in main and subsidiary scanning directions.
Owner:RICOH PRINTING SYST

Light emitting element, method for manufacturing light emitting element, light emitting element assembly, and method for manufacturing light emitting element assembly

A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.
Owner:SONY CORP

Drawer

A drawer configured to be extended from and retracted into a furniture body. The drawer includes a bottom part; a front panel; two lateral frames; and a back wall connected via a corner joint to an end region formed with one of the lateral frames. Each corner joint including a first connecting part and a second connecting part pivotably connected to the first connecting part. The second connecting part includes detent means for connecting the second connecting part to either the first connecting part or the back wall. The first connecting part is connected to an adapter associated with the end region formed by the back wall with one of the lateral frames.
Owner:PAUL HETTICH

Vehicle measuring apparatus and method for toll collection system

Vehicle measuring apparatus and method are disclosed to accurately measure height and width of a vehicle moving at a high speed. The vehicle measuring apparatus includes: a plurality of laser sensors separated from the road surface with a predetermined height and installed closely to each other corresponding to width of every roadway on the road, and receiving a reflection light of a laser light emitted onto the road from the plurality of the laser sensors and outputting a vehicle measurement signal; and a processor means electrically connected to the laser sensors and calculating height and width of the vehicle on the basis of the signal to measure the vehicle and previously stored installation information of the plurality of laser sensors.
Owner:JIN WOO IND

Method of fabricating a photomask

A method of fabricating a photomask automatically generates a microscopic supplementary pattern by selective sizing to reduce a product cost and by which a precise line width is provided in a manner of decreasing unnecessary microscopic supplementary patterns to raise precision of a photomask pattern. The method includes the steps of selectively carrying out a sizing on a main pattern to form a microscopic supplementary pattern with a difference of the corresponding sizing and selectively removing the microscopic supplementary pattern.
Owner:DONGBU ELECTRONICS CO LTD

Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby

Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured thereby. The method comprises the steps of: (a) forming a hard mask pattern on a substrate comprising a silicon thin film; (b) anisotropically etching the silicon thin film to a predetermined thickness using the hard mask pattern as a mask so as not only to form silicon fins where a channel is to be formed and a silicon pattern where a source / drain region is to be formed, but also to form a silicon body that connects the silicon fins to each other to form a channel; (c) partially etching the silicon thin film using an active mask so as to isolate the source / drain region and the device from each other; and (d) growing a gate dielectric film around the silicon channel and sequentially depositing a gate material and a gate mask on the resulting structure, followed by forming a gate region.
Owner:KOREA ADVANCED INST OF SCI & TECH

Method of fabricating gate of fin type transistor

A method of fabricating a gate of a fin type transistor includes forming hard masks to define active regions of a substrate. A shallow trench isolation method is performed to form a first device separation layer, and then an etch-back process is performed such that the active regions protrude. Sidewall protection layers are formed on sidewalls of the active region, and a second device separation layer is formed thereon, thereby obtaining a device isolation region. The sidewall protection layers include an insulation material with an etch selectivity with respect to an insulation material composing the device isolation region. The device isolation region is selectively etched to form recesses for a fin type active region. Dry etching and wet etching are performed on the silicon nitride to remove the hard masks and the sidewall protection layers, respectively. Gates are formed to fill the recesses.
Owner:SAMSUNG ELECTRONICS CO LTD

Fuel injection method

A fuel injection method is provided for correcting the fuel injection amount accurately by eliminating offset components when detecting a current flowing through a solenoid for fuel injection. A current component, which is detected during normal running and a drive current flowing through the solenoid for fuel injection is OFF (Step 11), is input to an A / D converter that stores the value thereof (Step 12). Thereafter, the drive current is turned ON (Step S13), elapse of a fixed time period is waited (Step S14), and an input voltage of the A / D converter is detected (Step S15). A difference current (offset component) is calculated by subtracting the offset voltage from the input voltage (Step S16), and a current span is adjusted based on a span correction factor (Step S17). Thereafter, a pulse width current correction factor is calculated (Step S2a) and, based on the pulse width current correction factor, a drive pulse width is calculated (Step S2b) and provided to the solenoid.
Owner:MIKUNI CORP

Lighting apparatus for illumination light source

In a lighting apparatus for an illumination light source (discharge lamp or the like), a fly-back type DC-DC converter circuit comprises a transformer and a switching element. A control circuit is provided for controlling power supplied to the illumination light source, such that operation is controlled in a current boundary mode by a control signal sent from the control circuit to the switching element. A fluctuation generator circuit is provided for giving fluctuations to a frequency at which the switching element is driven by changing the power supplied to the illumination light source with reference to a target power value associated with the power control for the illumination light source.
Owner:KOITO MFG CO LTD

DC offset cancellation circuit, differential amplification circuit with DC offset cancellation circuit, photo-electric pulse conversion circuit, pulse shaping circuit, and pulse generation circuit

A DC offset cancellation circuit that is capable of canceling a DC offset voltage occurring between a pair of differential output signals of a differential amplification circuit, while preventing a signal waveform from being distorted due to accumulation of AC components and a photo-electric pulse conversion circuit that is capable of generating an electrical pulse signal that accurately reproduces a rise timing and a fall timing of an optical pulse signal by canceling the DC offset voltage are provided. A photo-electric pulse conversion circuit is provided with a photodiode, an I-V conversion circuit, a first differential amplification circuit having a DC offset cancellation circuit, a second differential amplification circuit, a reference voltage generation circuit, and a comparison circuit. The DC offset cancellation circuit uses a changeover circuit to change a state of a low-pass filter with a hold function in synchronization with an inversion electrical pulse signal, and performs a negative feedback of a filtered signal which is generated by subjecting third differential signals to low-pass filtration or a hold filtered signal which is a filtered signal held during changeover.
Owner:FUJITSU MICROELECTRONICS LTD

Information recording method, information recording apparatus and information recording medium

An information recording method capable of properly forming a width of a central portion of a recording mark, an information recording apparatus and an information recording medium are provided. The present invention includes the steps of generating a pulse train including a first pulse and a second pulse and forming at least one of a recording mark and a space onto an information recording medium by irradiating the pulse train onto the information recording medium while rotating the information recording medium at a certain linear velocity. The first pulse is a pulse for forming a central portion of the recording mark, among the recording mark and the space. The second pulse is a pulse for forming a portion other than the central portion of the recording mark, among the recording mark and the space. The step of generating the pulse train includes a step of determining a power level of the first pulse in accordance with the linear velocity and a power level of the second pulse.
Owner:PANASONIC CORP

Semiconductor structure and forming method thereof

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the steps that a semiconductor substrate is provided; a mask layer and a sacrificial material layer located on the surface of the mask layer are sequentially formed on the surface of the semiconductor substrate; the sacrificial material layer is etched to form a plurality of discrete sacrificial layers; side walls are formed on the side wall surfaces of the sacrificial layers; the sacrificial layers are removed; and supplement side walls are formed on the side wall surfaces of the side walls. By the method, improvement of the performance of the formed semiconductor structure is facilitated.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Laser modulating and driving device and image reproducing apparatus using the same

A laser modulating and driving device comprises a modulation signal generating unit configured to generate a laser modulation signal consisting of a pair of small swing differential signals based on pixel data, and a driving unit configured to drive a laser according to the laser modulation signal supplied from the modulation signal generating unit.
Owner:RICOH KK

DC offset cancellation circuit, differential amplification circuit with DC offset cancellation circuit, photo-electric pulse conversion circuit, pulse shaping circuit, and pulse generation circuit

A DC offset cancellation circuit that is capable of canceling a DC offset voltage occurring between a pair of differential output signals of a differential amplification circuit, while preventing a signal waveform from being distorted due to accumulation of AC components and a photo-electric pulse conversion circuit that is capable of generating an electrical pulse signal that accurately reproduces a rise timing and a fall timing of an optical pulse signal by canceling the DC offset voltage are provided. A photo-electric pulse conversion circuit is provided with a photodiode, an I-V conversion circuit, a first differential amplification circuit having a DC offset cancellation circuit, a second differential amplification circuit, a reference voltage generation circuit, and a comparison circuit. The DC offset cancellation circuit uses a changeover circuit to change a state of a low-pass filter with a hold function in synchronization with an inversion electrical pulse signal, and performs a negative feedback of a filtered signal which is generated by subjecting third differential signals to low-pass filtration or a hold filtered signal which is a filtered signal held during changeover.
Owner:FUJITSU MICROELECTRONICS LTD

Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby

Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured thereby. The method comprises the steps of: (a) forming a hard mask pattern on a substrate comprising a silicon thin film; (b) anisotropically etching the silicon thin film to a predetermined thickness using the hard mask pattern as a mask so as not only to form silicon fins where a channel is to be formed and a silicon pattern where a source / drain region is to be formed, but also to form a silicon body that connects the silicon fins to each other to form a channel; (c) partially etching the silicon thin film using an active mask so as to isolate the source / drain region and the device from each other; and (d) growing a gate dielectric film around the silicon channel and sequentially depositing a gate material and a gate mask on the resulting structure, followed by forming a gate region.
Owner:KOREA ADVANCED INST OF SCI & TECH

Electrical connector

An electrical connector for connecting a flat conductive member includes a housing made of an electrical insulating material and including a terminal holding groove, and a terminal held in the terminal holding groove for contacting with the flat conductive member. The terminal holding groove includes a first groove portion and a second groove portion. The groove portion has a first groove width, and the second groove portion has a second groove width smaller than the first groove width. The terminal includes an upper arm portion, a lower arm portion extending in parallel with the upper arm portion, and a combining portion combining the upper arm portion and the lower arm portion. The lower arm portion includes a connecting portion accommodated in the first groove portion and to be soldered to a circuit board. The upper arm portion includes a pressing portion for pressing the flat conductive member.
Owner:HIROSE ELECTRIC GROUP

Processes for making reliable VCSEL devices and VCSEL arrays

A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing / warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.
Owner:PRINCETON OPTRONICS
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