Diffraction grid array external cavity semiconductor laser linear array and method of producing the same
A diffraction grating and semiconductor technology, applied in semiconductor lasers, semiconductor laser devices, lasers, etc., can solve the problems of complex optical path adjustment, low output power, and difficult adjustment, and achieve the effects of simple optical path adjustment, high output power, and easy processing.
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[0020] The specific parameters of the embodiment are as follows: the length of the semiconductor laser line array 1 is 5mm, the center wavelength is 808nm, and there are 5 light-emitting units. After the light emitted is collimated by the fast-axis collimator mirror 2, the fast-axis direction (y direction) is approximately parallel Light. The fast axis collimating mirror 2 is a microcylindrical lens. The focal length of the small lens 3 is f 1 =20mm, caliber D 1 = 10mm, large lens 5 focal length f 2 =100mm, caliber D 1 =40mm, the distance between the small lens 3 and the fast axis collimating mirror 2 is 20mm, the small lens 3 and the large lens 5 are confocally placed to form an inverted telescopic system, which is used to compress the slow axis (x direction) divergence angle, due to the inverted telescopic The system magnification is 5, so the divergence angle of the slow axis is compressed by 5 times. The distance between the diffraction grating array 6 and the large l...
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