The invention discloses an electrostatic protection circuit in an integrated circuit. The electrostatic protection circuit in the integrated circuit of the present invention includes a multi-finger parallel GGNMOS circuit, the drain of the GGNMOS is connected to the previous stage of the internal circuit, and a diode, wherein the most middle GGNMOS source and the substrate are connected to the cathode of the diode , the gate is grounded, the other GGNMOS sources in the multi-finger parallel GGNMOS circuit are grounded, the substrate is grounded, the gates are connected to each other and to the cathodes of the diodes, and the anodes of the diodes are grounded. When ESD occurs, the middlemost The GGNMOS is first turned on, and a bias voltage is generated on the diode to supply gate bias voltages to all GGNMOS gates in other surroundings, so that all GGNMOSs in the protection circuit are turned on evenly. The invention is applicable to the manufacture of integrated circuits.