59results about How to "Limited resistance" patented technology

A strip dispenser has a strip magazine, a magazine spring, a strip vial component, and a cover. The strip magazine has a magazine open end and an outer magazine casing surrounding the strip magazine adjacent the open end for a predefined distance along the strip magazine where the magazine has a magazine volume with an open magazine top. The magazine spring is contained within the strip magazine. The strip vial component has a magazine receiving end, a closed end and a vial recess for slidably receiving the strip magazine between a first position and a second position where the vial recess has a shoulder portion spaced from the closed end and adjacent to and aligned with the open magazine top. The cover encloses the magazine open end and has a slit spaced a predefined distance from an edge of the cover where the slit is in communication with the magazine volume and the open magazine top and in spatial alignment with the shoulder portion.

A child safety seat including a seat bottom and seat back first and second resilient side elements carried on laterally-opposed sides of the seat back, and including walls defining an enclosed chamber. The walls have sufficient rigidity to maintain a nominal shape and are deformable in response to a predetermined minimum impact.

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.

As the static magnetic field used in Magnetic Resonance Imaging (“MRI”) instruments increases the resonance frequency also increases. Consequently, the signal lost due to the coil becomes an issue. To compensate for this loss, it is possible to use an active device, such as a diode, a transistor, etc., with the radio frequency coil, MRI arrangement and method according to exemplary embodiments of the present invention to generate negative resistance to cancel the coil loss resistance. In this manner, the efficiency of the RF coil at high frequency can be improved.

A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.

A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.